Nai-post sa Hunyo 10, 2019Hunyo 10, 20191200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability Sept, 2011 1200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications Nobyembre, 2011 1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019Exploiting the high temperature promise of SiC Feb, 2012 Exploiting the high temperature promise of SiC
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019Silicon Carbide “Super” Junction Transistors Operating at 500°C Apr, 2012 Silicon Carbide “Super” Junction Transistors Operating at 500°C
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures Mayo, 2012 Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability Mayo, 2012 SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs Okt, 2012 Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs
Nai-post sa Hunyo 10, 2019Hunyo 10, 201910 kV SiC BJTs – static, switching and reliability characteristics Mayo, 2013 10 kV SiC BJTs – static, switching and reliability characteristics
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation Okt, 2013 Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation Apr, 2014 Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation