Co-packaged SiC Transistor-Diode combination in a robust, isolated, 4-Leaded, mini-module packaging reduces Turn-On energy losses and enables flexible circuit designs for high frequency power converters
دالاس, فيرجينيا, مايو 13, 2015 — جينيسيك أشباه الموصلات, مورد رائد وعالمي لمجموعة واسعة من كربيد السيليكون (كربيد كربيد) power semiconductors today announces the immediate availability of 20 mOhm-1200 V SiC Junction Transistor-Diodes in an isolated, 4-Leaded mini-module packaging that enables extremely low Turn-On energies losses while offering flexible, modular designs in high frequency power converters. The use of high frequency, high voltage and low on-resistance capable SiC Transistors and Rectifiers will reduce the size/weight/volume of electronics applications requiring higher power handling at high operating frequencies. These devices are targeted for use in a wide variety of applications including induction heaters, plasma generators, fast chargers, DC-DC converters, and switched mode power supplies.
1200 V/20 mOhm Silicon Carbide Junction Transistor Rectifier-Copackaged in an Isolated SOT-227 package providing separate Gate Source and Sink capability
Co-packaged SiC Junction Transistors (SJT)-SiC Rectifiers offered by GeneSiC are uniquely applicable to inductive switching applications because SJTs are the only widebandgap switch offers >10 microsec repetitive short circuit capability, even at 80% of the rated voltages (eg. 960 V for a 1200 V device). In addition to the sub-10 nsec rise/falls times and a square reverse biased safe operation area (RBSOA), the Gate Return terminal in the new configuration significantly improves the ability to reduce the switching energies. These new class of products offers transient energy losses and switching times that are independent of junction temperature. SiC Junction Transistors from GeneSiC are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven at low Gate voltages, unlike other SiC switches.
SiC Schottky Rectifiers used in these mini-modules show low on-state voltage drops, good surge current ratings and industry’s lowest leakage currents at elevated temperatures. With temperature independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are ideal candidates for use in high efficiency circuits.
“GeneSiC’s SiC Transistor and Rectifier products are designed and manufactured to realize low on-state and switching losses. A combination of these technologies in an innovative package promises exemplar performance in power circuits demanding wide bandgap based devices. The mini-module packaging offers great design flexibility for use in a variety of power circuits like H-Bridge, Flyback and multi-level inverters” قال د. رانبير سينغ, رئيس شركة GeneSiC لأشباه الموصلات.
Product released today include
20 mOhm/1200 V SiC Junction Transistor/Rectifier Co-pack (GA50SICP12-227):
• Isolated SOT-227/mini-block/Isotop package
• Transistor Current Gain (hFE) >100
• Tjmax = 175oC (limited by packaging)
• Turn On/Off; Rise/Fall Times <10 nanoseconds typical.
جميع الأجهزة هي 100% tested to full voltage/current ratings. The devices are immediately available from GeneSiC’s Authorized Distributors.
للمزيد من المعلومات, يرجى زيارة: http://192.168.88.14/commercial-sic/sic-modules-copack/
حول شركة GeneSiC لأشباه الموصلات.
شركة GeneSiC Semiconductor. هو مبتكر رائد في درجات الحرارة العالية, كربيد السيليكون عالي الطاقة وفائق الجهد (كربيد كربيد) الأجهزة, والمورد العالمي لمجموعة واسعة من أشباه موصلات الطاقة. تشتمل مجموعة أجهزتها على مقوم قائم على SiC, الترانزستور, ومنتجات الثايرستور, as well as Silicon diode modules. قامت GeneSiC بتطوير ملكية فكرية ومعرفة تقنية واسعة النطاق تشمل أحدث التطورات في أجهزة الطاقة SiC, مع المنتجات الموجهة نحو الطاقة البديلة, السيارات, downhole oil drilling, التحكم في المحركات, مزود الطاقة, مواصلات, وتطبيقات إمدادات الطاقة غير المنقطعة. في 2011, فازت الشركة بجائزة R المرموقة&جائزة D100 لتسويق ثايرستور SiC عالي الجهد.
