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SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints

High Voltage, Reverse Recovery-free SiC Schottky Diodes to critically enable Solar Inverters and High Voltage assemblies by offering smallest form factor surface mount capabilities

Dulles, Virginia., Nobyembre 19, 2013 — GeneSiC Semiconductor, isang pioneer at pandaigdigang supplier ng malawak na hanay ng Silicon Carbide (Sic) power semiconductors today announces the immediate availability of a family of Industry-standard SMB (JEDEC DO-214AA) packaged SiC Rectifiers in the 650 – 3300 V range. Incorporating these high voltage, reverse recovery-free, high frequency and high-temperature capable SiC Diodes will increase conversion efficiency and reduce the size/weight/volume of multi-kV assemblies. These products are targeted towards Micro-solar inverters as well as voltage multiplier circuits used in a wide range of X-Ray, Laser at particle generator kapangyarihan supplies.AllRectifiers

Contemporary Micro-solar inverters and voltage multiplier circuits may suffer from low circuit efficiencies and large sizes because the reverse recovery currents from Silicon rectifiers. Sa mas mataas na rectifier temperatura ng junction, sitwasyon na ito ay nagiging mas masahol pa dahil ang reverse pagbawi kasalukuyang sa Silicon rectifiers ay nagdaragdag sa temperatura. Sa thermally contraints mataas na boltahe assemblies, junction temperatura tumaas lubos madali kahit na kapag disente kasalukuyang ay lumipas. High Voltage SiC rectifiers offer unique characteristics that promises to revolutionize the micro-solar inverters and high voltage assemblies. GeneSiC ni 650 V/1 A; 1200 V/2 A and 3300 V/0.3 Isang Schotky rectifiers tampok zero reverse pagbawi kasalukuyang na hindi nagbabago sa temperatura. Ang 3300 V-rated devices offer relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high voltage generator circuits, sa pamamagitan ng paggamit ng mas mataas na AC input boltahe. Ang malapit-ideal na paglipat ng mga katangian ay nagbibigay-daan sa pag-aalis / dramatic pagbabawas ng boltahe pagbabalanse ng mga network at snubber circuits. The SMB (DO-214AA) overmolded package features industry-standard form factor for surface mount assemblies.

“These product offerings come from years of sustained development efforts at GeneSiC towards offering compelling devices and packages. We believe the SMB form factor is a key differentiator for the Micro Solar Inverter and Voltage Multiplier market, at payagan ang makabuluhang mga benepisyo sa aming mga customer. GeneSic's mababang VF, low capacitance SiC Schottky Rectifiers and improved SMB packages enables this breakthrough product” sinabi Dr. rantso singh, Pangulo ng GeneSic Semiconductor.

1200 V/2 A SMB SiC Schottky Diode (GB02SLT12-214) Technical Highlights

  • Typical VF = 1.5 V
  • Tjmax = 175oC
  • Reverse Recover Charge = 14 nC.

3300 V/0.3 A SMB SiC Schottky Diode (GAP3SLT33-214) Technical Highlights

  • Typical VF = 1.7 V
  • Tjmax = 175oC
  • Reverse Recover Charge = 52 nC.

650 V/1 A SMB SiC Schottky Diode (GB01SLT06-214) Technical Highlights

  • Typical VF = 1.5 V
  • Tjmax = 175oC
  • Reverse Recover Charge = 7 nC.

Lahat ng device ay 100% sinubukan sa buong boltahe / kasalukuyang mga rating at bahay sa Halogen-Free, RoHS compliant SMB (DO-214AA) mga pakete. Ang mga teknikal na Suporta at mga modelo ng circuit ng SPICE ay inaalok. Ang mga aparato ay agad na magagamit mula sa GeneSiC's Authorized Distributors.

Tungkol sa GeneSic Semiconductor Inc.

GeneSiC Semiconductor Inc. ay isang nangungunang makabagong-likha sa mataas na temperatura, mataas na kapangyarihan at ultra-mataas na boltahe silicon carbide (Sic) mga kagamitan, at global supplier ng isang malawak na hanay ng mga kapangyarihan semiconductors. Nito portfolio ng mga device ay kinabibilangan ng SiC-based na rectifier, transistor, at mga produkto ng thyristor, pati na rin silicon rectifier produkto. GeneSiC ay bumuo ng malawakang intelektwal na ari-arian at teknikal na kaalaman na sumasakop sa pinakabagong mga advanced sa Sic power device, na may mga produkto target patungo sa alternatibong enerhiya, automotive, down ng langis pagmamaneho, kontrol ng motor, kapangyarihan supply, transportasyon, at hindi mapipigilan ang mga aplikasyon ng kapangyarihan. GeneSiC ay nakakuha ng maraming pananaliksik at pag-unlad kontrata mula sa mga ahensya ng GOBYERNO, kabilang ang ARPA-E, Kagawaran ng Enerhiya, navy, Hukbo, DARPA, DTRA, at ang Department of Homeland Security, pati na rin ang mga pangunahing kontratista ng pamahalaan. Sa 2011, ang kumpanya napanalunan ang prestihiyoso R&D100 award para sa commercializing ultra-mataas na boltahe Sic Thyristors.

Para sa karagdagang impormasyon, bisitahin nyo na lang ang http://192.168.88.14/index.php/sic-products/schottky

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Silicon Carbide Schotky Rectifier pinalawig sa 3300 Bolta marka

Mataas na Voltage assemblies upang makinabang mula sa mga mababang kapasidad rectifiers nag-aalok ng temperatura-independiyenteng zero reverse kasalukuyang sa nakahiwalay na mga pakete

Thief River Falls /Dulles, Virginia., Mayo 28, 2013 — GeneSiC Semiconductor, isang pioneer at pandaigdigang supplier ng malawak na hanay ng Silicon Carbide (Sic) kapangyarihan semiconductors ipahayag ang agarang availability ng 3300 V/0.3 Ampere Sic Schotky Rectifiers – ang GAP3SLT33-220FP. Ang natatanging produktong ito ay kumakatawan sa pinakamataas na boltahe SiC rectifier sa merkado, at ay partikular na target patungo sa boltahe multiplier circuits at mataas na boltahe assemblies na ginagamit sa isang malawak na hanay ng X-Ray, Laser at particle generator kapangyarihan supplies.3300 V Sic Schotky diode GeneSiC

Kontemporaryo boltahe multiplier circuits magdusa mula sa mababang circuit kahusayan at malalaking sukat dahil ang reverse pagbawi kasalukuyang mula sa Silicon rectifiers discharge ang kahilera konektado capacitors. Sa mas mataas na rectifier temperatura ng junction, sitwasyon na ito ay nagiging mas masahol pa dahil ang reverse pagbawi kasalukuyang sa Silicon rectifiers ay nagdaragdag sa temperatura. Sa thermally contraints mataas na boltahe assemblies, junction temperatura tumaas lubos madali kahit na kapag disente kasalukuyang ay lumipas. Mataas na Boltahe SiC rectifiers nag-aalok ng natatanging mga katangian na pangako upang maisakatuparan ang mataas na boltahe assemblies. GeneSiC ni 3300 V/0.3 Isang Schotky rectifiers tampok zero reverse pagbawi kasalukuyang na hindi nagbabago sa temperatura. Ito relatibong mataas na boltahe sa isang solong aparato ay nagbibigay-daan sa isang pagbabawas sa mga yugto ng multiplikasyon na kinakailangan sa karaniwang mataas na boltahe generator circuits, sa pamamagitan ng paggamit ng mas mataas na AC input boltahe. Ang malapit-ideal na paglipat ng mga katangian ay nagbibigay-daan sa pag-aalis / dramatic pagbabawas ng boltahe pagbabalanse ng mga network at snubber circuits. Ang TO-220 Buong Pack overmolded pakete tampok industriya-standard form na may nadagdagan pin spacing sa pamamagitan ng butas assemblies.3300 V Sic Schotky diode SMB GeneSiC

"Ang produktong ito ay nagmumula sa taon ng patuloy na pagsisikap sa GeneSiC. Naniniwala kami sa 3300 V rating ay isang susi iba't-ibang para sa mataas na boltahe generator merkado, at payagan ang makabuluhang mga benepisyo sa aming mga customer. GeneSic's mababang VF, mababang kapasidad Sic Schotky Rectifiers ay nagbibigay-kakayahan sa break na ito produkto” sinabi Dr. rantso singh, Pangulo ng GeneSic Semiconductor.

3300 V/0.3 Isang Sic Rectifier Technical Highlight

  • On-state Drop ng 1.7 V sa 0.3 A
  • Positibong temperatura kape sa VF
  • Tjmax = 175oC
  • Capacitive singil 52 nC (karaniwang).

Lahat ng device ay 100% sinubukan sa buong boltahe / kasalukuyang mga rating at bahay sa Halogen-Free, RohS komplikadong industriya-standard to-220FP (Buong Pack) mga pakete. Ang mga device ay agad makukuha mula sa Awtorisadong Distributor ng GeneSic, digikey.

Tungkol sa GeneSic Semiconductor Inc.

GeneSiC Semiconductor Inc. ay isang nangungunang makabagong-likha sa mataas na temperatura, mataas na kapangyarihan at ultra-mataas na boltahe silicon carbide (Sic) mga kagamitan, at global supplier ng isang malawak na hanay ng mga kapangyarihan semiconductors. Nito portfolio ng mga device ay kinabibilangan ng SiC-based na rectifier, transistor, at mga produkto ng thyristor, pati na rin silicon rectifier produkto. GeneSiC ay bumuo ng malawakang intelektwal na ari-arian at teknikal na kaalaman na sumasakop sa pinakabagong mga advanced sa Sic power device, na may mga produkto target patungo sa alternatibong enerhiya, automotive, down ng langis pagmamaneho, kontrol ng motor, kapangyarihan supply, transportasyon, at hindi mapipigilan ang mga aplikasyon ng kapangyarihan. GeneSiC ay nakakuha ng maraming pananaliksik at pag-unlad kontrata mula sa mga ahensya ng GOBYERNO, kabilang ang ARPA-E, Kagawaran ng Enerhiya, navy, Hukbo, DARPA, DTRA, at ang Department of Homeland Security, pati na rin ang mga pangunahing kontratista ng pamahalaan. Sa 2011, ang kumpanya napanalunan ang prestihiyoso R&D100 award para sa commercializing ultra-mataas na boltahe Sic Thyristors.

Para sa karagdagang impormasyon, mangyaring bisitahin ang www.genesicsemi.com

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Silicon Carbide Barey mamatay hanggang sa 8000 V Ratings mula sa Genesic

Mataas na Voltage circuits at assemblies upang makinabang mula sa SiC chips na nag-aalok ng walang katulad na boltahe ratings at ultra-mataas na bilis paglipat

Dulles, Virginia., Nobyembre 7, 2013 — GeneSiC Semiconductor, isang pioneer at pandaigdigang supplier ng malawak na hanay ng Silicon Carbide (Sic) kapangyarihan semiconductors ipahayag ang agarang availability ng 8000 V Sic Pin rectifier; 8000 V Sic Schotky Rectifier, 3300 V Sic Schotky Rectifier at 6500 V Sic Thyristors sa mamatay format. Ang mga natatanging produktong ito ay kumakatawan sa pinakamataas na boltahe SiC device sa merkado, at ay partikular na target patungo sa langis at gas instrumento, boltahe multiplier circuits at mataas na boltahe assemblies.

Contemporary ultra-mataas na boltahe circuits magdusa mula sa mababang circuit kahusayan at malalaking sukat dahil ang reverse pagbawi kasalukuyang mula sa Silicon rectifiers discharge ang kahilera konektado capacitors. Sa mas mataas na rectifier temperatura ng junction, sitwasyon na ito worsens karagdagang dahil ang reverse pagbawi kasalukuyang sa Silicon rectifiers ay nagdaragdag sa temperatura. Sa thermally contraints mataas na boltahe assemblies, junction temperatura tumaas lubos madali kahit na kapag disente kasalukuyang ay lumipas. Mataas na Boltahe SiC rectifiers nag-aalok ng natatanging mga katangian na pangako upang maisakatuparan ang mataas na boltahe assemblies. GeneSiC ni 8000 V at 3300 V Schotky rectifiers tampok zero reverse pagbawi kasalukuyang na hindi baguhin sa temperatura. Ito relatibong mataas na boltahe sa isang solong aparato ay nagbibigay-daan sa isang pagbabawas sa mga yugto ng multiplikasyon na kinakailangan sa karaniwang mataas na boltahe generator circuits, sa pamamagitan ng paggamit ng mas mataas na AC input boltahe. Ang malapit-ideal na paglipat ng mga katangian ay nagbibigay-daan sa pag-aalis / dramatic pagbabawas ng boltahe pagbabalanse ng mga network at snubber circuits. 8000 V PiN Rectifiers nag-aalok ng mas mataas na kasalukuyang mga antas at mas mataas na operating temperatura. 6500 V Sic Thyristor chips ay magagamit din upang pabilisin R&D ng mga bagong sistema.

"Ang mga produktong ito ay nagpapakita ng malakas na humantong sa pagbuo ng SiC chips sa multi-kV ratings. Naniniwala kami sa 8000 V rating napupunta higit pa sa kung ano ang Silicon aparato ay maaaring mag-alok sa rate temperatura, at payagan ang makabuluhang mga benepisyo sa aming mga customer. GeneSic's mababang VF, mababang kapasidad SiC Rectifier at Thyristors ay paganahin ang mga benepisyo ng sistema hindi posible bago” sinabi Dr. rantso singh, Pangulo ng GeneSic Semiconductor.

8000 V/2 Isang Sic Baree Die Pin Rectifier Technical Highlight

  • Tjmax = 210oC
  • Baligtandang Leakage Kasalukuyang < 50 uA sa 175oC
  • Reverse Recovery Charge 558 nC (karaniwang).

8000 V/50 mA SiC Bare Die Schotky Rectifier Technical Highlight

  • Kabuuang Capacitance 25 pF (karaniwang, sa -1 V, 25oC).
  • Positibong temperatura kape sa VF
  • Tjmax = 175oC

6500 V SiC Thyristor Bare Die Technical Highlights

  • Tatlong handog – 80 Amperes (GA080TH65-CAU); 60 Amperes (GA060TH65-CAU); at 40 Amperes (GA040TH65-CAU)
  • Tjmax = 200oC

3300 V/0.3 Isang Sic Bare Die Rectifier Technical Highlight

  • On-state Drop ng 1.7 V sa 0.3 A
  • Positibong temperatura kape sa VF
  • Tjmax = 175oC
  • Capacitive singil 52 nC (karaniwang).

Tungkol sa GeneSic Semiconductor Inc.

GeneSiC Semiconductor Inc. ay isang nangungunang makabagong-likha sa mataas na temperatura, mataas na kapangyarihan at ultra-mataas na boltahe silicon carbide (Sic) mga kagamitan, at global supplier ng isang malawak na hanay ng mga kapangyarihan semiconductors. Nito portfolio ng mga device ay kinabibilangan ng SiC-based na rectifier, transistor, at mga produkto ng thyristor, pati na rin silicon rectifier produkto. GeneSiC ay bumuo ng malawakang intelektwal na ari-arian at teknikal na kaalaman na sumasakop sa pinakabagong mga advanced sa Sic power device, na may mga produkto target patungo sa alternatibong enerhiya, automotive, down ng langis pagmamaneho, kontrol ng motor, kapangyarihan supply, transportasyon, at hindi mapipigilan ang mga aplikasyon ng kapangyarihan. GeneSiC ay nakakuha ng maraming pananaliksik at pag-unlad kontrata mula sa mga ahensya ng GOBYERNO, kabilang ang ARPA-E, Kagawaran ng Enerhiya, navy, Hukbo, DARPA, DTRA, at ang Department of Homeland Security, pati na rin ang mga pangunahing kontratista ng pamahalaan. Sa 2011, ang kumpanya napanalunan ang prestihiyoso R&D100 award para sa commercializing ultra-mataas na boltahe Sic Thyristors.

Para sa karagdagang impormasyon, bisitahin mo na lang http://192.168.88.14/index.php/hit-sic/baredie

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Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC enables 175°C operation

Dulles, Virginia., Marso 5, 2013 — GeneSiC Semiconductor, isang pioneer at pandaigdigang supplier ng malawak na hanay ng Silicon Carbide (Sic) power semiconductors today announces the immediate availability of its second generation hybrid mini-modules using 1200 V/100 Amperes SiC Schottky Rectifiers with rugged Silicon IGBTs – the GB100XCP12-227. The performance-price point at which this product is being released allows many power conversion applications to benefit from the reduction of the cost/size/weight/volume that neither Silicon IGBT/ Silicon Rectifier solution, nor a pure SiC Module can offer. These devices are targeted for use in a wide variety of applications including industrial motors, Solar Inverters, specialized equipment and power grid applications.

SiC Schottky/Si IGBT mini-modules (Co-packs) offered by GeneSiC are made with Si IGBTs that exhibit positive temperature coefficient of on-state drop, robust punchthrough design, high temperature operation and fast switching characteristics that are capable of being driven by commercial, karaniwang magagamit 15 V IGBT gate driver. The SiC rectifiers used in these Co-pack modules allow extremely low inductance packages, low on-state voltage drop and no reverse recovery. The SOT-227 package offers isolated baseplate, 12mm low profile design that can be used very flexibly as a standalone circuit element, high current paralleled configuration, a Phase Leg (two modules), or as a chopper circuit element.

“We listened to our key customers since the initial offering of this product almost 2 years back. This second generation 1200 V/100 A Co-pack product has a low inductance design that is suitable for high frequency, high temperature applications. The poor high temperature and reverse recovery characteristics of Silicon diodes critically limits the use of IGBTs at higher temperatures. GeneSic's mababang VF, low capacitance SiC Schottky Diodes enable this breakthrough product” sinabi Dr. rantso singh, Pangulo ng GeneSic Semiconductor.

1200 V/100 A Si IGBT/SiC Rectifier Technical Highlights

  • On-state Drop ng 1.9 V sa 100 A
  • Positibong temperatura kape sa VF
  • Tjmax = 175°C
  • Turn-On Energy Losses 23 microJoules (karaniwang).

Lahat ng device ay 100% sinubukan sa buong boltahe / kasalukuyang mga rating at bahay sa Halogen-Free, RoHS compliant industry-standard SOT-227 packages. Ang mga aparato ay agad na magagamit mula sa GeneSiC's Authorized Distributors.

Tungkol sa GeneSic Semiconductor Inc.

GeneSiC Semiconductor Inc. ay isang nangungunang makabagong-likha sa mataas na temperatura, mataas na kapangyarihan at ultra-mataas na boltahe silicon carbide (Sic) mga kagamitan, at global supplier ng isang malawak na hanay ng mga kapangyarihan semiconductors. Nito portfolio ng mga device ay kinabibilangan ng SiC-based na rectifier, transistor, at mga produkto ng thyristor, pati na rin silicon rectifier produkto. GeneSiC ay bumuo ng malawakang intelektwal na ari-arian at teknikal na kaalaman na sumasakop sa pinakabagong mga advanced sa Sic power device, na may mga produkto target patungo sa alternatibong enerhiya, automotive, down ng langis pagmamaneho, kontrol ng motor, kapangyarihan supply, transportasyon, at hindi mapipigilan ang mga aplikasyon ng kapangyarihan. GeneSiC ay nakakuha ng maraming pananaliksik at pag-unlad kontrata mula sa mga ahensya ng GOBYERNO, kabilang ang ARPA-E, Kagawaran ng Enerhiya, navy, Hukbo, DARPA, DTRA, at ang Department of Homeland Security, pati na rin ang mga pangunahing kontratista ng pamahalaan. Sa 2011, ang kumpanya napanalunan ang prestihiyoso R&D100 award para sa commercializing ultra-mataas na boltahe Sic Thyristors.

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GeneSiC introduces Silicon Carbide Junction Transistors

DULLES, Va., Feb. 25, 2013 /PRNewswire-iReach/ — GeneSiC Semiconductor, isang pioneer at pandaigdigang supplier ng malawak na hanay ng Silicon Carbide (Sic) power semiconductors today announces the immediate availability of a family of 1700V and 1200 V SiC Junction Transistors. Incorporating high voltage, high frequency and high-temperature capable SiC Junction Transistors will increase conversion efficiency and reduce the size/weight/volume of power electronics. These devices are targeted for use in a wide variety of applications including server, Mga supply ng kuryente sa telecom at networking, Suplay ng kuryente walang tigil, Solar Inverters, industrial motor control systems, and downhole applications.

Ang mga Junction Transistor na inaalok ng GeneSiC ay nagpapakita ng napakabilis na kakayahan sa paglipat, isang square reverse biased safe operation area (RBSOA), pati na rin ang temperatura-independent lumilipas na enerhiya pagkawala at paglipat ng mga oras. Ang mga switch na ito ay walang gate oxide, normal na off, magpakita ng positibong temperatura koepisyente ng on-resistance, at may kakayahang magmaneho ng komersyal, karaniwang magagamit 15 V IGBT gate driver, di tulad ng ibang SiC switch. Habang nag-aalok ng pagiging tugma sa SiC JFET driver, Junction Transistors can be easily paralleled because of their matching transient characteristics.

“As power system designers continue to push the limits of operating frequency, habang hinihingi pa rin ang mga high circuit efficiency, the need SiC switches which can offer a standard of performance and production uniformity. Paggamit ng natatanging aparato at gawa gawa makabagong ideya, GeneSiC’s Transistor products help designers achieve all that in a more robust solution,” sinabi Dr. rantso singh , Pangulo ng GeneSic Semiconductor.

1700 V Junction Transistor Technical Highlights

  • Tatlong handog – 110 mOhms (GA16JT17-247); 250 mOhms (GA08JT17-247); at 500 mOhms (GA04JT17-247)
  • Tjmax = 175°C
  • Turn On/Off Rise/Fall Times <50 nanoseconds tipikal.

1200 V Junction Transistor Technical Highlights

  • Two offerings – 220 mOhms (GA06JT12-247); at 460 mOhms (GA03JT12-247)
  • Tjmax = 175°C
  • Turn On/Off Rise/Fall Times <50 nanoseconds tipikal

Lahat ng device ay 100% sinubukan sa buong boltahe / kasalukuyang mga rating at bahay sa Halogen-Free, RoHS compliant TO-247 na mga pakete. Ang mga aparato ay agad na magagamit mula sa GeneSiC's Authorized Distributors.

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New Physics Lets Thyristor Reach Higher Level

Aug 30, 2011 – Dulles, VA – New Physics Lets Thyristors Reach Higher Level

An electric power grid supplies reliable power with the help of electronic devices that ensure smooth, reliable power flow. Until now, silicon-based assemblies have been relied upon, but they have been unable to handle the requirements of the smart grid. Wide-band-gap materials such as silicon carbide (Sic) offer a better alternative as they are capable of higher switching speeds, a higher breakdown voltage, lower switching losses, and a higher junction temperature than traditional silicon-based switches. The first such SiC-based device to reach market is the Ultra-high-voltage Silicon Carbide Thyristor (SiC Thyristor), developed by GeneSiC Semiconductor Inc., Dulles, Va., with support from Sandia National Laboratories, Albuquerque, N.M., the U.S. Department of Energy/Electricity Delivery, and the U.S. Army/Armament Research, Development and Engineering Center, Picatinny Arsenal, N.J.

The developers adopted a different operational physics for this device, which operates on minority carrier transportation and an integrated third terminal rectifier, which is one more than other commercial SiC devices. Developers adopted a new fabrication technique that supports ratings above 6,500 V, as well as a new gate-anode design for high-current devices. Capable of performing at temperatures up to 300 C and current at 80 A, the SiC Thyristor offers up to 10 times higher voltage, four times higher blocking voltages, at 100 times faster switching frequency than silicon-based thyristors.

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GeneSiC wagi sa prestihiyosong R&D100 Award for SiC Devices in Grid-connected Solar and Wind Energy Applications

DULLES, VA, July 14, 2011 — R&D Magazine ay pinili GeneSiC Semiconductor Inc. ng mga Dulles, VA bilang tatanggap ng prestihiyosong 2011 R&D 100 Award for the commercialization of Silicon Carbide devices with high voltage ratings.

GeneSiC Semiconductor Inc, a key innovator in the Silicon Carbide based power devices was honored last week with the announcement that it has been awarded the prestigious 2011 R&D 100 Gawad. Kinikilala ng award na ito ang GeneSiC para sa pagpapakilala ng isa sa mga pinakamahalagang, bagong ipinakilala pananaliksik at pag unlad advances sa maramihang mga disiplina sa panahon ng 2010. R&D Magazine recognized GeneSiC’s Ultra-High Voltage SiC Thyristor for its ability to achieve blocking voltages and frequencies never utilized before towards power electronics demonstrations. The voltage ratings of >6.5kV, on-state current rating of 80 A and operating frequencies of >5 kHz are much higher than those previously introduced in the marketplace. These capabilities achieved by GeneSiC’s Thyristors critically enable power electronics researchers to develop grid-tied inverters, Flexible

AC Transmission Systems (FACTS) and High Voltage DC Systems (HVDC). This will allow new inventions and product developments within renewable energy, Solar Inverters, wind power inverters, and energy storage industries. Dr. rantso singh, President of GeneSiC Semiconductor comented “It is anticipated that large-scale markets in solid-state electrical substations and wind turbine generators will open up after researchers in the power conversion arena will fully realize the benefits of SiC Thyristors. These first generation SiC Thyristors utilize the lowest demonstrated on-state voltage drop and differential on-resistances ever achieved in SiC Thyristors. We intend to release future generations of SiC Thyristors optimized for Gate-controlled Turn Off capability and pulsed power capability and >10kV ratings. As we continue to develop high temperature ultra-high voltage packaging solutions, the present 6.5kV Thyristors are packaged in modules with fully soldered contacts, limited to 150oC junction temperatures.” Since this product was launched in October 2010, GeneSiC has booked orders from multiple customers towards demonstration of advanced power electronics hardware using these Silicon Carbide Thyristors. GeneSiC continues to develop its family of Silicon Carbide Thyristor products. Ang R&D on early version for power conversion applications were developed through SBIR funding support from US Dept. of Energy. More advanced, Pulsed Power optimized SiC Thyristors are being developed under another SBIR contract with ARDEC, US Army. Using these technical developments, internal investment from GeneSiC and commercial orders from multiple customers, GeneSiC was able to offer these UHV Thyristors as commercial products.

The 49th annual technology competition run by R&D Magazine sinuri ang mga entry mula sa iba't ibang mga kumpanya at mga manlalaro ng industriya, mga organisasyon ng pananaliksik at unibersidad sa buong mundo. Ang mga editor ng magasin at isang panel ng mga eksperto sa labas ay nagsilbing mga hukom, pagsusuri sa bawat entry sa mga tuntunin ng kahalagahan nito sa mundo ng agham at pananaliksik.

Ayon kay R&D Magasin, panalo ng isang R&D 100 Award ay nagbibigay ng isang marka ng kahusayan na kilala sa industriya, pamahalaan, at akademya bilang patunay na ang produkto ay isa sa mga pinaka makabagong ideya ng taon. Kinikilala ng award na ito ang GeneSiC bilang isang pandaigdigang lider sa paglikha ng mga produktong nakabatay sa teknolohiya na gumagawa ng pagkakaiba sa kung paano tayo nagtatrabaho at nabubuhay.

Tungkol sa GeneSiC Semiconductor, Inc.

GeneSiC ay isang mabilis na lumilitaw innovator sa lugar ng Sic power aparato at may isang malakas na katapatan sa pagbuo ng Silicon Carbide (Sic) batay na mga kagamitan para sa: (a) HV-HF Sic aparato para sa Power Grid, Pulsed kapangyarihan at Direktang Enerhiya Armas; at (b) Mataas na temperatura Sic power aparato para sa mga aktwal na sasakyang panghimpapawid at langis paggalugad. GeneSiC Semiconductor Inc. develops Silicon Carbide (Sic) batay sa semiconductor aparato para sa mataas na temperatura, radiation, at kapangyarihan grid application. Kabilang dito ang pagbuo ng mga rectifier, MGA FET, bipolar aparato pati na rin ang particle & photonic detector. GeneSiC ay may access sa isang malawak na suite ng semiconductor disenyo, tela, katangian at pagsusuri ng mga pasilidad para sa mga tulad device. GeneSiC capitalizes sa kanyang pangunahing kahusayan sa aparato at proseso disenyo upang bumuo ng ang pinakamahusay na posibleng Sic device para sa kanyang mga customer. Ang kumpanya ay nakikilala mismo sa pamamagitan ng pagbibigay ng mataas na kalidad ng mga produkto na partikular na tinedyer sa mga kinakailangan ng bawat customer. GeneSiC ay may prime/sub-kontrata mula sa mga pangunahing ahensya ng GOBYERNO kabilang ang ARPA-E, US Dept ng Enerhiya, navy, DARPA, Dept ng Homeland Security, Dept ng Commerce at iba pang mga departamento sa loob ng US Dept. ng pagtatanggol. GeneSiC ay patuloy na mabilis na mapahusay ang mga kagamitan at tauhan imprastraktura sa kanyang Dulles, Virginia pasilidad. Ang kumpanya ay agresibong pagkuha tauhan na karanasan sa compound semiconductor aparato tela, semiconductor pagsubok at detector disenyo. Karagdagang impormasyon tungkol sa kumpanya at mga produkto nito ay maaaring makuha sa pamamagitan ng pagtawag GeneSiC sa 703-996-8200 o sa pamamagitan ng pagbisita www.genesicsemi.com.

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GeneSiC Semiconductor Selected to Showcase Technology at 2011ARPA-E Energy Innovation Summit

Feb 28, 2011 – Dulles, VA – GeneSiC Semiconductor is excited to announce its selection for the prestigious Technology Showcase at the ARPA-E Energy Innovation Summit, co-hosted by the Department of Energy’s Advanced Research Projects Agency – Energy (ARPA-E) and the Clean Technology and Sustainable Industries Organization (CTSI). Hundreds of top technologists and cutting-edge clean tech organizations competed to participate in the Showcase, a hallway of America’s most promising prospects for winning the future in energy.

As one of ARPA-E’s selected organizations, GeneSiC Semiconductor will exhibit its Silicon Carbide to nearly 2,000 national leaders gathering to drive long-term American competitiveness in the energy sector, including top researchers, investors, entrepreneurs, corporate executives and government officials. More than 200 groundbreaking technologies from ARPA-E awardees, corporations, National Labs and Department of Energy R&D programs will be featured at the event.

“This Summit brings together organizations that understand the need to collaborate and partner to bring the next generation of energy technologies to market,” said GeneSiC Semiconductor, Pangulo, Dr. rantso singh. “It’s a rare and exciting opportunity to have so many key players in the energy community together under one roof and we look forward to sharing our Silicon Carbide Power Devices with other innovators and investors at the Technology Showcase.”

Research and business development teams from 14 Corporate Acceleration Partners committed to technology commercialization will also be present including Dow, Bosch, Applied Materials and Lockheed Martin.

The Summit also features high-profile speakers including U.S. Energy Secretary Steven Chu, ARPA-E Director Arun Majumdar, U.S. Navy Secretary Raymond Mabus, former California Governor Arnold Schwarzenegger and Bank of America Chairman Charles Holliday.

The second annual ARPA-E Energy Innovation Summit will take place February 28 – Marso 2, 2011 at the Gaylord Convention Center just outside Washington, D.C. To learn more or to register please visit: www.ct-si.org/events/EnergyInnovation.

Tungkol sa GeneSiC Semiconductor

GeneSiC Semiconductor Inc. develops widebandgap semiconductor devices for high temperature, radiation, at kapangyarihan grid application. Kabilang dito ang pagbuo ng mga rectifier, power switches and bipolar devices. GeneSiC uses a unique and extensive suite of semiconductor design, tela, katangian at pagsusuri ng mga pasilidad para sa mga tulad device. GeneSiC capitalizes sa kanyang pangunahing kahusayan sa aparato at proseso disenyo upang bumuo ng ang pinakamahusay na posibleng Sic device para sa kanyang mga customer. The company distinguishes itself by providing high quality products for a wide range of high volume markets. GeneSiC ay may prime/sub-kontrata mula sa mga pangunahing ahensya ng GOBYERNO kabilang ang ARPA-E, US Dept ng Enerhiya, navy, Hukbo, NASA, DARPA, Dept ng Homeland Security, Dept ng Commerce at iba pang mga departamento sa loob ng US Dept. ng pagtatanggol.

About ARPA-E

The Advanced Research Projects Agency – Energy (ARPA-E) is a new agency within the U.S. Department of Energy – and the first to focus exclusively on breakthrough energy technologies that could radically change the way we use energy. Rather than performing research directly, ARPA-E invests in high-risk, high-reward energy technologies being developed by universities, startups, small businesses, and corporations. Our staff combines industry-leading scientists, engineers, and investment executives to identify promising solutions to the nation’s most critical energy problems and to fast-track top technologies towards the marketplace – which is critical to securing the nation’s global technology leadership and creating new American industries and jobs. Visit www.arpa-e.energy.govfor more information.

About CTSI

The Clean Technology & Sustainable Industries Organization (CTSI), a 501c6 non-profit industry association, represents the organizations developing, commercializing, and implementing energy, water, and environmental technologies. Clean technologies offer much needed solutions to growing resource security and sustainability concerns and are critical to maintaining economic competitiveness. CTSI brings together global leaders for advocacy, community development, networking, and information sharing to help bring these needed technologies to market more rapidly. Visit www.ct-si.org for more information.

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GeneSiC wins power management project from NASA in support of future Venus exploration missions

Disyembre 14, 2010 – GeneSiC Semiconductor Inc., a key innovator of novel Silicon Carbide (Sic) devices for high temperature, high power, and ultra-high voltage applications, announces selection of its project titled “Integrated SiC Super Junction Transistor-Diode Devices for high-power motor control modules operating at 500 oC” by the US National Aeronautics and Space Administration (NASA) for a Phase I SBIR award. This SBIR project is focused on the development of Monolithic Integrated SiC JBS diode-Super Junction Transistor (MIDSJT) devices for operation under Venus-like ambients (500 °C surface temperatures). The SiC MIDSJT devices developed in this program will be used to construct motor control power modules for direct integration with Venus exploration rovers.

“We are pleased with the confidence expressed by NASA in our high temperature SiC device solutions. This project will enable GeneSiC to develop industry-leading SiC-based power management technologies through its innovative device and packaging solutions” sinabi Dr. Siddarth Sundaresan, GeneSiC’s Director of Technology. “The SiC MIDSJT devices targeted in this program will allow Kilowatt-level power to be handled with digital precision at temperatures as high as 500 °C. In addition to outer space applications, this novel technology has the potential to revolutionize critical aerospace and geothermal oil drilling hardware requiring ambient temperatures in excess of 200 °C. These application areas are currently limited by the poor high-temperature performance of contemporary Silicon and even SiC based device technologies such as JFETs and MOSFETs” he added.

GeneSiC ay patuloy na mabilis na mapahusay ang mga kagamitan at tauhan imprastraktura sa kanyang Dulles, Virginia pasilidad. Ang kumpanya ay agresibong pagkuha tauhan na karanasan sa compound semiconductor aparato tela, semiconductor pagsubok at detector disenyo. Karagdagang impormasyon tungkol sa kumpanya at mga produkto nito ay maaaring makuha sa pamamagitan ng pagtawag GeneSiC sa 703-996-8200 o sa pamamagitan ng pagbisita www.genesicsemi.com.

Tungkol sa GeneSiC Semiconductor, Inc.

GeneSiC Semiconductor Inc. develops Silicon Carbide (Sic) batay sa semiconductor aparato para sa mataas na temperatura, radiation, at kapangyarihan grid application. Kabilang dito ang pagbuo ng mga rectifier, MGA FET, bipolar aparato pati na rin ang particle & photonic detector. GeneSiC ay may access sa isang malawak na suite ng semiconductor disenyo, tela, katangian at pagsusuri ng mga pasilidad para sa mga tulad device. GeneSiC capitalizes sa kanyang pangunahing kahusayan sa aparato at proseso disenyo upang bumuo ng ang pinakamahusay na posibleng Sic device para sa kanyang mga customer. Ang kumpanya ay nakikilala mismo sa pamamagitan ng pagbibigay ng mataas na kalidad ng mga produkto na partikular na tinedyer sa mga kinakailangan ng bawat customer. GeneSiC ay may prime/sub-kontrata mula sa mga pangunahing ahensya ng GOBYERNO kabilang ang ARPA-E, US Dept ng Enerhiya, navy, DARPA, Dept ng Homeland Security, Dept ng Commerce at iba pang mga departamento sa loob ng US Dept. ng pagtatanggol.

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Multi-kHz, Ultra-High Voltage Silicon Carbide Thyristors sampled to US Researchers

DULLES, VA, Nobyembre. 1, 2010 –In a first of its kind offering, GeneSiC Semiconductor announces the availability of a family of 6.5kV SCR-mode Silicon Carbide Thyristors for use in power electronics for Smart Grid applications. Revolutionary performance advantages of these power devices are expected to spur key innovations in utility-scale power electronics hardware to increase the accessibility and exploitation of Distributed Energy Resources (DER). “Until now, multi-kV Silicon Carbide (Sic) power devices were not openly available to US researchers to fully exploit the well-known advantages– namely 2-10kHz operating frequencies at 5-15kV ratings – of SiC-based power devices.” commented Dr. rantso singh, President of GeneSiC. “GeneSiC has recently completed delivery of many 6.5kV/40A, 6.5kV/60A and 6.5kV/80A Thyristors to multiple customers conducting research in renewable energy, Army and Naval power system applications. SiC devices with these ratings are now being offered more widely.”

Silicon Carbide based Thyristors offer 10X higher voltage, 100X faster switching frequencies and higher temperature operation as compared to conventional Silicon-based Thyristors. Targeted applications research opportunities for these devices include general purpose medium voltage power conversion (MVDC), Grid-tied solar inverters, wind power inverters, pulsed power, weapon systems, ignition control, and trigger control. It is now well established that ultra-high voltage (>10kV) Silicon Carbide (Sic) device technology will play a revolutionary role in the next-generation utility grid. Thyristor-based SiC devices offer the highest on-state performance for >5 kV devices, and are widely applicable towards medium voltage power conversion circuits like Fault-Current Limiters, AC-DC converters, Static VAR compensators and Series Compensators. SiC based Thyristors also offer the best chance of early adoption due to their similarities to conventional power grid elements. Deploying these advanced power semiconductor technologies could provide as much as a 25-30 percent reduction in electricity consumption through increased efficiencies in delivery of electrical power.

Dr. Singh continues “It is anticipated that large-scale markets in solid-state electrical substations and wind turbine generators will open up after researchers in the power conversion arena will fully realize the benefits of SiC Thyristors. These first generation SiC Thyristors utilize the lowest demonstrated on-state voltage drop and differential on-resistances ever achieved in SiC Thyristors. We intend to release future generations of SiC Thyristors optimized for Gate-controlled Turn Off capability and >10kV ratings. As we continue to develop high temperature ultra-high voltage packaging solutions, the present 6.5kV Thyristors are packaged in modules with fully soldered contacts, limited to 150oC junction temperatures.” GeneSiC is a fast emerging innovator in the area of SiC power devices and has a strong commitment to the development of Silicon Carbide (Sic) batay na mga kagamitan para sa: (a) HV-HF Sic aparato para sa Power Grid, Pulsed kapangyarihan at Direktang Enerhiya Armas; at (b) Mataas na temperatura Sic power aparato para sa mga aktwal na sasakyang panghimpapawid at langis paggalugad.

Located near Washington, DC in Dulles, Virginia, GeneSiC Semiconductor Inc. ay isang nangungunang makabagong-likha sa mataas na temperatura, high-power and ultra high-voltage silicon carbide (Sic) mga kagamitan. Current development projects include high-temperature rectifiers, SuperJunction Transistors (SJT) and a wide variety of Thyristor based devices. GeneSiC has or has had prime/sub-contracts from major US Government agencies, including the Department of Energy, navy, Hukbo, DARPA, at ang Department of Homeland Security. The company is currently experiencing substantial growth, and hiring qualified personnel in power-device and detector design, tela, and testing. To find out more, bisitahin mo na lang www.genesicsemi.com.