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General Purpose High Temperature SiC Transistors and Rectifiers Offered at Low Cost

High Temperature (>210oC) Junction Transistors and Rectifiers in small form factor metal can packages offer revolutionary performance benefits to a variety of applications including amplification, low noise circuitry and downhole actuator controls

ダレス, VA, 行進 9, 2015 — GeneSiCセミコンダクター, 幅広い炭化ケイ素のパイオニアでありグローバルサプライヤー (SiC) power semiconductors today announces the immediate availability of a line of compact, high temperature SiC Junction Transistors as well as a line of rectifiers in TO-46 metal can packages. These discrete components are designed and manufactured to operate under ambient temperatures of greater than 215oC. The use of high temperature, high voltage and low on-resistance capable SiC Transistors and Rectifiers will reduce the size/weight/volume of electronics applications requiring higher power handling at elevated temperatures. These devices are targeted for use in a wide variety of applications including a wide variety of downhole circuits, geothermal instrumentation, solenoid actuation, general purpose amplification, and switched mode power supplies.

High Temperature SiC Junction Transistors (SJT) offered by GeneSiC exhibit sub-10 nsec rise/falls times enabling >10 MHz switching as well as a square reverse biased safe operation area (RBSOA). The transient energy losses and switching times are independent of junction temperature. これらのスイッチはゲート酸化物フリーです, ノーマルオフ, オン抵抗の正の温度係数を示す, and are capable of being driven by 0/+5 V TTL gate drivers, 他のSiCスイッチとは異なり. 他の SiC スイッチと比較した SJT の独特の利点は、長期信頼性が高いことです。, >20 usec 短絡機能, 優れた雪崩能力. These devices can be used as efficient amplifiers as they promise a much higher linearity than any other SiC switch.

High Temperature SiC Schottky Rectifiers being offered by GeneSiC show low on-state voltage drops, and industry’s lowest leakage currents at elevated temperatures. With temperature independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are ideal candidates for use in high efficiency, high temperature circuits. The TO-46 metal can packages as well as the associated packaging processes used to create these products critically enable long term use where high reliability is critical.

“GeneSiC’s Transistor and Rectifier products are designed and manufactured from the grounds up to enable high temperature operation. These compact TO-46 packaged SJTs offer high current gains (>110), 0/+5 V TTL control, and robust performance. These devices offer low conduction losses and high linearity. We design our “SHT” line of rectifiers, to offer low leakage currents at high temperatures. These metal can packaged products augment our TO-257 and metal SMD products released last year to offer small form factor, vibration resistant solutions” 博士は言った. ランビール・シン, GeneSiCセミコンダクター社長.

Products released today include:TO-46 SiC Transistor Diodes

240 mOhm SiC Junction Transistors:

  • 300 V blocking voltage. 品番 GA05JT03-46
  • 100 V blocking voltage. 品番 GA05JT01-46
  • 電流ゲイン (hFE) >110
  • Tjmax = 210oC
  • オン/オフにする; 立ち上がり/立ち下がり時間 <10 典型的なナノ秒.

Up to 4 Ampere High Temperature Schottky diodes:

すべてのデバイスは 100% tested to full voltage/current ratings and housed in metal can TO-46 packages. The devices are immediately available from GeneSiC’s Authorized Distributors.

GeneSiCSemiconductorIncについて.

GeneSiC Semiconductor Inc. は、高温における主要なイノベーターです。, 高出力および超高電圧の炭化ケイ素 (SiC) デバイス, 幅広いパワー半導体のグローバルサプライヤー. そのデバイスのポートフォリオには、SiCベースの整流器が含まれています, トランジスタ, およびサイリスタ製品, as well as Silicon diode modules. GeneSiCは、SiCパワーデバイスの最新の進歩を網羅する広範な知的財産および技術的知識を開発しました。, 代替エネルギーをターゲットにした製品, 自動車, downhole oil drilling, モーター制御, 電源, 交通機関, および無停電電源装置アプリケーション. の 2011, 会社は一流のRを獲得しました&超高電圧SiCサイリスタの商品化に対するD100賞.

詳細については, 来てください http://192.168.88.14/high-temperature-sic/high-temperature-sic-schottky-rectifiers/; そして http://192.168.88.14/high-temperature-sic/high-temperature-sic-junction-transistors/.