The promise of high temperature in SiC Transistors realized through compatible industry-standard packages will critically enhance downhole and aerospace actuators and power supplies
دالاس, فرجينيا., Dec 10, 2013 — جينيسيك أشباه الموصلات, مورد رائد وعالمي لمجموعة واسعة من كربيد السيليكون (كربيد كربيد) power semiconductors today announces the immediate availability through its distributors and directly a family high temperature packaged 600 V SiC Junction Transistors (SJT) in the 3-50 Amperes current ratings in JEDEC industry-standard through hole and surface mount packages. Incorporating these high temperature, low on-resistance, high frequency SiC Transistors in hermetic packages, high temperature solders and encapsulation will increase conversion efficiency and reduce the size/weight/volume of high temperature power conversion applications.
Contemporary high temperature power supply, motor control and actuator circuits used in oil/gas/downhole and aerospace applications suffer from lack of availability of a viable high temperature Silicon Carbide solution. Silicon transistors suffer from low circuit efficiencies and large sizes because they suffer from high leakage currents and low poor switching characteristics. Both these parameters become worse at higher junction temperatures. With thermally constraint environments, ترتفع درجات حرارة الوصلات بسهولة تامة حتى عند مرور تيارات متواضعة. Hermetically packaged SiC transistors offer unique characteristics that promise to revolutionize the capability of downhole and aerospace applications. جينيسيك 650 V/3-50 A SiC Junction Transistors feature near zero switching times that does not change with temperature. ال 210سC junction temperature-rated devices offer relatively large temperature margins for applications that are operating under extreme environments.
Junction Transistors offered by GeneSiC exhibit ultra-fast switching capability, a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by commercial, commonly available 15 V IGBT gate drivers, unlike other SiC switches. While offering compatibility with SiC JFET drivers, SiC Junction Transistors can be easily paralleled because of their matching transient characteristics.
“As downhole and aerospace application designers continue to push the limits of operating frequency, while still demanding high circuit efficiencies, they need SiC switches which can offer a standard of performance, reliability and production uniformity. Utilizing the unique device and fabrication innovations, GeneSiC’s SJT products help designers achieve all that in a more robust solution. These products complement the hermetic packaged SiC rectifier released last year by GeneSiC, and the bare die products released earlier this year, while paving the way for us to offer high temperature, low-inductance, power modules in the near future ” قال د. رانبير سينغ, رئيس شركة GeneSiC لأشباه الموصلات.
Isolated TO-257 with 600 V SJTs:
- 65 mOhms/20 Amp (2N7639-GA); 170 mOhms/8 Amp (2N7637-GA); و 425 mOhms/4 Amp (2N7635-GA)
- تjmax = 210سج
- Turn On/Off; Rise/Fall Times <50 nanoseconds typical.
- Corresponding Bare Die GA20JT06-CAL (in 2N7639-GA); GA10JT06-CAL (in 2N7637-GA); and GA05JT06-CAL (in 2N7635-GA)
Non-Isolated TO-258 Prototype package with 600 SJTs
- 25 mOhms/50 Amp (GA50JT06-258 prototype package)
- تjmax = 210سج
- Turn On/Off; Rise/Fall Times <50 nanoseconds typical.
- Corresponding Bare Die GA50JT06-CAL (in GA50JT06-258)
Surface Mount TO-276 (SMD0.5) with 600 SJTs
- 65 mOhms/20 Amp (2N7640-GA); 170 mOhms/8 Amp (2N7638-GA); و 425 mOhms/4 Amp (2N7636-GA)
- تjmax = 210سج
- Turn On/Off; Rise/Fall Times <50 nanoseconds typical.
جميع الأجهزة هي 100% tested to full voltage/current ratings and housed in hermetic packages. يتم تقديم الدعم الفني ونماذج دوائر SPICE. The devices are immediately available from GeneSiC Directly and/or through its Authorized Distributors.
حول شركة GeneSiC لأشباه الموصلات.
شركة GeneSiC Semiconductor. هو مبتكر رائد في درجات الحرارة العالية, كربيد السيليكون عالي الطاقة وفائق الجهد (كربيد كربيد) الأجهزة, والمورد العالمي لمجموعة واسعة من أشباه موصلات الطاقة. تشتمل مجموعة أجهزتها على مقوم قائم على SiC, الترانزستور, ومنتجات الثايرستور, وكذلك منتجات مقوم السيليكون. قامت GeneSiC بتطوير ملكية فكرية ومعرفة تقنية واسعة النطاق تشمل أحدث التطورات في أجهزة الطاقة SiC, مع المنتجات الموجهة نحو الطاقة البديلة, السيارات, أسفل التنقيب عن النفط, التحكم في المحركات, مزود الطاقة, مواصلات, وتطبيقات إمدادات الطاقة غير المنقطعة. حصلت شركة GeneSiC على العديد من عقود البحث والتطوير من وكالات حكومية أمريكية, بما في ذلك ARPA-E, قسم الطاقة, القوات البحرية, جيش, داربا, DTRA, ووزارة الأمن الداخلي, وكذلك كبار المقاولين الحكوميين. في 2011, فازت الشركة بجائزة R المرموقة&جائزة D100 لتسويق ثايرستور SiC عالي الجهد.
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