Exploiting the high temperature promise of SiC
碳化矽 “Super” Junction Transistors Operating at 500°C
Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures
超快 SiC“超級”結晶體管 (< 15 奈秒) 開關能力
超快 SiC“超級”結晶體管 (< 15 奈秒) 開關能力