Wysłany dnia Czerwiec 10, 2019Czerwiec 10, 2019 przez Editor0A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature Aug, 2008A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature