1200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability
200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications
Exploiting the high temperature promise of SiC
碳化矽 “Super” Junction Transistors Operating at 500°C
Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures
超快 SiC“超級”結晶體管 (< 15 奈秒) 開關能力
超快 SiC“超級”結晶體管 (< 15 奈秒) 開關能力