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杜勒斯, Va., Feb. 25, 2013 /PRNewswire-iReach/ — GeneSiC半导体, 各种碳化硅的先驱和全球供应商 (碳化硅) power semiconductors today announces the immediate availability of a family of 1700V and 1200 V 碳化硅结晶体管. Incorporating high voltage, high frequency and high-temperature capable SiC Junction Transistors will increase conversion efficiency and reduce the size/weight/volume of power electronics. These devices are targeted for use in a wide variety of applications including server, 电信和网络电源, 不间断电源, 太阳能逆变器, industrial motor control systems, and downhole applications.

GeneSiC 提供的结型晶体管具有超快的开关能力, 方形反向偏置安全操作区 (RBSOA), 以及与温度无关的瞬态能量损耗和开关时间. 这些开关无栅极氧化物, 常关, 表现出导通电阻的正温度系数, 并且能够由商业驱动, 普遍可用 15 V IGBT 栅极驱动器, 与其他 SiC 开关不同. 同时提供与 SiC JFET 驱动器的兼容性, Junction Transistors can be easily paralleled because of their matching transient characteristics.

“As power system designers continue to push the limits of operating frequency, 同时仍然要求高电路效率, the need SiC switches which can offer a standard of performance and production uniformity. 利用独特的设备和制造创新, GeneSiC’s Transistor products help designers achieve all that in a more robust solution,” 博士说. 兰比尔·辛格 , GeneSiC半导体总裁.

1700 V Junction Transistor Technical Highlights

• Three offerings – 110 毫欧姆 (GA16JT17-247); 250 毫欧姆 (GA08JT17-247); 和 500 毫欧姆 (GA04JT17-247)
• 最高温度 = 175°C
• Turn On/Off Rise/Fall Times <50 纳秒典型值.

1200 V Junction Transistor Technical Highlights

• Two offerings – 220 毫欧姆 (GA06JT12-247); 和 460 毫欧姆 (GA03JT12-247)
• 最高温度 = 175°C
• Turn On/Off Rise/Fall Times <50 纳秒典型值

所有设备都是 100% 经过全电压/电流额定值测试并采用无卤素封装, 符合 RoHS 标准的 TO-247 封装. 这些设备可立即从 GeneSiC 的授权经销商处购买.

Aug 30, 2011 – Dulles, VA – New Physics Lets Thyristors Reach Higher Level

An electric power grid supplies reliable power with the help of electronic devices that ensure smooth, reliable power flow. Until now, silicon-based assemblies have been relied upon, but they have been unable to handle the requirements of the smart grid. Wide-band-gap materials such as silicon carbide (碳化硅) offer a better alternative as they are capable of higher switching speeds, a higher breakdown voltage, lower switching losses, and a higher junction temperature than traditional silicon-based switches. The first such SiC-based device to reach market is the Ultra-high-voltage Silicon Carbide Thyristor (SiC Thyristor), developed by GeneSiC Semiconductor Inc., 杜勒斯, Va., with support from Sandia National Laboratories, Albuquerque, N.M., the U.S. Department of Energy/Electricity Delivery, and the U.S. Army/Armament Research, Development and Engineering Center, Picatinny Arsenal, N.J.

The developers adopted a different operational physics for this device, which operates on minority carrier transportation and an integrated third terminal rectifier, which is one more than other commercial SiC devices. Developers adopted a new fabrication technique that supports ratings above 6,500 V, as well as a new gate-anode design for high-current devices. Capable of performing at temperatures up to 300 C and current at 80 一种, the SiC Thyristor offers up to 10 times higher voltage, 高出四倍的阻断电压, 和 100 开关频率比硅基晶闸管快 1 倍.

杜勒斯, VA, 七月 14, 2011 — 电阻&D 杂志选择了 GeneSiC Semiconductor Inc. 杜勒斯, VA 作为享有盛誉的获得者 2011 电阻&D 100 高额定电压碳化硅器件商业化奖.

GeneSiC半导体公司, 上周，一家基于碳化硅的功率器件的重要创新者荣获了著名的奖项 2011 电阻&D 100 奖. 该奖项表彰 GeneSiC 引入了最重要的技术之一, 新引入的多学科研究和开发进展 2010. 电阻&D Magazine 认可 GeneSiC 的超高压 SiC 晶闸管能够实现以前从未用于电力电子演示的阻断电压和频率. 的额定电压 >6.5千伏, 通态额定电流 80 A和工作频率 >5 kHz 远高于市场上先前推出的那些. These capabilities achieved by GeneSiC’s Thyristors critically enable power electronics researchers to develop grid-tied inverters, Flexible

AC Transmission Systems (FACTS) and High Voltage DC Systems (HVDC). This will allow new inventions and product developments within renewable energy, 太阳能逆变器, wind power inverters, and energy storage industries. 博士. 兰比尔·辛格, President of GeneSiC Semiconductor comented “It is anticipated that large-scale markets in solid-state electrical substations and wind turbine generators will open up after researchers in the power conversion arena will fully realize the benefits of SiC Thyristors. These first generation SiC Thyristors utilize the lowest demonstrated on-state voltage drop and differential on-resistances ever achieved in SiC Thyristors. We intend to release future generations of SiC Thyristors optimized for Gate-controlled Turn Off capability and pulsed power capability and >10kV ratings. As we continue to develop high temperature ultra-high voltage packaging solutions, the present 6.5kV Thyristors are packaged in modules with fully soldered contacts, limited to 150oC junction temperatures.” Since this product was launched in October 2010, GeneSiC has booked orders from multiple customers towards demonstration of advanced power electronics hardware using these Silicon Carbide Thyristors. GeneSiC continues to develop its family of Silicon Carbide Thyristor products. R&D on early version for power conversion applications were developed through SBIR funding support from US Dept. of Energy. More advanced, 脉冲功率优化碳化硅晶闸管正在根据与 ARDEC 的另一份 SBIR 合同进行开发, 美国军队. 利用这些技术发展, 来自GeneSiC的内部投资和来自多个客户的商业订单, GeneSiC 能够将这些 UHV 晶闸管作为商业产品提供.

由 R 举办的第 49 届年度技术竞赛&D Magazine 对来自不同公司和行业参与者的参赛作品进行了评估, 世界各地的研究机构和大学. 该杂志的编辑和外部专家小组担任评委, 评估每个条目对科学和研究世界的重要性.

根据 R&D 杂志, 赢得 R&D 100 奖项提供了行业知名的卓越标志, 政府, 和学术界证明该产品是年度最具创新性的想法之一. 该奖项表彰了 GeneSiC 作为创造基于技术的产品的全球领导者，这些产品对我们的工作和生活产生了影响.

关于 GeneSiC 半导体, 公司.

GeneSiC 是 SiC 功率器件领域快速崛起的创新者，并坚定地致力于碳化硅的发展 (碳化硅) 基于设备: (一种) 用于电网的 HV-HF SiC 器件, 脉冲功率和定向能武器; 和 (乙) 用于飞机执行器和石油勘探的高温 SiC 功率器件. GeneSiC半导体公司. 开发碳化硅 (碳化硅) 高温半导体器件, 辐射, 和电网应用. 这包括开发整流器, 场效应管, 双极器件以及粒子 & 光子探测器. GeneSiC 可以使用广泛的半导体设计套件, 制造, 此类设备的表征和测试设施. GeneSiC 利用其在器件和工艺设计方面的核心竞争力，为其客户开发尽可能最好的 SiC 器件. 该公司通过提供专门针对每个客户要求的高品质产品而脱颖而出. GeneSiC 拥有包括 ARPA-E 在内的美国主要政府机构的主要/分包合同, 美国能源部, 海军, DARPA, 国土安全部, 商务部和美国部内的其他部门. 国防. GeneSiC 继续迅速加强其杜勒斯大学的设备和人员基础设施, 弗吉尼亚工厂. 公司正在积极招聘在化合物半导体器件制造方面有经验的人员, 半导体测试和探测器设计. 有关公司及其产品的更多信息，请致电 GeneSiC，网址为 703-996-8200 或通过访问 www.genesicsemi.com.

Feb 28, 2011 – Dulles, VA – GeneSiC Semiconductor 很高兴地宣布其在 ARPA-E 能源创新峰会上入选著名的技术展示, 由能源部高级研究计划局 - 能源共同主办 (ARPA-E) 和清洁技术与可持续产业组织 (CTSI). Hundreds of top technologists and cutting-edge clean tech organizations competed to participate in the Showcase, a hallway of America’s most promising prospects for winning the future in energy.

As one of ARPA-E’s selected organizations, GeneSiC Semiconductor will exhibit its Silicon Carbide to nearly 2,000 national leaders gathering to drive long-term American competitiveness in the energy sector, including top researchers, investors, entrepreneurs, corporate executives and government officials. More than 200 groundbreaking technologies from ARPA-E awardees, corporations, National Labs and Department of Energy R&D programs will be featured at the event.

“This Summit brings together organizations that understand the need to collaborate and partner to bring the next generation of energy technologies to market,” said GeneSiC Semiconductor, 总统, 博士. 兰比尔·辛格. “It’s a rare and exciting opportunity to have so many key players in the energy community together under one roof and we look forward to sharing our Silicon Carbide Power Devices with other innovators and investors at the Technology Showcase.”

Research and business development teams from 14 Corporate Acceleration Partners committed to technology commercialization will also be present including Dow, Bosch, Applied Materials and Lockheed Martin.

The Summit also features high-profile speakers including U.S. Energy Secretary Steven Chu, ARPA-E Director Arun Majumdar, U.S. Navy Secretary Raymond Mabus, former California Governor Arnold Schwarzenegger and Bank of America Chairman Charles Holliday.

The second annual ARPA-E Energy Innovation Summit will take place February 28 – 行进 2, 2011 在华盛顿郊外的盖洛德会议中心, 直流电. 要了解更多信息或注册，请访问: www.ct-si.org/events/EnergyInnovation.

关于 GeneSiC 半导体

GeneSiC半导体公司. 开发用于高温的宽带隙半导体器件, 辐射, 和电网应用. 这包括开发整流器, 电源开关和双极设备. GeneSiC 使用一套独特而广泛的半导体设计, 制造, 此类设备的表征和测试设施. GeneSiC 利用其在器件和工艺设计方面的核心竞争力，为其客户开发尽可能最好的 SiC 器件. 该公司通过为广泛的高容量市场提供高质量的产品而脱颖而出. GeneSiC 拥有包括 ARPA-E 在内的美国主要政府机构的主要/分包合同, 美国能源部, 海军, 军队, 美国宇航局, DARPA, 国土安全部, 商务部和美国部内的其他部门. 国防.

关于 ARPA-E

高级研究计划署——能源 (ARPA-E) 是美国境内的新机构. 能源部——第一个专注于突破性能源技术的机构，这些技术可以从根本上改变我们使用能源的方式. 而不是直接进行研究, ARPA-E 投资于高风险, 大学正在开发的高回报能源技术, 创业公司, 小型企业, and corporations. Our staff combines industry-leading scientists, engineers, and investment executives to identify promising solutions to the nation’s most critical energy problems and to fast-track top technologies towards the marketplace – which is critical to securing the nation’s global technology leadership and creating new American industries and jobs. Visit www.arpa-e.energy.govfor more information.

About CTSI

The Clean Technology & Sustainable Industries Organization (CTSI), a 501c6 non-profit industry association, represents the organizations developing, commercializing, and implementing energy, water, and environmental technologies. Clean technologies offer much needed solutions to growing resource security and sustainability concerns and are critical to maintaining economic competitiveness. CTSI brings together global leaders for advocacy, community development, networking, and information sharing to help bring these needed technologies to market more rapidly. Visit www.ct-si.org for more information.

十二月 14, 2010 – GeneSiC Semiconductor Inc., a key innovator of novel Silicon Carbide (碳化硅) devices for high temperature, high power, and ultra-high voltage applications, announces selection of its project titled “Integrated SiC Super Junction Transistor-Diode Devices for high-power motor control modules operating at 500 oC” by the US National Aeronautics and Space Administration (美国宇航局) for a Phase I SBIR award. This SBIR project is focused on the development of Monolithic Integrated SiC JBS diode-Super Junction Transistor (MIDSJT) devices for operation under Venus-like ambients (500 °C surface temperatures). The SiC MIDSJT devices developed in this program will be used to construct motor control power modules for direct integration with Venus exploration rovers.

“We are pleased with the confidence expressed by NASA in our high temperature SiC device solutions. This project will enable GeneSiC to develop industry-leading SiC-based power management technologies through its innovative device and packaging solutions” 博士说. Siddarth Sundaresan, GeneSiC’s Director of Technology. “The SiC MIDSJT devices targeted in this program will allow Kilowatt-level power to be handled with digital precision at temperatures as high as 500 °C. In addition to outer space applications, this novel technology has the potential to revolutionize critical aerospace and geothermal oil drilling hardware requiring ambient temperatures in excess of 200 °C. These application areas are currently limited by the poor high-temperature performance of contemporary Silicon and even SiC based device technologies such as JFETs and MOSFETs” he added.

GeneSiC 继续迅速加强其杜勒斯大学的设备和人员基础设施, 弗吉尼亚工厂. 公司正在积极招聘在化合物半导体器件制造方面有经验的人员, 半导体测试和探测器设计. 有关公司及其产品的更多信息，请致电 GeneSiC，网址为 703-996-8200 或通过访问 www.genesicsemi.com.

关于 GeneSiC 半导体, 公司.

GeneSiC半导体公司. 开发碳化硅 (碳化硅) 高温半导体器件, 辐射, 和电网应用. 这包括开发整流器, 场效应管, 双极器件以及粒子 & 光子探测器. GeneSiC 可以使用广泛的半导体设计套件, 制造, 此类设备的表征和测试设施. GeneSiC 利用其在器件和工艺设计方面的核心竞争力，为其客户开发尽可能最好的 SiC 器件. 该公司通过提供专门针对每个客户要求的高品质产品而脱颖而出. GeneSiC 拥有包括 ARPA-E 在内的美国主要政府机构的主要/分包合同, 美国能源部, 海军, DARPA, 国土安全部, 商务部和美国部内的其他部门. 国防.

杜勒斯, VA, 十一月. 1, 2010 –In a first of its kind offering, GeneSiC Semiconductor announces the availability of a family of 6.5kV SCR-mode Silicon Carbide Thyristors for use in power electronics for Smart Grid applications. Revolutionary performance advantages of these power devices are expected to spur key innovations in utility-scale power electronics hardware to increase the accessibility and exploitation of Distributed Energy Resources (DER). “Until now, multi-kV Silicon Carbide (碳化硅) power devices were not openly available to US researchers to fully exploit the well-known advantages– namely 2-10kHz operating frequencies at 5-15kV ratings – of SiC-based power devices.” commented Dr. 兰比尔·辛格, President of GeneSiC. “GeneSiC has recently completed delivery of many 6.5kV/40A, 6.5kV/60A and 6.5kV/80A Thyristors to multiple customers conducting research in renewable energy, Army and Naval power system applications. SiC devices with these ratings are now being offered more widely.”

Silicon Carbide based Thyristors offer 10X higher voltage, 100X faster switching frequencies and higher temperature operation as compared to conventional Silicon-based Thyristors. Targeted applications research opportunities for these devices include general purpose medium voltage power conversion (MVDC), Grid-tied solar inverters, wind power inverters, pulsed power, weapon systems, ignition control, and trigger control. It is now well established that ultra-high voltage (>10千伏) 碳化硅 (碳化硅) device technology will play a revolutionary role in the next-generation utility grid. Thyristor-based SiC devices offer the highest on-state performance for >5 kV devices, and are widely applicable towards medium voltage power conversion circuits like Fault-Current Limiters, AC-DC converters, Static VAR compensators and Series Compensators. SiC based Thyristors also offer the best chance of early adoption due to their similarities to conventional power grid elements. Deploying these advanced power semiconductor technologies could provide as much as a 25-30 percent reduction in electricity consumption through increased efficiencies in delivery of electrical power.

博士. Singh continues “It is anticipated that large-scale markets in solid-state electrical substations and wind turbine generators will open up after researchers in the power conversion arena will fully realize the benefits of SiC Thyristors. These first generation SiC Thyristors utilize the lowest demonstrated on-state voltage drop and differential on-resistances ever achieved in SiC Thyristors. We intend to release future generations of SiC Thyristors optimized for Gate-controlled Turn Off capability and >10kV ratings. As we continue to develop high temperature ultra-high voltage packaging solutions, the present 6.5kV Thyristors are packaged in modules with fully soldered contacts, limited to 150oC junction temperatures.” GeneSiC is a fast emerging innovator in the area of SiC power devices and has a strong commitment to the development of Silicon Carbide (碳化硅) 基于设备: (一种) 用于电网的 HV-HF SiC 器件, 脉冲功率和定向能武器; 和 (乙) 用于飞机执行器和石油勘探的高温 SiC 功率器件.

Located near Washington, DC in Dulles, Virginia, GeneSiC半导体公司. 是高温领域的领先创新者, high-power and ultra high-voltage silicon carbide (碳化硅) 设备. Current development projects include high-temperature rectifiers, SuperJunction Transistors (SJT) and a wide variety of Thyristor based devices. GeneSiC 已经或已经与美国主要政府机构签订了主要/分包合同, 包括能源部, 海军, 军队, DARPA, 和国土安全部. 公司目前正在经历大幅增长, 聘请合格的功率器件和检测器设计人员, 制造, 和测试. 了解更多, 请拜访 www.genesicsemi.com.

杜勒斯, VA, 九月 28, 2010 – Advanced Research Projects Agency – Energy (ARPA-E) has entered into a Cooperative Agreement with the GeneSiC Semiconductor-led team towards the development of the novel ultra high-voltage silicon carbide (碳化硅) Thyristor based devices. These devices are expected to be key enablers for integrating large-scale wind and solar power plants into the next-generation Smart Grid.

“This highly competitive award to GeneSiC will allow us to extend our technical leadership position in the multi-kV Silicon Carbide technology, as well as our commitment to grid-scale alternative energy solutions with solid state solutions,” commented Dr. 兰比尔·辛格, President of GeneSiC. “Multi-kV SiC Thyristors we’re developing are the key enabling technology towards the realization of Flexible AC Transmission Systems (FACTS) elements and High Voltage DC (HVDC) architectures envisaged towards an integrated, efficient, Smart Grid of the future. GeneSiC’s SiC-based Thyristors offer 10X higher voltage, 100X faster switching frequencies and higher temperature operation in FACTS and HVDC power processing solutions as compared to conventional Silicon-based Thyristors.”

In April 2010, GeneSiC responded to the Agile Delivery of Electrical Power Technology (ADEPT) solicitation from ARPA-E that sought to invest in materials for fundamental advances in high voltage switches that has the potential to leapfrog existing power converter performance while offering reductions in cost. The company’s proposal titled “Silicon Carbide Anode Switched Thyristor for medium voltage power conversion” was selected to provide a lightweight, solid-state, medium voltage energy conversion for high power applications such as solid-state electrical substations and wind turbine generators. Deploying these advanced power semiconductor technologies could provide as much as a 25-30 percent reduction in electricity consumption through increased efficiencies in delivery of electrical power. Innovations selected were to support and promote U.S. businesses through technological leadership, through a highly competitive process.

Silicon carbide is a next-generation semiconductor material with vastly superior properties to conventional silicon, such as the ability to handle ten times the voltage—and one-hundred times the current—at temperatures as high as 300ºC. These characteristics make it ideally suited to high-power applications such as hybrid and electric vehicles, renewable energy (wind and solar) installations, and electrical-grid control systems.

It is now well established that ultra-high voltage (>10千伏) 碳化硅 (碳化硅) device technology will play a revolutionary role in the next-generation utility grid. Thyristor-based SiC devices offer the highest on-state performance for >5 kV devices, and are widely applicable towards medium voltage power conversion circuits like Fault-Current Limiters, AC-DC converters, Static VAR Compensators and Series Compensators. SiC based Thyristors also offer the best chance of early adoption due to their similarities to conventional power grid elements. Other promising applications and advantages for these devices include:

• Power-management and power-conditioning systems for Medium Voltage DC conversion sought under Future Naval Capability (FNC) of US Navy, Electro-magnetic launch systems, high energy weapon systems and medical imaging. The 10-100X higher operating frequency capability allows unprecedented improvements in size, weight, volume and ultimately, cost of such systems.
• A variety of energy storage, high-temperature and high-energy physics applications. Energy storage and power grid applications are receiving increasing attention as the world focuses on more efficient and cost-effective energy-management solutions.

GeneSiC 是 SiC 功率器件领域快速崛起的创新者，并坚定地致力于碳化硅的发展 (碳化硅) 基于设备: (一种) 用于电网的 HV-HF SiC 器件, 脉冲功率和定向能武器; 和 (乙) 用于飞机执行器和石油勘探的高温 SiC 功率器件.

“We’ve emerged as a leader in ultra-high voltage SiC technology by leveraging our core competency in device and process design with an extensive suite of fabrication, characterization, and test facilities,” concludes Dr. Singh. “GeneSiC’s position has now been effectively validated by the US DOE with this significant follow-on award.”

关于 GeneSiC 半导体

Strategically located near Washington, DC in Dulles, Virginia, GeneSiC半导体公司. 是高温领域的领先创新者, high-power and ultra high-voltage silicon carbide (碳化硅) 设备. Current development projects include high-temperature rectifiers, SuperJunction Transistors (SJT) and a wide variety of Thyristor based devices. GeneSiC 已经或已经与美国主要政府机构签订了主要/分包合同, 包括能源部, 海军, 军队, DARPA, 和国土安全部. 公司目前正在经历大幅增长, 聘请合格的功率器件和检测器设计人员, 制造, 和测试. 了解更多, 请拜访 www.genesicsemi.com.

Wednesday, November 12th 2008 – The US Department of Energy has awarded GeneSiC Semiconductor two separate grants totaling $1.5M for the development of high-voltage silicon carbide (碳化硅) devices that will serve as key enablers for wind- and solar-power integration with the nation’s electricity grid.

“These awards demonstrate the DOE’s confidence in GeneSiC’s capabilities, as well as its commitment to alternative energy solutions,” notes Dr. 兰比尔·辛格, president of GeneSiC. “An integrated, efficient power grid is critical to the nation’s energy future — and the SiC devices we’re developing are critical for overcoming the inefficiencies of conventional silicon technologies.”

The first award is a $750k Phase II SBIR grant for the development of fast, ultra-high-voltage SiC bipolar devices. The second is a $750k Phase II STTR grant for the development of optically gated high-power SiC switches.

Silicon carbide is a next-generation semiconductor material with the ability to handle 10x the voltage and 100x the current of silicon, making it ideally suited to high-power applications such as renewable energy (wind and solar) installations and electrical-grid control systems.

Specifically, the two awards are for:

• Development of high-frequency, multi-kilovolt SiC gate-turn-off (GTO) power devices. Government and commercial applications include power-management and conditioning systems for ships, the utility industry, and medical imaging.
• Design and fabrication of optically gated high-voltage, high-power SiC switching devices. Using fiber-optics to switch power is an ideal solution for environments plagued by electro-magnetic interference (EMI), and applications that require ultra high-voltages.

The SiC devices GeneSiC is developing serve a variety of energy storage, power grid, and military applications, which are receiving increasing attention as the world focuses on more efficient and cost-effective energy-management solutions.

Based outside Washington, DC in Dulles, Virginia, GeneSiC半导体公司. 是高温领域的领先创新者, high-power and ultra high-voltage silicon carbide (碳化硅) 设备. Current development projects include high-temperature rectifiers, field-effect transistors (场效应管) and bipolar devices, as well as particle & 光子探测器. GeneSiC has prime/sub-contracts from major US Government agencies, 包括能源部, 海军, DARPA, 和国土安全部. 公司目前正在经历大幅增长, 聘请合格的功率器件和检测器设计人员, 制造, 和测试. 了解更多, 请拜访 www.genesicsemi.com.

杜勒斯, VA, 十月. 23, 2007 — GeneSiC Semiconductor Inc., a fast-rising innovator of high-temperature, high-power and ultra high-voltage silicon carbide (碳化硅) 设备, announced that is has been awarded three separate small business grants from the US Department of Energy during FY07. The SBIR and STTR grants will be used by GeneSiC to demonstrate novel high-voltage SiC devices for a variety of energy storage, power grid, high-temperature and high-energy physics applications. Energy storage and power grid applications are receiving increasing attention as the world focuses on more efficient and cost-effective energy management solutions.

“We are pleased with the level of confidence expressed by various offices within the US Department on Energy with regard to our high-power device solutions. Injecting this funding into our advanced SiC technology programs will result in an industry-leading line SiC devices,” commented GeneSiC’s President, 博士. 兰比尔·辛格. “The devices being developed in these projects promise to provide critical enabling technology to support a more-efficient power grid, and will open the door to new commercial and military hardware technology that has remained unrealized due to the limitations of contemporary silicon-based technologies.”

The three projects include:

• A new Phase I SBIR award focused on high current, multi-kV Thyristor-based devices geared towards energy storage applications.
• A Phase II SBIR follow-on award for development of multi-kV SiC power devices for high voltage power supplies for high power RF system applications awarded by the DOE Office of Science.
• A Phase I STTR award focused on optically gated high-voltage, high-frequency SiC power devices for environments rich in electro-magnetic interference, including high power RF energy systems, and directed energy weapon systems.

Along with the awards, GeneSiC has recently relocated operations to an expanded laboratory and office building in Dulles, Virginia, significantly upgrading its equipment, infrastructure and is in the process of adding additional key personnel.

“GeneSiC 利用其在器件和工艺设计方面的核心竞争力，为其客户开发尽可能最好的 SiC 器件, backing that up with access to an extensive suite of fabrication, characterization and testing facilities,” concluded Dr. Singh. “We feel those capabilities have been effectively validated by the US DOE with these new and follow-on awards.”

有关公司及其产品的更多信息，请致电 GeneSiC，网址为 703-996-8200 或通过访问 www.genesicsemi.com.