دالاس, Va., Feb. 25, 2013 /PRNewswire-iReach/ — جينيسيك أشباه الموصلات, مورد رائد وعالمي لمجموعة واسعة من كربيد السيليكون (كربيد كربيد) power semiconductors today announces the immediate availability of a family of 1700V and 1200 V SiC Junction Transistors. Incorporating high voltage, high frequency and high-temperature capable SiC Junction Transistors will increase conversion efficiency and reduce the size/weight/volume of power electronics. These devices are targeted for use in a wide variety of applications including server, telecom and networking power supplies, uninterruptable power supplies, solar inverters, industrial motor control systems, and downhole applications.
Junction Transistors offered by GeneSiC exhibit ultra-fast switching capability, a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by commercial, commonly available 15 V IGBT gate drivers, unlike other SiC switches. While offering compatibility with SiC JFET drivers, Junction Transistors can be easily paralleled because of their matching transient characteristics.
“As power system designers continue to push the limits of operating frequency, while still demanding high circuit efficiencies, the need SiC switches which can offer a standard of performance and production uniformity. Utilizing the unique device and fabrication innovations, GeneSiC’s Transistor products help designers achieve all that in a more robust solution,” قال د. رانبير سينغ , رئيس شركة GeneSiC لأشباه الموصلات.
1700 V Junction Transistor Technical Highlights
- ثلاث عروض – 110 mOhms (GA16JT17-247); 250 mOhms (GA08JT17-247); و 500 mOhms (GA04JT17-247)
- Tjmax = 175°C
- Turn On/Off Rise/Fall Times <50 nanoseconds typical.
1200 V Junction Transistor Technical Highlights
- Two offerings – 220 mOhms (GA06JT12-247); و 460 mOhms (GA03JT12-247)
- Tjmax = 175°C
- Turn On/Off Rise/Fall Times <50 nanoseconds typical
جميع الأجهزة هي 100% تم اختباره وفقًا لتصنيفات الجهد/التيار الكاملة وموجود في مكان خالٍ من الهالوجين, RoHS compliant TO-247 packages. الأجهزة متاحة على الفور من موزعي GeneSiC المعتمدين.
