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High Temperature (210 C) SiC Junction Transistors offered in hermetic packages

The promise of high temperature in SiC Transistors realized through compatible industry-standard packages will critically enhance downhole and aerospace actuators and power supplies

Dulles, Virginia., Dec 10, 2013 — GeneSiC Semiconductor, en pionjär och global leverantör av ett brett sortiment av kiselkarbid (Sic) power semiconductors today announces the immediate availability through its distributors and directly a family high temperature packaged 600 V SiC Junction Transistors (SJT) in the 3-50 Amperes current ratings in JEDEC industry-standard through hole and surface mount packages. Incorporating these high temperature, low on-resistance, high frequency SiC Transistors in hermetic packages, high temperature solders and encapsulation will increase conversion efficiency and reduce the size/weight/volume of high temperature power conversion applications.HiT_Schottky

Contemporary high temperature power supply, motor control and actuator circuits used in oil/gas/downhole and aerospace applications suffer from lack of availability of a viable high temperature Silicon Carbide solution. Silicon transistors suffer from low circuit efficiencies and large sizes because they suffer from high leakage currents and low poor switching characteristics. Both these parameters become worse at higher junction temperatures. With thermally constraint environments, kopplingstemperaturerna stiger ganska lätt även när blygsamma strömmar passerar. Hermetically packaged SiC transistors offer unique characteristics that promise to revolutionize the capability of downhole and aerospace applications. GeneSiC 650 V/3-50 A SiC Junction Transistors feature near zero switching times that does not change with temperature. De 210oC junction temperature-rated devices offer relatively large temperature margins for applications that are operating under extreme environments.

Junction Transistors offered by GeneSiC exhibit ultra-fast switching capability, a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by commercial, commonly available 15 V IGBT gate drivers, unlike other SiC switches. While offering compatibility with SiC JFET drivers, SiC Junction Transistors can be easily paralleled because of their matching transient characteristics.

“As downhole and aerospace application designers continue to push the limits of operating frequency, while still demanding high circuit efficiencies, they need SiC switches which can offer a standard of performance, reliability and production uniformity. Utilizing the unique device and fabrication innovations, GeneSiC’s SJT products help designers achieve all that in a more robust solution. These products complement the hermetic packaged SiC rectifier released last year by GeneSiC, and the bare die products released earlier this year, while paving the way for us to offer high temperature, low-inductance, power modules in the near future ” sa Dr. Ranbir Singh, President för GeneSiC Semiconductor.

Isolated TO-257 with 600 V SJTs:

  • 65 mOhms/20 Amp (2N7639-GA); 170 mOhms/8 Amp (2N7637-GA); och 425 mOhms/4 Amp (2N7635-GA)
  • Tjmax = 210oC
  • Turn On/Off; Rise/Fall Times <50 nanoseconds typical.
  • Corresponding Bare Die GA20JT06-CAL (in 2N7639-GA); GA10JT06-CAL (in 2N7637-GA); and GA05JT06-CAL (in 2N7635-GA)

Non-Isolated TO-258 Prototype package with 600 SJTs

  • 25 mOhms/50 Amp (GA50JT06-258 prototype package)
  • Tjmax = 210oC
  • Turn On/Off; Rise/Fall Times <50 nanoseconds typical.
  • Corresponding Bare Die GA50JT06-CAL (in GA50JT06-258)

Surface Mount TO-276 (SMD0.5) with 600 SJTs

  • 65 mOhms/20 Amp (2N7640-GA); 170 mOhms/8 Amp (2N7638-GA); och 425 mOhms/4 Amp (2N7636-GA)
  • Tjmax = 210oC
  • Turn On/Off; Rise/Fall Times <50 nanoseconds typical.

Alla enheter är 100% tested to full voltage/current ratings and housed in hermetic packages. Teknisk support och SPICE-kretsmodeller erbjuds. The devices are immediately available from GeneSiC Directly and/or through its Authorized Distributors.

Om GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc.. är en ledande innovatör inom högtemperatur, högeffekt och ultrahögspänning kiselkarbid (Sic) enheter, och global leverantör av ett brett utbud av krafthalvledare. Dess portfölj av enheter inkluderar SiC-baserad likriktare, transistor, och tyristorprodukter, samt Silicon likriktare produkter. GeneSiC har utvecklat omfattande immateriella rättigheter och teknisk kunskap som omfattar de senaste framstegen inom SiC-kraftenheter, med produkter inriktade på alternativ energi, bil-, ned ole oljeborrning, Motor kontroll, strömförsörjning, transport, och avbrottsfri strömförsörjning. GeneSiC har erhållit ett flertal forsknings- och utvecklingskontrakt från amerikanska myndigheter, inklusive ARPA-E, Institutionen för energi, Marin, Armé, DARPA, DTRA, och Department of Homeland Security, såväl som stora statliga huvudentreprenörer. I 2011, företaget vann det prestigefyllda R&D100-pris för kommersialisering av SiC-tyristorer med ultrahög spänning.

För mer information, besök http://192.168.88.14/index.php/hit-sic/sjt