GeneSiC introduces Silicon Carbide Junction Transistors

DULLES, Va., Feb. 25, 2013 /PRNewswire-iReach/ — GeneSiC Semiconductor, isang pioneer at pandaigdigang supplier ng malawak na hanay ng Silicon Carbide (Sic) power semiconductors today announces the immediate availability of a family of 1700V and 1200 V SiC Junction Transistors. Incorporating high voltage, high frequency and high-temperature capable SiC Junction Transistors will increase conversion efficiency and reduce the size/weight/volume of power electronics. These devices are targeted for use in a wide variety of applications including server, Mga supply ng kuryente sa telecom at networking, Suplay ng kuryente walang tigil, Solar Inverters, industrial motor control systems, and downhole applications.

Ang mga Junction Transistor na inaalok ng GeneSiC ay nagpapakita ng napakabilis na kakayahan sa paglipat, isang square reverse biased safe operation area (RBSOA), pati na rin ang temperatura-independent lumilipas na enerhiya pagkawala at paglipat ng mga oras. Ang mga switch na ito ay walang gate oxide, normal na off, magpakita ng positibong temperatura koepisyente ng on-resistance, at may kakayahang magmaneho ng komersyal, karaniwang magagamit 15 V IGBT gate driver, di tulad ng ibang SiC switch. Habang nag-aalok ng pagiging tugma sa SiC JFET driver, Junction Transistors can be easily paralleled because of their matching transient characteristics.

As power system designers continue to push the limits of operating frequency, habang hinihingi pa rin ang mga high circuit efficiency, the need SiC switches which can offer a standard of performance and production uniformity. Paggamit ng natatanging aparato at gawa gawa makabagong ideya, GeneSiC’s Transistor products help designers achieve all that in a more robust solution,” sinabi Dr. rantso singh , Pangulo ng GeneSic Semiconductor.

1700 V Junction Transistor Technical Highlights

  • Tatlong handog – 110 mOhms (GA16JT17-247); 250 mOhms (GA08JT17-247); at 500 mOhms (GA04JT17-247)
  • Tjmax = 175°C
  • Turn On/Off Rise/Fall Times <50 nanoseconds tipikal.

1200 V Junction Transistor Technical Highlights

  • Two offerings – 220 mOhms (GA06JT12-247); at 460 mOhms (GA03JT12-247)
  • Tjmax = 175°C
  • Turn On/Off Rise/Fall Times <50 nanoseconds tipikal

Lahat ng device ay 100% sinubukan sa buong boltahe / kasalukuyang mga rating at bahay sa Halogen-Free, RoHS compliant TO-247 na mga pakete. Ang mga aparato ay agad na magagamit mula sa GeneSiC's Authorized Distributors.