פורסם ב יוני 10, 2019יוני 10, 2019 על ידי עורך 0200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications נובמבר, 2011 1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications