杜勒斯, VA, 九月 28, 2010 – Advanced Research Projects Agency – Energy (ARPA-E) has entered into a Cooperative Agreement with the GeneSiC Semiconductor-led team towards the development of the novel ultra high-voltage silicon carbide (碳化硅) Thyristor based devices. These devices are expected to be key enablers for integrating large-scale wind and solar power plants into the next-generation Smart Grid.
“This highly competitive award to GeneSiC will allow us to extend our technical leadership position in the multi-kV Silicon Carbide technology, as well as our commitment to grid-scale alternative energy solutions with solid state solutions,” commented Dr. 兰比尔·辛格, President of GeneSiC. “Multi-kV SiC Thyristors we’re developing are the key enabling technology towards the realization of Flexible AC Transmission Systems (FACTS) elements and High Voltage DC (HVDC) architectures envisaged towards an integrated, efficient, Smart Grid of the future. GeneSiC’s SiC-based Thyristors offer 10X higher voltage, 100X faster switching frequencies and higher temperature operation in FACTS and HVDC power processing solutions as compared to conventional Silicon-based Thyristors.”
In April 2010, GeneSiC responded to the Agile Delivery of Electrical Power Technology (ADEPT) solicitation from ARPA-E that sought to invest in materials for fundamental advances in high voltage switches that has the potential to leapfrog existing power converter performance while offering reductions in cost. The company’s proposal titled “Silicon Carbide Anode Switched Thyristor for medium voltage power conversion” was selected to provide a lightweight, solid-state, medium voltage energy conversion for high power applications such as solid-state electrical substations and wind turbine generators. Deploying these advanced power semiconductor technologies could provide as much as a 25-30 percent reduction in electricity consumption through increased efficiencies in delivery of electrical power. Innovations selected were to support and promote U.S. businesses through technological leadership, through a highly competitive process.
Silicon carbide is a next-generation semiconductor material with vastly superior properties to conventional silicon, such as the ability to handle ten times the voltage—and one-hundred times the current—at temperatures as high as 300ºC. These characteristics make it ideally suited to high-power applications such as hybrid and electric vehicles, renewable energy (wind and solar) installations, and electrical-grid control systems.
It is now well established that ultra-high voltage (>10千伏) 碳化硅 (碳化硅) device technology will play a revolutionary role in the next-generation utility grid. Thyristor-based SiC devices offer the highest on-state performance for >5 kV devices, and are widely applicable towards medium voltage power conversion circuits like Fault-Current Limiters, AC-DC converters, Static VAR Compensators and Series Compensators. SiC based Thyristors also offer the best chance of early adoption due to their similarities to conventional power grid elements. Other promising applications and advantages for these devices include:
- Power-management and power-conditioning systems for Medium Voltage DC conversion sought under Future Naval Capability (FNC) of US Navy, Electro-magnetic launch systems, high energy weapon systems and medical imaging. The 10-100X higher operating frequency capability allows unprecedented improvements in size, weight, volume and ultimately, cost of such systems.
- A variety of energy storage, high-temperature and high-energy physics applications. Energy storage and power grid applications are receiving increasing attention as the world focuses on more efficient and cost-effective energy-management solutions.
GeneSiC 是 SiC 功率器件领域快速崛起的创新者,并坚定地致力于碳化硅的发展 (碳化硅) 基于设备: (一种) 用于电网的 HV-HF SiC 器件, 脉冲功率和定向能武器; 和 (乙) 用于飞机执行器和石油勘探的高温 SiC 功率器件.
“We’ve emerged as a leader in ultra-high voltage SiC technology by leveraging our core competency in device and process design with an extensive suite of fabrication, characterization, and test facilities,” concludes Dr. Singh. “GeneSiC’s position has now been effectively validated by the US DOE with this significant follow-on award.”
关于 GeneSiC 半导体
Strategically located near Washington, DC in Dulles, Virginia, GeneSiC半导体公司. 是高温领域的领先创新者, high-power and ultra high-voltage silicon carbide (碳化硅) 设备. Current development projects include high-temperature rectifiers, SuperJunction Transistors (SJT) and a wide variety of Thyristor based devices. GeneSiC 已经或已经与美国主要政府机构签订了主要/分包合同, 包括能源部, 海军, 军队, DARPA, 和国土安全部. 公司目前正在经历大幅增长, 聘请合格的功率器件和检测器设计人员, 制造, 和测试. 了解更多, 请拜访 www.genesicsemi.com.