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General Purpose High Temperature SiC Transistors and Rectifiers Offered at Low Cost

High Temperature (>210oC) Junction Transistors and Rectifiers in small form factor metal can packages offer revolutionary performance benefits to a variety of applications including amplification, low noise circuitry and downhole actuator controls

DULLES, VA, mars 9, 2015 — GeneSiC Semiconductor, en pioner og global leverandør av et bredt utvalg av silisiumkarbid (SiC) power semiconductors today announces the immediate availability of a line of compact, high temperature SiC Junction Transistors as well as a line of rectifiers in TO-46 metal can packages. These discrete components are designed and manufactured to operate under ambient temperatures of greater than 215oC. The use of high temperature, high voltage and low on-resistance capable SiC Transistors and Rectifiers will reduce the size/weight/volume of electronics applications requiring higher power handling at elevated temperatures. These devices are targeted for use in a wide variety of applications including a wide variety of downhole circuits, geothermal instrumentation, solenoid actuation, general purpose amplification, og byttet modus strømforsyninger.

High Temperature SiC Junction Transistors (SJT) offered by GeneSiC exhibit sub-10 nsec rise/falls times enabling >10 MHz switching as well as a square reverse biased safe operation area (RBSOA). The transient energy losses and switching times are independent of junction temperature. Disse bryterne er gate-oksidfrie, normalt av, viser positiv temperaturkoeffisient for på-motstand, and are capable of being driven by 0/+5 V TTL gate drivers, i motsetning til andre SiC-svitsjer. Unique advantages of the SJT in contrast to other SiC switches is its higher long term reliability, >20 usec short circuit capability, and superior avalanche capability. These devices can be used as efficient amplifiers as they promise a much higher linearity than any other SiC switch.

High Temperature SiC Schottky Rectifiers being offered by GeneSiC show low on-state voltage drops, and industry’s lowest leakage currents at elevated temperatures. Med temperaturuavhengig, nesten null omvendt gjenopprettingssvitsjekarakteristikk, SiC Schottky rectifiers are ideal candidates for use in high efficiency, high temperature circuits. The TO-46 metal can packages as well as the associated packaging processes used to create these products critically enable long term use where high reliability is critical.

“GeneSiC’s Transistor and Rectifier products are designed and manufactured from the grounds up to enable high temperature operation. These compact TO-46 packaged SJTs offer high current gains (>110), 0/+5 V TTL control, and robust performance. These devices offer low conduction losses and high linearity. We design our “SHT” line of rectifiers, to offer low leakage currents at high temperatures. These metal can packaged products augment our TO-257 and metal SMD products released last year to offer small form factor, vibration resistant solutions” sa Dr. Ranbir Singh, President for GeneSiC Semiconductor.

Products released today include:TO-46 SiC Transistor Diodes

240 mOhm SiC Junction Transistors:

  • 300 V blocking voltage. Part number GA05JT03-46
  • 100 V blocking voltage. Part number GA05JT01-46
  • Current Gain (hFE) >110
  • Tjmax = 210oC
  • Turn On/Off; Tider for stigning/fall <10 nanosekunder typisk.

Up to 4 Ampere High Temperature Schottky diodes:

  • 600 V blocking voltage. Part number GB02SHT06-46
  • 300 V blocking voltage. Part number GB02SHT03-46
  • 100 V blocking voltage. Part number GB02SHT01-46
  • Total capacitive charge 9 nC
  • Tjmax = 210oC.

Alle enheter er 100% tested to full voltage/current ratings and housed in metal can TO-46 packages. The devices are immediately available from GeneSiC’s Authorized Distributors.

Om GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc.. er en ledende innovatør innen høytemperatur, høyeffekt og ultrahøyspent silisiumkarbid (SiC) enheter, og global leverandør av et bredt spekter av krafthalvledere. Dens portefølje av enheter inkluderer SiC-basert likeretter, transistor, og tyristorprodukter, samt silisiumdiodemoduler. GeneSiC har utviklet omfattende åndsverk og teknisk kunnskap som omfatter de siste fremskrittene innen SiC-kraftenheter, med produkter rettet mot alternativ energi, bilindustrien, nedihulls oljeboring, Motor kontroll, strømforsyning, transport, og avbruddsfri strømforsyning. I 2011, selskapet vant den prestisjetunge R&D100-pris for kommersialisering av ultrahøyspent SiC-tyristorer.

For mer informasjon, besøk gjerne http://192.168.88.14/high-temperature-sic/high-temperature-sic-schottky-rectifiers/; og http://192.168.88.14/high-temperature-sic/high-temperature-sic-junction-transistors/.