فئة: أخبار

Power System Design Interviews GeneSiC

نورمبرغ, Germany May 12, 2016 — GeneSiC Semiconductor’s President was interviewed by Alix Paultre of Power Systems Design (http://www.powersystemsdesign.com/psdcast-ranbir-singh-of-genesic-on-their-latest-silicon-carbide-tech/67) at the PCIM show in Nuremberg, ألمانيا.

 

Co-packaged SiC Transistor-Diode combination in a robust, isolated, 4-Leaded, mini-module packaging reduces Turn-On energy losses and enables flexible circuit designs for high frequency power converters

دالاس, فيرجينيا, مايو 13, 2015 — جينيسيك أشباه الموصلات, مورد رائد وعالمي لمجموعة واسعة من كربيد السيليكون (كربيد كربيد) power semiconductors today announces the immediate availability of 20 mOhm-1200 V SiC Junction Transistor-Diodes in an isolated, 4-Leaded mini-module packaging that enables extremely low Turn-On energies losses while offering flexible, modular designs in high frequency power converters. The use of high frequency, high voltage and low on-resistance capable SiC Transistors and Rectifiers will reduce the size/weight/volume of electronics applications requiring higher power handling at high operating frequencies. These devices are targeted for use in a wide variety of applications including induction heaters, plasma generators, fast chargers, DC-DC converters, and switched mode power supplies.

Co-packaged SiC Junction Transistors (SJT)-SiC Rectifiers offered by GeneSiC are uniquely applicable to inductive switching applications because SJTs are the only widebandgap switch offers >10 microsec repetitive short circuit capability, even at 80% of the rated voltages (eg. 960 V for a 1200 V device). In addition to the sub-10 nsec rise/falls times and a square reverse biased safe operation area (RBSOA), the Gate Return terminal in the new configuration significantly improves the ability to reduce the switching energies. These new class of products offers transient energy losses and switching times that are independent of junction temperature. SiC Junction Transistors from GeneSiC are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven at low Gate voltages, unlike other SiC switches.
SiC Schottky Rectifiers used in these mini-modules show low on-state voltage drops, good surge current ratings and industry’s lowest leakage currents at elevated temperatures. With temperature independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are ideal candidates for use in high efficiency circuits.
“GeneSiC’s SiC Transistor and Rectifier products are designed and manufactured to realize low on-state and switching losses. A combination of these technologies in an innovative package promises exemplar performance in power circuits demanding wide bandgap based devices. The mini-module packaging offers great design flexibility for use in a variety of power circuits like H-Bridge, Flyback and multi-level inverters” قال د. رانبير سينغ, رئيس شركة GeneSiC لأشباه الموصلات.
Product released today include
20 mOhm/1200 V SiC Junction Transistor/Rectifier Co-pack (GA50SICP12-227):
• Isolated SOT-227/mini-block/Isotop package
• Transistor Current Gain (hFE) >100
• Tjmax = 175oC (limited by packaging)
• Turn On/Off; Rise/Fall Times <10 nanoseconds typical.

جميع الأجهزة هي 100% tested to full voltage/current ratings. The devices are immediately available from GeneSiC’s Authorized Distributors.

للمزيد من المعلومات, يرجى زيارة: http://192.168.88.14/commercial-sic/sic-modules-copack/

حول شركة GeneSiC لأشباه الموصلات.

شركة GeneSiC Semiconductor. هو مبتكر رائد في درجات الحرارة العالية, كربيد السيليكون عالي الطاقة وفائق الجهد (كربيد كربيد) الأجهزة, والمورد العالمي لمجموعة واسعة من أشباه موصلات الطاقة. تشتمل مجموعة أجهزتها على مقوم قائم على SiC, الترانزستور, ومنتجات الثايرستور, as well as Silicon diode modules. قامت GeneSiC بتطوير ملكية فكرية ومعرفة تقنية واسعة النطاق تشمل أحدث التطورات في أجهزة الطاقة SiC, مع المنتجات الموجهة نحو الطاقة البديلة, السيارات, downhole oil drilling, التحكم في المحركات, مزود الطاقة, مواصلات, وتطبيقات إمدادات الطاقة غير المنقطعة. في 2011, فازت الشركة بجائزة R المرموقة&جائزة D100 لتسويق ثايرستور SiC عالي الجهد.

High Temperature (>210^سج) Junction Transistors and Rectifiers in small form factor metal can packages offer revolutionary performance benefits to a variety of applications including amplification, low noise circuitry and downhole actuator controls

دالاس, فيرجينيا, مارس 9, 2015 — جينيسيك أشباه الموصلات, مورد رائد وعالمي لمجموعة واسعة من كربيد السيليكون (كربيد كربيد) power semiconductors today announces the immediate availability of a line of compact, high temperature SiC Junction Transistors as well as a line of rectifiers in TO-46 metal can packages. These discrete components are designed and manufactured to operate under ambient temperatures of greater than 215^سج. The use of high temperature, high voltage and low on-resistance capable SiC Transistors and Rectifiers will reduce the size/weight/volume of electronics applications requiring higher power handling at elevated temperatures. These devices are targeted for use in a wide variety of applications including a wide variety of downhole circuits, geothermal instrumentation, solenoid actuation, general purpose amplification, and switched mode power supplies.

High Temperature SiC Junction Transistors (SJT) offered by GeneSiC exhibit sub-10 nsec rise/falls times enabling >10 MHz switching as well as a square reverse biased safe operation area (RBSOA). The transient energy losses and switching times are independent of junction temperature. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by 0/+5 V TTL gate drivers, unlike other SiC switches. Unique advantages of the SJT in contrast to other SiC switches is its higher long term reliability, >20 usec short circuit capability, and superior avalanche capability. These devices can be used as efficient amplifiers as they promise a much higher linearity than any other SiC switch.

High Temperature SiC Schottky Rectifiers being offered by GeneSiC show low on-state voltage drops, and industry’s lowest leakage currents at elevated temperatures. With temperature independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are ideal candidates for use in high efficiency, high temperature circuits. The TO-46 metal can packages as well as the associated packaging processes used to create these products critically enable long term use where high reliability is critical.

“GeneSiC’s Transistor and Rectifier products are designed and manufactured from the grounds up to enable high temperature operation. These compact TO-46 packaged SJTs offer high current gains (>110), 0/+5 V TTL control, and robust performance. These devices offer low conduction losses and high linearity. We design our “SHT” line of rectifiers, to offer low leakage currents at high temperatures. These metal can packaged products augment our TO-257 and metal SMD products released last year to offer small form factor, vibration resistant solutions” قال د. رانبير سينغ, رئيس شركة GeneSiC لأشباه الموصلات.

Products released today include:

240 mOhm SiC Junction Transistors:

• 300 V blocking voltage. رقم القطعة GA05JT03-46
• 100 V blocking voltage. رقم القطعة GA05JT01-46
• Current Gain (h_FE) >110
• ت_jmax = 210^سج
• Turn On/Off; Rise/Fall Times <10 nanoseconds typical.

Up to 4 Ampere High Temperature Schottky diodes:

• 600 V blocking voltage. رقم القطعة GB02SHT06-46
• 300 V blocking voltage. رقم القطعة GB02SHT03-46
• 100 V blocking voltage. رقم القطعة GB02SHT01-46
• Total capacitive charge 9 nC
• ت_jmax = 210^سج.

جميع الأجهزة هي 100% tested to full voltage/current ratings and housed in metal can TO-46 packages. The devices are immediately available from GeneSiC’s Authorized Distributors.

حول شركة GeneSiC لأشباه الموصلات.

شركة GeneSiC Semiconductor. هو مبتكر رائد في درجات الحرارة العالية, كربيد السيليكون عالي الطاقة وفائق الجهد (كربيد كربيد) الأجهزة, والمورد العالمي لمجموعة واسعة من أشباه موصلات الطاقة. تشتمل مجموعة أجهزتها على مقوم قائم على SiC, الترانزستور, ومنتجات الثايرستور, as well as Silicon diode modules. قامت GeneSiC بتطوير ملكية فكرية ومعرفة تقنية واسعة النطاق تشمل أحدث التطورات في أجهزة الطاقة SiC, مع المنتجات الموجهة نحو الطاقة البديلة, السيارات, downhole oil drilling, التحكم في المحركات, مزود الطاقة, مواصلات, وتطبيقات إمدادات الطاقة غير المنقطعة. في 2011, فازت الشركة بجائزة R المرموقة&جائزة D100 لتسويق ثايرستور SiC عالي الجهد.

للمزيد من المعلومات, يرجى زيارة http://192.168.88.14/high-temperature-sic/high-temperature-sic-schottky-rectifiers/; و http://192.168.88.14/high-temperature-sic/high-temperature-sic-junction-transistors/.

Gate Driver Board optimized for high switching speeds and behavior-based models enable power electronic design engineers to verify and quantify benefits of SJTs in board-level evaluation and circuit simulation

دالاس, V.A., نوفمبر 19, 2014 — جينيسيك أشباه الموصلات, مورد رائد وعالمي لمجموعة واسعة من كربيد السيليكون (كربيد كربيد) power semiconductors today announces the immediate availability of Gate Driver evaluation board and has expanded its design support for the industry’s lowest loss switches – the SiC Junction Transistor (SJT) – with a fully-qualified LTSPICE IV model. Using the new Gate Driver Board, power conversion circuit designers can verify the benefits of sub-15 nanosecond, temperature independent switching characteristics of SiC Junction Transistors, with low driver power losses. Incorporating the new SPICE models, circuit designers can easily evaluate the benefits GeneSiC’s SJTs provide for achieving a higher level of efficiency than is possible with conventional silicon power switching devices for comparably-rated devices.

SiC Junction Transistors have significantly different characteristics than other SiC Transistor technologies, as well as Silicon Transistors. Gate Driver boards that can provide low power losses while still offering high switching speeds were needed to provide drive solutions for utilizing the benefits of SiC Junction Transistors. GeneSiC’s fully isolated GA03IDDJT30-FR4 Gate driver board takes in 0/12V and a TTL signal to optimally condition the voltage/current waveforms required to provide small rise/fall times, while still minimizing the continuous current requirement for keeping the Normally-OFF SJT conducting during the on-state. The pin configuration and form factors are kept similar to other SiC transistors. GeneSiC has also released Gerber files and BOMs to end-user to enable them to incorporate the benefits of the driver design innovations realized.

SJTs offer well-behaved on-state and switching characteristics, making it easy to create behavior based SPICE models that agree remarkably well with the underlying physics based models as well. Using well-established and understood physics-based models, SPICE parameters were released after extensive testing with device behavior. GeneSiC’s SPICE models are compared to the experimentally measured data on all device datasheets and are applicable to all 1200 الخامس و 1700 V SiC Junction Transistors released.
GeneSiC’s SJTs are capable of delivering switching frequencies that are more than 15 times higher than IGBT-based solutions. Their higher switching frequencies can enable smaller magnetic and capacitive elements, thereby shrinking the overall size, weight and cost of power electronics systems.

This SiC Junction Transistor SPICE model adds to GeneSiC’s comprehensive suite of design support tools, technical documentation, and reliability information to provide power electronics engineers with the design resources necessary to implement GeneSiC’s comprehensive family of SiC Junction Transistors and Rectifiers into the next generation of power systems.

GeneSiC’s Gate Driver Board datasheets and SJT SPICE models can be downloaded from http://192.168.88.14/commercial-sic/sic-junction-transistors/

SiC switches offering lowest conduction losses and superior short circuit capability released for High Frequency Power Circuits

دالاس, فرجينيا., Oct 28, 2014 — جينيسيك أشباه الموصلات, مورد رائد وعالمي لمجموعة واسعة من كربيد السيليكون (كربيد كربيد) power semiconductors today announces the immediate availability of a family of low on-resistance 1700V and 1200 V SiC Junction Transistors in TO-247 packages. The use of high voltage, high frequency, high temperature and low on-resistance capable SiC Junction Transistors will increase conversion efficiency and reduce the size/weight/volume of power electronics applications requiring higher bus voltages. These devices are targeted for use in a wide variety of applications including DC microgrids, Vehicle Fast chargers, server, telecom and networking power supplies, uninterruptable power supplies, solar inverters, Wind power systems, and industrial motor control systems.

SiC Junction Transistors (SJT) offered by GeneSiC exhibit ultra-fast switching capability (similar to that of SiC MOSFETs), a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by commercially gate drivers, unlike other SiC switches. Unique advantages of the SJT in contrast to other SiC switches is its higher long term reliability, >10 usec short circuit capability, and superior avalanche capability

“These improved SJTs offer much higher current gains (>100), highly stable and robust performance as compared to other SiC switches. GeneSiC’s SJTs offer extremely low conduction losses at rated currents as superior turn-off losses in power circuits. Utilizing the unique device and fabrication innovations, GeneSiC’s Transistor products help designers achieve a more robust solution,” قال د. رانبير سينغ, رئيس شركة GeneSiC لأشباه الموصلات.

1700 V SiC Junction Transistor released

• 25 mOhms (GA50JT17-247), 65 mOhms (GA16JT17-247), 220 mOhms (GA04JT17-247)
• Current Gain (h_FE) >90
• ت_jmax = 175^سج
• Turn On/Off; Rise/Fall Times <30 nanoseconds typical.

1200 V SiC Junction Transistor released

• 25 mOhms (GA50JT12-247), 120 mOhm (GA10JT12-247), 210 mOhms (GA05JT12-247)
• Current Gain (h_FE) >90
• ت_jmax = 175^سج
• Turn On/Off; Rise/Fall Times <30 nanoseconds typical.

جميع الأجهزة هي 100% تم اختباره وفقًا لتصنيفات الجهد/التيار الكاملة وموجود في مكان خالٍ من الهالوجين, RoHS compliant TO-247 packages. الأجهزة متاحة على الفور من موزعي GeneSiC المعتمدين.

للمزيد من المعلومات, يرجى زيارة http://192.168.88.14/commercial-sic/sic-junction-transistors/

GeneSiC’s SiC Transistor and Rectifiers offer significant advantages towards achieving the goals of the Little Box Challenge

State-Of-the Art. Silicon Carbide Power Transistors & Rectifiers. Available. Now!

GeneSiC has a wide portfolio of products available right now worldwide from top distributors

Bare Die Chip form of SiC devices available Directly from factory (please fill the form below)

Discrete SJTs و Rectifiers in Commercial temperature ratings (175° C)

Discrete HiT SJTs and HiT Rectifiers in High Temperature (up to 250° C)

GeneSiC offers the widest variety of SiC products – in packaged products as well as bare-die format to allow greater design flexibility and innovation. GeneSiC is continuously striving to stay ahead by introducing new, innovative products. If you don’t see the exact product you are looking for today, you may see it in the near future.

The promise of high temperature in SiC Transistors realized through compatible industry-standard packages will critically enhance downhole and aerospace actuators and power supplies

دالاس, فرجينيا., Dec 10, 2013 — جينيسيك أشباه الموصلات, مورد رائد وعالمي لمجموعة واسعة من كربيد السيليكون (كربيد كربيد) power semiconductors today announces the immediate availability through its distributors and directly a family high temperature packaged 600 V SiC Junction Transistors (SJT) in the 3-50 Amperes current ratings in JEDEC industry-standard through hole and surface mount packages. Incorporating these high temperature, low on-resistance, high frequency SiC Transistors in hermetic packages, high temperature solders and encapsulation will increase conversion efficiency and reduce the size/weight/volume of high temperature power conversion applications.

Contemporary high temperature power supply, motor control and actuator circuits used in oil/gas/downhole and aerospace applications suffer from lack of availability of a viable high temperature Silicon Carbide solution. Silicon transistors suffer from low circuit efficiencies and large sizes because they suffer from high leakage currents and low poor switching characteristics. Both these parameters become worse at higher junction temperatures. With thermally constraint environments, ترتفع درجات حرارة الوصلات بسهولة تامة حتى عند مرور تيارات متواضعة. Hermetically packaged SiC transistors offer unique characteristics that promise to revolutionize the capability of downhole and aerospace applications. جينيسيك 650 V/3-50 A SiC Junction Transistors feature near zero switching times that does not change with temperature. ال 210^سC junction temperature-rated devices offer relatively large temperature margins for applications that are operating under extreme environments.

Junction Transistors offered by GeneSiC exhibit ultra-fast switching capability, a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by commercial, commonly available 15 V IGBT gate drivers, unlike other SiC switches. While offering compatibility with SiC JFET drivers, SiC Junction Transistors can be easily paralleled because of their matching transient characteristics.

“As downhole and aerospace application designers continue to push the limits of operating frequency, while still demanding high circuit efficiencies, they need SiC switches which can offer a standard of performance, reliability and production uniformity. Utilizing the unique device and fabrication innovations, GeneSiC’s SJT products help designers achieve all that in a more robust solution. These products complement the hermetic packaged SiC rectifier released last year by GeneSiC, and the bare die products released earlier this year, while paving the way for us to offer high temperature, low-inductance, power modules in the near future ” قال د. رانبير سينغ, رئيس شركة GeneSiC لأشباه الموصلات.

Isolated TO-257 with 600 V SJTs:

• 65 mOhms/20 Amp (2N7639-GA); 170 mOhms/8 Amp (2N7637-GA); و 425 mOhms/4 Amp (2N7635-GA)
• ت_jmax = 210^سج
• Turn On/Off; Rise/Fall Times <50 nanoseconds typical.
• Corresponding Bare Die GA20JT06-CAL (in 2N7639-GA); GA10JT06-CAL (in 2N7637-GA); and GA05JT06-CAL (in 2N7635-GA)

Non-Isolated TO-258 Prototype package with 600 SJTs

• 25 mOhms/50 Amp (GA50JT06-258 prototype package)
• ت_jmax = 210^سج
• Turn On/Off; Rise/Fall Times <50 nanoseconds typical.
• Corresponding Bare Die GA50JT06-CAL (in GA50JT06-258)

Surface Mount TO-276 (SMD0.5) with 600 SJTs

• 65 mOhms/20 Amp (2N7640-GA); 170 mOhms/8 Amp (2N7638-GA); و 425 mOhms/4 Amp (2N7636-GA)
• ت_jmax = 210^سج
• Turn On/Off; Rise/Fall Times <50 nanoseconds typical.

جميع الأجهزة هي 100% tested to full voltage/current ratings and housed in hermetic packages. يتم تقديم الدعم الفني ونماذج دوائر SPICE. The devices are immediately available from GeneSiC Directly and/or through its Authorized Distributors.

حول شركة GeneSiC لأشباه الموصلات.

شركة GeneSiC Semiconductor. هو مبتكر رائد في درجات الحرارة العالية, كربيد السيليكون عالي الطاقة وفائق الجهد (كربيد كربيد) الأجهزة, والمورد العالمي لمجموعة واسعة من أشباه موصلات الطاقة. تشتمل مجموعة أجهزتها على مقوم قائم على SiC, الترانزستور, ومنتجات الثايرستور, وكذلك منتجات مقوم السيليكون. قامت GeneSiC بتطوير ملكية فكرية ومعرفة تقنية واسعة النطاق تشمل أحدث التطورات في أجهزة الطاقة SiC, مع المنتجات الموجهة نحو الطاقة البديلة, السيارات, أسفل التنقيب عن النفط, التحكم في المحركات, مزود الطاقة, مواصلات, وتطبيقات إمدادات الطاقة غير المنقطعة. حصلت شركة GeneSiC على العديد من عقود البحث والتطوير من وكالات حكومية أمريكية, بما في ذلك ARPA-E, قسم الطاقة, القوات البحرية, جيش, داربا, DTRA, ووزارة الأمن الداخلي, وكذلك كبار المقاولين الحكوميين. في 2011, فازت الشركة بجائزة R المرموقة&جائزة D100 لتسويق ثايرستور SiC عالي الجهد.

للمزيد من المعلومات, يرجى زيارة http://192.168.88.14/index.php/hit-sic/sjt