Emerging Silicon-Carbide Power Devices Enable Revolutionary Changes in High Voltage Power Conversion
Reliability of SiC MOS devices
Reliability of SiC MOS devices
Nowatorskie przełączniki bipolarne SiC MOS do >10 Zastosowania kV
Reliability and performance limitations in SiC power device
A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
Commercial Impact of Silicon Carbide
Commercial Impact of Silicon Carbide