High Voltage assemblies to benefit from these low capacitance rectifiers offering temperature-independent zero reverse recovery currents in isolated packages
Thief River Falls/Dulles, 弗吉尼亚。, 可能 28, 2013 — GeneSiC半导体, 各种碳化硅的先驱和全球供应商 (碳化硅) power semiconductors announce the immediate availability of 3300 V/0.3 Ampere SiC Schottky Rectifiers – the GAP3SLT33-220FP. This unique product represents the highest voltage SiC rectifier on the market, and is specifically targeted towards voltage multiplier circuits and high voltage assemblies used in a wide range of X-Ray, 激光和粒子发生器电源.
Contemporary voltage multiplier circuits suffer from low circuit efficiencies and large sizes because the reverse recovery currents from Silicon rectifiers discharge the parallel connected capacitors. 在较高的整流器结温下, 这种情况变得更糟，因为硅整流器的反向恢复电流随着温度的增加而增加. 具有热约束的高压组件, 即使通过适度的电流，结温也很容易升高. High Voltage SiC rectifiers offer unique characteristics that promises to revolutionize the high voltage assemblies. GeneSiC 3300 V/0.3 A 肖特基整流器具有不随温度变化的零反向恢复电流. This relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high voltage generator circuits, 通过使用更高的交流输入电压. 近乎理想的开关特性允许消除/显着减少电压平衡网络和缓冲电路. The TO-220 Full Pack overmolded isolated package features industry-standard form factor with increased pin spacing in through hole assemblies.
“This product offering comes from years of sustained efforts at GeneSiC. We believe the 3300 V rating is a key differentiator for the high voltage generator market, 并将为我们的客户带来巨大的利益. GeneSiC 的低 VF, low capacitance SiC Schottky Rectifiers enables this breakthrough product” 博士说. 兰比尔·辛格, GeneSiC半导体总裁.
3300 V/0.3 A SiC Rectifier Technical Highlights
- 通态下降 1.7 电压 0.3 一种
- VF 上的正温度系数
- 吨最大 = 175○C
- Capacitive charge 52 数控 (典型的).
所有设备都是 100% 经过全电压/电流额定值测试并采用无卤素封装, RoHS compliant industry-standard TO-220FP (Full Pack) 包. The devices are immediately available from GeneSiC’s Authorized Distributor, Digikey.
关于 GeneSiC 半导体公司.
GeneSiC半导体公司. 是高温领域的领先创新者, 高功率超高压碳化硅 (碳化硅) 设备, 和广泛的功率半导体的全球供应商. 其器件组合包括基于 SiC 的整流器, 晶体管, 和晶闸管产品, 以及硅整流产品. GeneSiC 开发了广泛的知识产权和技术知识，涵盖了 SiC 功率器件的最新进展, 面向替代能源的产品, 汽车, 下石油钻井, 电机控制, 电源, 运输, 和不间断电源应用. GeneSiC获得美国政府机构多项研发合同, 包括 ARPA-E, 能源部, 海军, 军队, DARPA, 国防情报局, 和国土安全部, 以及主要政府主承包商. 在 2011, 公司荣获久负盛名的R&超高压 SiC 晶闸管商业化 D100 奖.
了解更多信息, please visit www.genesicsemi.com
