פורסם ב יוני 10, 2019יוני 10, 2019 על ידי עורך 0Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers Jun, 2014 Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers