杜勒斯, VA, 十一月. 1, 2010 –In a first of its kind offering, GeneSiC Semiconductor announces the availability of a family of 6.5kV SCR-mode Silicon Carbide Thyristors for use in power electronics for Smart Grid applications. Revolutionary performance advantages of these power devices are expected to spur key innovations in utility-scale power electronics hardware to increase the accessibility and exploitation of Distributed Energy Resources (DER). “Until now, multi-kV Silicon Carbide (碳化硅) power devices were not openly available to US researchers to fully exploit the well-known advantages– namely 2-10kHz operating frequencies at 5-15kV ratings – of SiC-based power devices.” commented Dr. 兰比尔·辛格, President of GeneSiC. “GeneSiC has recently completed delivery of many 6.5kV/40A, 6.5kV/60A and 6.5kV/80A Thyristors to multiple customers conducting research in renewable energy, Army and Naval power system applications. SiC devices with these ratings are now being offered more widely.”
Silicon Carbide based Thyristors offer 10X higher voltage, 100X faster switching frequencies and higher temperature operation as compared to conventional Silicon-based Thyristors. Targeted applications research opportunities for these devices include general purpose medium voltage power conversion (MVDC), Grid-tied solar inverters, wind power inverters, pulsed power, weapon systems, ignition control, and trigger control. It is now well established that ultra-high voltage (>10千伏) 碳化硅 (碳化硅) device technology will play a revolutionary role in the next-generation utility grid. Thyristor-based SiC devices offer the highest on-state performance for >5 kV devices, and are widely applicable towards medium voltage power conversion circuits like Fault-Current Limiters, AC-DC converters, Static VAR compensators and Series Compensators. SiC based Thyristors also offer the best chance of early adoption due to their similarities to conventional power grid elements. Deploying these advanced power semiconductor technologies could provide as much as a 25-30 percent reduction in electricity consumption through increased efficiencies in delivery of electrical power.
博士. Singh continues “It is anticipated that large-scale markets in solid-state electrical substations and wind turbine generators will open up after researchers in the power conversion arena will fully realize the benefits of SiC Thyristors. These first generation SiC Thyristors utilize the lowest demonstrated on-state voltage drop and differential on-resistances ever achieved in SiC Thyristors. We intend to release future generations of SiC Thyristors optimized for Gate-controlled Turn Off capability and >10kV ratings. As we continue to develop high temperature ultra-high voltage packaging solutions, the present 6.5kV Thyristors are packaged in modules with fully soldered contacts, limited to 150oC junction temperatures.” GeneSiC is a fast emerging innovator in the area of SiC power devices and has a strong commitment to the development of Silicon Carbide (碳化硅) 基于设备: (一种) 用于电网的 HV-HF SiC 器件, 脉冲功率和定向能武器; 和 (乙) 用于飞机执行器和石油勘探的高温 SiC 功率器件.
Located near Washington, DC in Dulles, Virginia, GeneSiC半导体公司. 是高温领域的领先创新者, high-power and ultra high-voltage silicon carbide (碳化硅) 设备. Current development projects include high-temperature rectifiers, SuperJunction Transistors (SJT) and a wide variety of Thyristor based devices. GeneSiC 已经或已经与美国主要政府机构签订了主要/分包合同, 包括能源部, 海军, 军队, DARPA, 和国土安全部. 公司目前正在经历大幅增长, 聘请合格的功率器件和检测器设计人员, 制造, 和测试. 了解更多, 请拜访 www.genesicsemi.com.
