Silicon Carbide Schottky Rectifiers extended to 3300 Volt ratings

High Voltage assemblies to benefit from these low capacitance rectifiers offering temperature-independent zero reverse recovery currents in isolated packages

Thief River Falls/Dulles, Virginia., May 28, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors announce the immediate availability of 3300 V/0.3 Ampere SiC Schottky Rectifiers – the GAP3SLT33-220FP. This unique product represents the highest voltage SiC rectifier on the market, and is specifically targeted towards voltage multiplier circuits and high voltage assemblies used in a wide range of X-Ray, Laser and particle generator power supplies.3300 V SiC Schottky diode GeneSiC

Contemporary voltage multiplier circuits suffer from low circuit efficiencies and large sizes because the reverse recovery currents from Silicon rectifiers discharge the parallel connected capacitors. At higher rectifier junction temperatures, this situation becomes worse because the reverse recovery current in Silicon rectifiers increases with temperature. With thermally constraints high voltage assemblies, junction temperatures rise quite easily even when modest currents are passed. High Voltage SiC rectifiers offer unique characteristics that promises to revolutionize the high voltage assemblies. GeneSiC’s 3300 V/0.3 A Schottky rectifiers feature zero reverse recovery current that does not change with temperature. This relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high voltage generator circuits, through use of higher AC input voltages. The near-ideal switching characteristics allow the elimination/dramatic reduction of voltage balancing networks and snubber circuits. The TO-220 Full Pack overmolded isolated package features industry-standard form factor with increased pin spacing in through hole assemblies.3300 V SiC Schottky diode SMB GeneSiC

“This product offering comes from years of sustained efforts at GeneSiC. We believe the 3300 V rating is a key differentiator for the high voltage generator market, and will allow significant benefits to our customers. GeneSiC’s low VF, low capacitance SiC Schottky Rectifiers enables this breakthrough product” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

3300 V/0.3 A SiC Rectifier Technical Highlights

  • On-state Drop of 1.7 V at 0.3 A
  • Positive temperature coefficient on VF
  • Tjmax = 175oC
  • Capacitive charge 52 nC (typical).

All devices are 100% tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant industry-standard TO-220FP (Full Pack) packages. The devices are immediately available from GeneSiC’s Authorized Distributor, Digikey.

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon rectifier products. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, down ole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. GeneSiC has obtained numerous research and development contracts from US Government agencies, including the ARPA-E, Department of Energy, Navy, Army, DARPA, DTRA, and the Department of Homeland Security, as well as major government prime contractors. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

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