Silicon Carbide Bare Die up to 8000 V Ratings from GeneSiC

High Voltage circuits and assemblies to benefit from SiC chips that offer unprecedented voltage ratings and ultra-high speed switching

Dulles, Virginia., Nov 7, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors announce the immediate availability of 8000 V SiC PiN Rectifiers; 8000 V SiC Schottky Rectifiers, 3300 V SiC Schottky Rectifiers and 6500 V SiC Thyristors in bare die format. These unique products represents the highest voltage SiC devices on the market, and is specifically targeted towards oil and gas instrumentation, voltage multiplier circuits and high voltage assemblies.

Contemporary ultra-high voltage circuits suffer from low circuit efficiencies and large sizes because the reverse recovery currents from Silicon rectifiers discharge the parallel connected capacitors. At higher rectifier junction temperatures, this situation worsens further since the reverse recovery current in Silicon rectifiers increases with temperature. With thermally constraints high voltage assemblies, junction temperatures rise quite easily even when modest currents are passed. High Voltage SiC rectifiers offer unique characteristics that promises to revolutionize the high voltage assemblies. GeneSiC’s 8000 V and 3300 V Schottky rectifiers feature zero reverse recovery current that does not change with temperature. This relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high voltage generator circuits, through use of higher AC input voltages. The near-ideal switching characteristics allow the elimination/dramatic reduction of voltage balancing networks and snubber circuits. 8000 V PiN Rectifiers offer higher current levels and higher operating temperatures. 6500 V SiC Thyristor chips are also available to accelerate R&D of new systems.

“These products showcase GeneSiC’s strong lead in the development of SiC chips in the multi-kV ratings. We believe the 8000 V rating goes beyond what Silicon devices can offer at rated temperatures, and will allow significant benefits to our customers. GeneSiC’s low VF, low capacitance SiC Rectifiers and Thyristors will enable system level benefits not possible before” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

8000 V/2 A SiC Bare Die PiN Rectifier Technical Highlights

  • Tjmax = 210oC
  • Reverse Leakage Currents < 50 uA at 175oC
  • Reverse Recovery Charge 558 nC (typical).

8000 V/50 mA SiC Bare Die Schottky Rectifier Technical Highlights

  • Total Capacitance 25 pF (typical, at -1 V, 25oC).
  • Positive temperature coefficient on VF
  • Tjmax = 175oC

6500 V SiC Thyristor Bare Die Technical Highlights

  • Three offerings – 80 Amperes (GA080TH65-CAU); 60 Amperes (GA060TH65-CAU); and 40 Amperes (GA040TH65-CAU)
  • Tjmax = 200oC

3300 V/0.3 A SiC Bare Die Rectifier Technical Highlights

  • On-state Drop of 1.7 V at 0.3 A
  • Positive temperature coefficient on VF
  • Tjmax = 175oC
  • Capacitive charge 52 nC (typical).

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon rectifier products. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, down ole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. GeneSiC has obtained numerous research and development contracts from US Government agencies, including the ARPA-E, Department of Energy, Navy, Army, DARPA, DTRA, and the Department of Homeland Security, as well as major government prime contractors. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

For more information, please visit