Nai-post sa Hunyo 10, 2019Hunyo 10, 2019Exploiting the high temperature promise of SiC Feb, 2012 Exploiting the high temperature promise of SiC
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019Silicon Carbide “Super” Junction Transistors Operating at 500°C Apr, 2012 Silicon Carbide “Super” Junction Transistors Operating at 500°C
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures Mayo, 2012 Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability Mayo, 2012 SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs Okt, 2012 Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs
Nai-post sa Hunyo 10, 2019Hunyo 10, 201910 kV SiC BJTs – static, switching and reliability characteristics Mayo, 2013 10 kV SiC BJTs – static, switching and reliability characteristics
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation Okt, 2013 Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation Apr, 2014 Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers Jun, 2014 Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers
Nai-post sa Hunyo 10, 2019Hunyo 10, 2019AN-10A Driving SiC Junction Transistors (SJT) with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept Mayo 2013 AN-10A Driving SiC Junction Transistors (SJT) with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept