Emerging Silicon-Carbide Power Devices Enable Revolutionary Changes in High Voltage Power Conversion
Reliability of SiC MOS devices
Reliability of SiC MOS devices
Novel SiC MOS-Bipolar Switches for >10 kV Applications
Reliability and performance limitations in SiC power device
Un DMOSFET de puissance 4H-SiC à grande surface de 10 kV avec un comportement sous-seuil stable indépendamment de la température
Commercial Impact of Silicon Carbide
Commercial Impact of Silicon Carbide