GeneSiC wins $2.53M from ARPA-E towards development of Silicon Carbide Thyristor-based devices

ダレス, VA, September 28, 2010 – Advanced Research Projects Agency – Energy (ARPA-E) has entered into a Cooperative Agreement with the GeneSiC Semiconductor-led team towards the development of the novel ultra high-voltage silicon carbide (SiC) Thyristor based devices. These devices are expected to be key enablers for integrating large-scale wind and solar power plants into the next-generation Smart Grid.

“This highly competitive award to GeneSiC will allow us to extend our technical leadership position in the multi-kV Silicon Carbide technology, as well as our commitment to grid-scale alternative energy solutions with solid state solutions,” commented Dr. ランビール・シン, GeneSiC 社長. “Multi-kV SiC Thyristors we’re developing are the key enabling technology towards the realization of Flexible AC Transmission Systems (事実) elements and High Voltage DC (HVDC) architectures envisaged towards an integrated, efficient, Smart Grid of the future. GeneSiC’s SiC-based Thyristors offer 10X higher voltage, 100X faster switching frequencies and higher temperature operation in FACTS and HVDC power processing solutions as compared to conventional Silicon-based Thyristors.”

In April 2010, GeneSiC responded to the Agile Delivery of Electrical Power Technology (ADEPT) solicitation from ARPA-E that sought to invest in materials for fundamental advances in high voltage switches that has the potential to leapfrog existing power converter performance while offering reductions in cost. The company’s proposal titled “Silicon Carbide Anode Switched Thyristor for medium voltage power conversion” was selected to provide a lightweight, solid-state, medium voltage energy conversion for high power applications such as solid-state electrical substations and wind turbine generators. これらの高度なパワー半導体技術を展開することで、 25-30 電力供給効率の向上による電力消費のパーセント削減. Innovations selected were to support and promote U.S. businesses through technological leadership, through a highly competitive process.

Silicon carbide is a next-generation semiconductor material with vastly superior properties to conventional silicon, such as the ability to handle ten times the voltage—and one-hundred times the current—at temperatures as high as 300ºC. These characteristics make it ideally suited to high-power applications such as hybrid and electric vehicles, renewable energy (wind and solar) installations, and electrical-grid control systems.

現在、超高電圧が確立されています。 (>10キロボルト) 炭化ケイ素 (SiC) デバイス技術は、次世代のユーティリティ グリッドで革新的な役割を果たす. サイリスタベースの SiC デバイスは、最高のオン状態性能を提供します。 >5 kV デバイス, フォルト電流リミッタのような中電圧電力変換回路に広く適用できます。, AC-DCコンバーター, Static VAR Compensators and Series Compensators. また、SiC ベースのサイリスタは、従来の電力グリッド要素との類似性により、早期採用の可能性が最も高くなります. Other promising applications and advantages for these devices include:

  • Power-management and power-conditioning systems for Medium Voltage DC conversion sought under Future Naval Capability (FNC) of US Navy, Electro-magnetic launch systems, high energy weapon systems and medical imaging. The 10-100X higher operating frequency capability allows unprecedented improvements in size, weight, volume and ultimately, cost of such systems.
  • A variety of energy storage, 高温・高エネルギー物理への応用. Energy storage and power grid applications are receiving increasing attention as the world focuses on more efficient and cost-effective energy-management solutions.

GeneSiCは、SiCパワーデバイスの分野で急成長しているイノベーターであり、炭化ケイ素の開発に強いコミットメントを持っています。 (SiC) のベースのデバイス: (A) 電力網用のHV-HFSiCデバイス, パルスパワーと指向性エネルギー兵器; そして (b) 航空機のアクチュエーターおよび石油探査用の高温SiCパワーデバイス.

We’ve emerged as a leader in ultra-high voltage SiC technology by leveraging our core competency in device and process design with an extensive suite of fabrication, characterization, and test facilities,” concludes Dr. シン. “GeneSiC’s position has now been effectively validated by the US DOE with this significant follow-on award.”

GeneSiC半導体について

Strategically located near Washington, ダレスの DC, バージニア, GeneSiC Semiconductor Inc. は、高温における主要なイノベーターです。, ハイパワー・超高圧シリコンカーバイド (SiC) デバイス. 現在の開発プロジェクトには、高温整流器が含まれます, スーパージャンクショントランジスタ (SJT) およびさまざまなサイリスタ ベースのデバイス. GeneSiC は、主要な米国政府機関からプライム/サブ契約を結んでいる、または結んでいる, エネルギー省を含む, 海軍, 軍, DARPA, 国土安全保障省. 同社は現在、大幅な成長を遂げている, パワーデバイスと検出器の設計に有資格者を雇用する, 製作, とテスト. 詳細を確認するには, 来てください www.genesicsemi.com.