High Temperature (>210oC) Junction Transistors and Rectifiers in small form factor metal can packages offer revolutionary performance benefits to a variety of applications including amplification, low noise circuitry and downhole actuator controls
DULLES, VA, March 9, 2015 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a line of compact, high temperature SiC Junction Transistors as well as a line of rectifiers in TO-46 metal can packages. These discrete components are designed and manufactured to operate under ambient temperatures of greater than 215oC. The use of high temperature, high voltage and low on-resistance capable SiC Transistors and Rectifiers will reduce the size/weight/volume of electronics applications requiring higher power handling at elevated temperatures. These devices are targeted for use in a wide variety of applications including a wide variety of downhole circuits, geothermal instrumentation, solenoid actuation, general purpose amplification, and switched mode power supplies.
High Temperature SiC Junction Transistors (SJT) offered by GeneSiC exhibit sub-10 nsec rise/falls times enabling >10 MHz switching as well as a square reverse biased safe operation area (RBSOA). The transient energy losses and switching times are independent of junction temperature. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by 0/+5 V TTL gate drivers, unlike other SiC switches. Unique advantages of the SJT in contrast to other SiC switches is its higher long term reliability, >20 usec short circuit capability, and superior avalanche capability. These devices can be used as efficient amplifiers as they promise a much higher linearity than any other SiC switch.
High Temperature SiC Schottky Rectifiers being offered by GeneSiC show low on-state voltage drops, and industry’s lowest leakage currents at elevated temperatures. With temperature independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are ideal candidates for use in high efficiency, high temperature circuits. The TO-46 metal can packages as well as the associated packaging processes used to create these products critically enable long term use where high reliability is critical.
“GeneSiC’s Transistor and Rectifier products are designed and manufactured from the grounds up to enable high temperature operation. These compact TO-46 packaged SJTs offer high current gains (>110), 0/+5 V TTL control, and robust performance. These devices offer low conduction losses and high linearity. We design our “SHT” line of rectifiers, to offer low leakage currents at high temperatures. These metal can packaged products augment our TO-257 and metal SMD products released last year to offer small form factor, vibration resistant solutions” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.
240 mOhm SiC Junction Transistors:
- 300 V blocking voltage. Part number GA05JT03-46
- 100 V blocking voltage. Part number GA05JT01-46
- Current Gain (hFE) >110
- Tjmax = 210oC
- Turn On/Off; Rise/Fall Times <10 nanoseconds typical.
Up to 4 Ampere High Temperature Schottky diodes:
- 600 V blocking voltage. Part number GB02SHT06-46
- 300 V blocking voltage. Part number GB02SHT03-46
- 100 V blocking voltage. Part number GB02SHT01-46
- Total capacitive charge 9 nC
- Tjmax = 210oC.
All devices are 100% tested to full voltage/current ratings and housed in metal can TO-46 packages. The devices are immediately available from GeneSiC’s Authorized Distributors.
About GeneSiC Semiconductor Inc.
GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon diode modules. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, downhole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.
For more information, please visit http://192.168.88.14/high-temperature-sic/high-temperature-sic-schottky-rectifiers/; and http://192.168.88.14/high-temperature-sic/high-temperature-sic-junction-transistors/.