Co-packaged SiC Transistor-Diode combination in a robust, isolated, 4-Leaded, mini-module packaging reduces Turn-On energy losses and enables flexible circuit designs for high frequency power converters
ダレス, VA, 五月 13, 2015 — GeneSiCセミコンダクター, 幅広い炭化ケイ素のパイオニアでありグローバルサプライヤー (SiC) power semiconductors today announces the immediate availability of 20 mOhm-1200 V SiC Junction Transistor-Diodes in an isolated, 4-Leaded mini-module packaging that enables extremely low Turn-On energies losses while offering flexible, modular designs in high frequency power converters. The use of high frequency, high voltage and low on-resistance capable SiC Transistors and Rectifiers will reduce the size/weight/volume of electronics applications requiring higher power handling at high operating frequencies. These devices are targeted for use in a wide variety of applications including induction heaters, plasma generators, fast chargers, DC-DC converters, and switched mode power supplies.
Co-packaged SiC Junction Transistors (SJT)-SiC Rectifiers offered by GeneSiC are uniquely applicable to inductive switching applications because SJTs are the only widebandgap switch offers >10 microsec repetitive short circuit capability, even at 80% of the rated voltages (eg. 960 V for a 1200 V device). In addition to the sub-10 nsec rise/falls times and a square reverse biased safe operation area (RBSOA), the Gate Return terminal in the new configuration significantly improves the ability to reduce the switching energies. These new class of products offers transient energy losses and switching times that are independent of junction temperature. SiC Junction Transistors from GeneSiC are gate-oxide free, ノーマルオフ, オン抵抗の正の温度係数を示す, and are capable of being driven at low Gate voltages, 他のSiCスイッチとは異なり.
SiC Schottky Rectifiers used in these mini-modules show low on-state voltage drops, good surge current ratings and industry’s lowest leakage currents at elevated temperatures. With temperature independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are ideal candidates for use in high efficiency circuits.
“GeneSiC’s SiC Transistor and Rectifier products are designed and manufactured to realize low on-state and switching losses. A combination of these technologies in an innovative package promises exemplar performance in power circuits demanding wide bandgap based devices. The mini-module packaging offers great design flexibility for use in a variety of power circuits like H-Bridge, Flyback and multi-level inverters” 博士は言った. ランビール・シン, GeneSiCセミコンダクター社長.
Product released today include
20 mOhm/1200 V SiC Junction Transistor/Rectifier Co-pack (GA50SICP12-227):
• Isolated SOT-227/mini-block/Isotop package
• Transistor Current Gain (hFE) >100
• Tjmax = 175oC (limited by packaging)
• Turn On/Off; 立ち上がり/立ち下がり時間 <10 典型的なナノ秒.
すべてのデバイスは 100% tested to full voltage/current ratings. The devices are immediately available from GeneSiC’s Authorized Distributors.
詳細については, 来てください: http://192.168.88.14/commercial-sic/sic-modules-copack/
GeneSiCSemiconductorIncについて.
GeneSiC Semiconductor Inc. は、高温における主要なイノベーターです。, 高出力および超高電圧の炭化ケイ素 (SiC) デバイス, 幅広いパワー半導体のグローバルサプライヤー. そのデバイスのポートフォリオには、SiCベースの整流器が含まれています, トランジスタ, およびサイリスタ製品, as well as Silicon diode modules. GeneSiCは、SiCパワーデバイスの最新の進歩を網羅する広範な知的財産および技術的知識を開発しました。, 代替エネルギーをターゲットにした製品, 自動車, downhole oil drilling, モーター制御, 電源, 交通機関, および無停電電源装置アプリケーション. の 2011, 会社は一流のRを獲得しました&超高電圧SiCサイリスタの商品化に対するD100賞.