High Voltage circuits and assemblies to benefit from SiC chips that offer unprecedented voltage ratings and ultra-high speed switching
杜勒斯, 弗吉尼亚。, 十一月 7, 2013 — GeneSiC半导体, 各种碳化硅的先驱和全球供应商 (碳化硅) power semiconductors announce the immediate availability of 8000 V SiC PiN Rectifiers; 8000 V SiC Schottky Rectifiers, 3300 V SiC Schottky Rectifiers and 6500 V SiC Thyristors in bare die format. These unique products represents the highest voltage SiC devices on the market, and is specifically targeted towards oil and gas instrumentation, voltage multiplier circuits and high voltage assemblies.
Contemporary ultra-high voltage circuits suffer from low circuit efficiencies and large sizes because the reverse recovery currents from Silicon rectifiers discharge the parallel connected capacitors. 在较高的整流器结温下, this situation worsens further since the reverse recovery current in Silicon rectifiers increases with temperature. 具有热约束的高压组件, 即使通过适度的电流，结温也很容易升高. High Voltage SiC rectifiers offer unique characteristics that promises to revolutionize the high voltage assemblies. GeneSiC 8000 V 和 3300 V Schottky rectifiers feature zero reverse recovery current that does not change with temperature. This relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high voltage generator circuits, 通过使用更高的交流输入电压. 近乎理想的开关特性允许消除/显着减少电压平衡网络和缓冲电路. 8000 V PiN Rectifiers offer higher current levels and higher operating temperatures. 6500 V SiC Thyristor chips are also available to accelerate R&D of new systems.
“These products showcase GeneSiC’s strong lead in the development of SiC chips in the multi-kV ratings. We believe the 8000 V rating goes beyond what Silicon devices can offer at rated temperatures, 并将为我们的客户带来巨大的利益. GeneSiC 的低 VF, low capacitance SiC Rectifiers and Thyristors will enable system level benefits not possible before” 博士说. 兰比尔·辛格, GeneSiC半导体总裁.
8000 V/2 A SiC Bare Die PiN Rectifier Technical Highlights
- 吨最大 = 210○C
- Reverse Leakage Currents < 50 uA at 175○C
- Reverse Recovery Charge 558 数控 (典型的).
8000 V/50 mA SiC Bare Die Schottky Rectifier Technical Highlights
- Total Capacitance 25 pF (典型的, at -1 V, 25○C).
- VF 上的正温度系数
- 吨最大 = 175○C
6500 V SiC Thyristor Bare Die Technical Highlights
- Three offerings – 80 Amperes (GA080TH65-CAU); 60 Amperes (GA060TH65-CAU); 和 40 Amperes (GA040TH65-CAU)
- 吨最大 = 200○C
3300 V/0.3 A SiC Bare Die Rectifier Technical Highlights
- 通态下降 1.7 电压 0.3 一种
- VF 上的正温度系数
- 吨最大 = 175○C
- Capacitive charge 52 数控 (典型的).
关于 GeneSiC 半导体公司.
GeneSiC半导体公司. 是高温领域的领先创新者, 高功率超高压碳化硅 (碳化硅) 设备, 和广泛的功率半导体的全球供应商. 其器件组合包括基于 SiC 的整流器, 晶体管, 和晶闸管产品, 以及硅整流产品. GeneSiC 开发了广泛的知识产权和技术知识，涵盖了 SiC 功率器件的最新进展, 面向替代能源的产品, 汽车, 下石油钻井, 电机控制, 电源, 运输, 和不间断电源应用. GeneSiC获得美国政府机构多项研发合同, 包括 ARPA-E, 能源部, 海军, 军队, DARPA, 国防情报局, 和国土安全部, 以及主要政府主承包商. 在 2011, 公司荣获久负盛名的R&超高压 SiC 晶闸管商业化 D100 奖.
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