GeneSiC Semiconductor Awarded Multiple US Department of Energy SBIR and STTR Grants

DULLES, VA, Oct. 23, 2007 — GeneSiC Semiconductor Inc., a fast-rising innovator of high-temperature, high-power and ultra high-voltage silicon carbide (SiC) devices, announced that is has been awarded three separate small business grants from the US Department of Energy during FY07. The SBIR and STTR grants will be used by GeneSiC to demonstrate novel high-voltage SiC devices for a variety of energy storage, power grid, high-temperature and high-energy physics applications. Energy storage and power grid applications are receiving increasing attention as the world focuses on more efficient and cost-effective energy management solutions.

“We are pleased with the level of confidence expressed by various offices within the US Department on Energy with regard to our high-power device solutions. Injecting this funding into our advanced SiC technology programs will result in an industry-leading line SiC devices,” commented GeneSiC’s President, Dr. Ranbir Singh. “The devices being developed in these projects promise to provide critical enabling technology to support a more-efficient power grid, and will open the door to new commercial and military hardware technology that has remained unrealized due to the limitations of contemporary silicon-based technologies.”

The three projects include:

  • A new Phase I SBIR award focused on high current, multi-kV Thyristor-based devices geared towards energy storage applications.
  • A Phase II SBIR follow-on award for development of multi-kV SiC power devices for high voltage power supplies for high power RF system applications awarded by the DOE Office of Science.
  • A Phase I STTR award focused on optically gated high-voltage, high-frequency SiC power devices for environments rich in electro-magnetic interference, including high power RF energy systems, and directed energy weapon systems.

Along with the awards, GeneSiC has recently relocated operations to an expanded laboratory and office building in Dulles, Virginia, significantly upgrading its equipment, infrastructure and is in the process of adding additional key personnel.

“GeneSiC capitalizes on its core competency in device and process design to develop the best possible SiC devices for its customers, backing that up with access to an extensive suite of fabrication, characterization and testing facilities,” concluded Dr. Singh. “We feel those capabilities have been effectively validated by the US DOE with these new and follow-on awards.”

Additional information about the company and its products may be obtained by calling GeneSiC at 703-996-8200 or by visiting