Wysłany dnia Czerwiec 10, 2019Czerwiec 10, 2019Exploiting the high temperature promise of SiC luty, 2012 Exploiting the high temperature promise of SiC
Wysłany dnia Czerwiec 10, 2019Czerwiec 10, 2019Węglik krzemu “Super” Junction Transistors Operating at 500°C Apr, 2012 Węglik krzemu “Super” Junction Transistors Operating at 500°C
Wysłany dnia Czerwiec 10, 2019Czerwiec 10, 2019Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures Może, 2012 Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures
Wysłany dnia Czerwiec 10, 2019Czerwiec 10, 2019SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability Może, 2012 SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability
Wysłany dnia Czerwiec 10, 2019Czerwiec 10, 2019Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs Oct, 2012 Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs
Wysłany dnia Czerwiec 10, 2019Czerwiec 10, 201910 kV SiC BJTs – static, switching and reliability characteristics Może, 2013 10 kV SiC BJTs – static, switching and reliability characteristics
Wysłany dnia Czerwiec 10, 2019Czerwiec 10, 2019Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation Oct, 2013 Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation
Wysłany dnia Czerwiec 10, 2019Czerwiec 10, 2019Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation Apr, 2014 Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation
Wysłany dnia Czerwiec 10, 2019Czerwiec 10, 2019Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers Jun, 2014 Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers
Wysłany dnia Czerwiec 10, 2019Czerwiec 10, 2019AN-10A Driving SiC Junction Transistors (SJT) with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept Może 2013 AN-10A Driving SiC Junction Transistors (SJT) with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept