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GeneSiC Releases 25 mOhm/1700 V Silicon Carbide Transistors

SiC switches offering lowest conduction losses and superior short circuit capability released for High Frequency Power Circuits

Dulles, Virginia., okt 28, 2014 — GeneSiC Semiconductor, en pioner og global leverandør av et bredt utvalg av silisiumkarbid (SiC) power semiconductors today announces the immediate availability of a family of low on-resistance 1700V and 1200 V SiC Junction Transistors in TO-247 packages. The use of high voltage, high frequency, high temperature and low on-resistance capable SiC Junction Transistors will increase conversion efficiency and reduce the size/weight/volume of power electronics applications requiring higher bus voltages. These devices are targeted for use in a wide variety of applications including DC microgrids, Vehicle Fast chargers, server, strømforsyninger for telekom og nettverk, avbruddsfri strømforsyning, solcelleomformere, Wind power systems, and industrial motor control systems.1410 28 GA50JT17-247

SiC Junction Transistors (SJT) offered by GeneSiC exhibit ultra-fast switching capability (similar to that of SiC MOSFETs), et firkantet omvendt forspent trygt operasjonsområde (RBSOA), samt temperaturuavhengige forbigående energitap og koblingstider. Disse bryterne er gate-oksidfrie, normalt av, viser positiv temperaturkoeffisient for på-motstand, and are capable of being driven by commercially gate drivers, i motsetning til andre SiC-svitsjer. Unique advantages of the SJT in contrast to other SiC switches is its higher long term reliability, >10 usec short circuit capability, and superior avalanche capability

“These improved SJTs offer much higher current gains (>100), highly stable and robust performance as compared to other SiC switches. GeneSiC’s SJTs offer extremely low conduction losses at rated currents as superior turn-off losses in power circuits. Bruker den unike enheten og fabrikasjonsinnovasjonene, GeneSiC’s Transistor products help designers achieve a more robust solution,” sa Dr. Ranbir Singh, President for GeneSiC Semiconductor.

1700 V SiC Junction Transistor released

1200 V SiC Junction Transistor released

Alle enheter er 100% testet til full spenning/strøm og plassert i halogenfri, RoHS-kompatible TO-247-pakker. Enhetene er umiddelbart tilgjengelige fra GeneSiCs autoriserte distributører.

For mer informasjon, besøk http://192.168.88.14/commercial-sic/sic-junction-transistors/