杜勒斯, Va., Feb. 25, 2013 /PRNewswire-iReach/ — GeneSiC半导体, 各种碳化硅的先驱和全球供应商 (碳化硅) power semiconductors today announces the immediate availability of a family of 1700V and 1200 V 碳化硅结晶体管. Incorporating high voltage, high frequency and high-temperature capable SiC Junction Transistors will increase conversion efficiency and reduce the size/weight/volume of power electronics. These devices are targeted for use in a wide variety of applications including server, 电信和网络电源, 不间断电源, 太阳能逆变器, industrial motor control systems, and downhole applications.
GeneSiC 提供的结型晶体管具有超快的开关能力, 方形反向偏置安全操作区 (RBSOA), 以及与温度无关的瞬态能量损耗和开关时间. 这些开关无栅极氧化物, 常关, 表现出导通电阻的正温度系数, 并且能够由商业驱动, 普遍可用 15 V IGBT 栅极驱动器, 与其他 SiC 开关不同. 同时提供与 SiC JFET 驱动器的兼容性, Junction Transistors can be easily paralleled because of their matching transient characteristics.
“As power system designers continue to push the limits of operating frequency, 同时仍然要求高电路效率, the need SiC switches which can offer a standard of performance and production uniformity. 利用独特的设备和制造创新, GeneSiC’s Transistor products help designers achieve all that in a more robust solution,” 博士说. 兰比尔·辛格 , GeneSiC半导体总裁.
1700 V Junction Transistor Technical Highlights
- Three offerings – 110 毫欧姆 (GA16JT17-247); 250 毫欧姆 (GA08JT17-247); 和 500 毫欧姆 (GA04JT17-247)
- 最高温度 = 175°C
- Turn On/Off Rise/Fall Times <50 纳秒典型值.
1200 V Junction Transistor Technical Highlights
- Two offerings – 220 毫欧姆 (GA06JT12-247); 和 460 毫欧姆 (GA03JT12-247)
- 最高温度 = 175°C
- Turn On/Off Rise/Fall Times <50 纳秒典型值
所有设备都是 100% 经过全电压/电流额定值测试并采用无卤素封装, 符合 RoHS 标准的 TO-247 封装. 这些设备可立即从 GeneSiC 的授权经销商处购买.
