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DULLES, Va., Feb. 25, 2013 /PRNewswire-iReach/ — GeneSiC Semiconductor, en pionjär och global leverantör av ett brett sortiment av kiselkarbid (Sic) power semiconductors today announces the immediate availability of a family of 1700V and 1200 V SiC Junction Transistors. Incorporating high voltage, high frequency and high-temperature capable SiC Junction Transistors will increase conversion efficiency and reduce the size/weight/volume of power electronics. These devices are targeted for use in a wide variety of applications including server, telecom and networking power supplies, uninterruptable power supplies, solväxelriktare, industrial motor control systems, and downhole applications.

Junction Transistors offered by GeneSiC exhibit ultra-fast switching capability, a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by commercial, commonly available 15 V IGBT gate drivers, unlike other SiC switches. While offering compatibility with SiC JFET drivers, Junction Transistors can be easily paralleled because of their matching transient characteristics.

“As power system designers continue to push the limits of operating frequency, while still demanding high circuit efficiencies, the need SiC switches which can offer a standard of performance and production uniformity. Utilizing the unique device and fabrication innovations, GeneSiC’s Transistor products help designers achieve all that in a more robust solution,” sa Dr. Ranbir Singh , President för GeneSiC Semiconductor.

1700 V Junction Transistor Technical Highlights

• Tre erbjudanden – 110 mOhms (GA16JT17-247); 250 mOhms (GA08JT17-247); och 500 mOhms (GA04JT17-247)
• Tjmax = 175°C
• Turn On/Off Rise/Fall Times <50 nanoseconds typical.

1200 V Junction Transistor Technical Highlights

• Two offerings – 220 mOhms (GA06JT12-247); och 460 mOhms (GA03JT12-247)
• Tjmax = 175°C
• Turn On/Off Rise/Fall Times <50 nanoseconds typical

Alla enheter är 100% testad till full spänning/ström och inrymd i halogenfri, RoHS compliant TO-247 packages. Enheterna är omedelbart tillgängliga från GeneSiCs auktoriserade distributörer.

Aug 30, 2011 – Dulles, VA – New Physics Lets Thyristors Reach Higher Level

An electric power grid supplies reliable power with the help of electronic devices that ensure smooth, reliable power flow. Until now, silicon-based assemblies have been relied upon, but they have been unable to handle the requirements of the smart grid. Wide-band-gap materials such as silicon carbide (Sic) offer a better alternative as they are capable of higher switching speeds, a higher breakdown voltage, lower switching losses, and a higher junction temperature than traditional silicon-based switches. The first such SiC-based device to reach market is the Ultra-high-voltage Silicon Carbide Thyristor (SiC Thyristor), developed by GeneSiC Semiconductor Inc., Dulles, Va., with support from Sandia National Laboratories, Albuquerque, N.M., the U.S. Department of Energy/Electricity Delivery, and the U.S. Army/Armament Research, Development and Engineering Center, Picatinny Arsenal, N.J.

The developers adopted a different operational physics for this device, which operates on minority carrier transportation and an integrated third terminal rectifier, which is one more than other commercial SiC devices. Developers adopted a new fabrication technique that supports ratings above 6,500 V, as well as a new gate-anode design for high-current devices. Capable of performing at temperatures up to 300 C and current at 80 A, the SiC Thyristor offers up to 10 times higher voltage, four times higher blocking voltages, och 100 times faster switching frequency than silicon-based thyristors.

DULLES, VA, juli 14, 2011 — R&D Magazine har valt GeneSiC Semiconductor Inc. av Dulles, VA som mottagare av det prestigefyllda 2011 R&D 100 Pris för kommersialisering av kiselkarbidenheter med hög spänning.

GeneSiC Semiconductor Inc., en nyckelinnovatör inom de kiselkarbidbaserade kraftenheterna hedrades förra veckan med tillkännagivandet att den har tilldelats den prestigefyllda 2011 R&D 100 Tilldela. Denna utmärkelse erkänner GeneSiC för att introducera en av de mest betydelsefulla, nyligen introducerade forsknings- och utvecklingsframsteg bland flera discipliner under 2010. R&D Magazine erkände GeneSiC:s Ultra-High Voltage SiC-tyristor för dess förmåga att uppnå blockerande spänningar och frekvenser som aldrig tidigare använts för kraftelektronikdemonstrationer. Spänningsvärdena för >6.5kV, på-tillstånd nuvarande betyg på 80 A och driftfrekvenser för >5 kHz är mycket högre än de som tidigare introducerats på marknaden. Dessa förmågor som uppnås av GeneSiCs tyristorer gör det kritiskt möjligt för kraftelektronikforskare att utveckla nätbundna växelriktare, Flexibel

AC transmissionssystem (FAKTA) och högspänningssystem (HVDC). Detta kommer att möjliggöra nya uppfinningar och produktutvecklingar inom förnybar energi, solväxelriktare, vindkraftsväxelriktare, och energilagringsindustrier. Dr. Ranbir Singh, President för GeneSiC Semiconductor kommenterade "Det förväntas att storskaliga marknader för solid-state elektriska transformatorstationer och vindkraftsgeneratorer kommer att öppna upp efter att forskare inom energiomvandlingsarenan kommer att fullt ut inse fördelarna med SiC-tyristorer. Dessa första generationens SiC-tyristorer använder det lägsta påvisade spänningsfallet i tillstånd och differentiella på-motstånd som någonsin uppnåtts i SiC-tyristorer. Vi avser att släppa framtida generationer av SiC-tyristorer optimerade för gate-kontrollerad avstängningsförmåga och pulserande kraftförmåga och >10kV-värden. När vi fortsätter att utveckla förpackningslösningar för hög temperatur och ultrahög spänning, nuvarande 6,5 kV tyristorer är förpackade i moduler med helt lödda kontakter, begränsad till 150oC korsningstemperaturer." Sedan denna produkt lanserades i oktober 2010, GeneSiC har bokat beställningar från flera kunder för demonstration av avancerad kraftelektronikhårdvara med dessa kiselkarbidtyristorer. GeneSiC fortsätter att utveckla sin familj av Silicon Carbide Thyristor-produkter. R&D på tidig version för kraftomvandlingsapplikationer utvecklades genom SBIR-finansieringsstöd från US Dept. av energi. Mer avancerad, Pulsed Power-optimerade SiC-tyristorer utvecklas under ett annat SBIR-kontrakt med ARDEC, Amerikanska armén. Med hjälp av denna tekniska utveckling, intern investering från GeneSiC och kommersiella beställningar från flera kunder, GeneSiC kunde erbjuda dessa UHV-tyristorer som kommersiella produkter.

Den 49:e årliga tekniktävlingen som drivs av R&D Magazine utvärderade bidrag från olika företag och branschaktörer, forskningsorganisationer och universitet runt om i världen. Tidningens redaktörer och en panel av externa experter fungerade som domare, utvärdera varje bidrag med avseende på dess betydelse för vetenskapens och forskningsvärlden.

Enligt R&D Magazine, vinna ett R&D 100 Utmärkelsen ger ett märke av excellens som är känt för industrin, regering, och akademin som bevis på att produkten är en av årets mest innovativa idéer. Denna utmärkelse erkänner GeneSiC som en global ledare inom skapandet av teknikbaserade produkter som gör skillnad i hur vi arbetar och lever.

Om GeneSiC Semiconductor, Inc.

GeneSiC är en snabbt växande innovatör inom området SiC kraftenheter och har ett starkt engagemang för utvecklingen av kiselkarbid (Sic) baserade enheter för: (a) HV-HF SiC-enheter för Power Grid, Pulserande kraft och riktade energivapen; och (b) Högtemperatur SiC-kraftenheter för flygplansmanöverdon och oljeprospektering. GeneSiC Semiconductor Inc.. utvecklar Silicon Carbide (Sic) baserade halvledarenheter för hög temperatur, strålning, och kraftnätsapplikationer. Detta inkluderar utveckling av likriktare, FET, bipolära enheter såväl som partiklar & fotoniska detektorer. GeneSiC har tillgång till en omfattande svit av halvledardesign, tillverkning, karakteriserings- och testmöjligheter för sådana anordningar. GeneSiC utnyttjar sin kärnkompetens inom enhets- och processdesign för att utveckla bästa möjliga SiC-enheter för sina kunder. Företaget utmärker sig genom att tillhandahålla högkvalitativa produkter som är specifikt anpassade till varje kunds krav. GeneSiC har huvud-/underkontrakt från stora amerikanska myndigheter, inklusive ARPA-E, USA:s energidepartement, Marin, DARPA, Inst för hemvärnsskydd, Dept of Commerce och andra avdelningar inom USA Dept. av försvaret. GeneSiC fortsätter att snabbt förbättra utrustningen och personalinfrastrukturen på sina Dulles, Virginia anläggning. Företaget anställer aggressivt personal med erfarenhet av tillverkning av sammansatta halvledarenheter, halvledartestning och detektorkonstruktioner. Ytterligare information om företaget och dess produkter kan erhållas genom att ringa GeneSiC på 703-996-8200 eller genom att besöka www.genesicsemi.com.

Feb 28, 2011 – Dulles, VA – GeneSiC Semiconductor is excited to announce its selection for the prestigious Technology Showcase at the ARPA-E Energy Innovation Summit, co-hosted by the Department of Energy’s Advanced Research Projects Agency – Energy (ARPA-E) and the Clean Technology and Sustainable Industries Organization (CTSI). Hundreds of top technologists and cutting-edge clean tech organizations competed to participate in the Showcase, a hallway of America’s most promising prospects for winning the future in energy.

As one of ARPA-E’s selected organizations, GeneSiC Semiconductor will exhibit its Silicon Carbide to nearly 2,000 national leaders gathering to drive long-term American competitiveness in the energy sector, including top researchers, investors, entrepreneurs, corporate executives and government officials. More than 200 groundbreaking technologies from ARPA-E awardees, corporations, National Labs and Department of Energy R&D programs will be featured at the event.

“This Summit brings together organizations that understand the need to collaborate and partner to bring the next generation of energy technologies to market,” said GeneSiC Semiconductor, President, Dr. Ranbir Singh. “It’s a rare and exciting opportunity to have so many key players in the energy community together under one roof and we look forward to sharing our Silicon Carbide Power Devices with other innovators and investors at the Technology Showcase.”

Research and business development teams from 14 Corporate Acceleration Partners committed to technology commercialization will also be present including Dow, Bosch, Applied Materials and Lockheed Martin.

The Summit also features high-profile speakers including U.S. Energy Secretary Steven Chu, ARPA-E Director Arun Majumdar, U.S. Navy Secretary Raymond Mabus, former California Governor Arnold Schwarzenegger and Bank of America Chairman Charles Holliday.

The second annual ARPA-E Energy Innovation Summit will take place February 28 – March 2, 2011 at the Gaylord Convention Center just outside Washington, D.C. To learn more or to register please visit: www.ct-si.org/events/EnergyInnovation.

Om GeneSiC Semiconductor

GeneSiC Semiconductor Inc.. develops widebandgap semiconductor devices for high temperature, strålning, och kraftnätsapplikationer. Detta inkluderar utveckling av likriktare, power switches and bipolar devices. GeneSiC uses a unique and extensive suite of semiconductor design, tillverkning, karakteriserings- och testmöjligheter för sådana anordningar. GeneSiC utnyttjar sin kärnkompetens inom enhets- och processdesign för att utveckla bästa möjliga SiC-enheter för sina kunder. The company distinguishes itself by providing high quality products for a wide range of high volume markets. GeneSiC har huvud-/underkontrakt från stora amerikanska myndigheter, inklusive ARPA-E, USA:s energidepartement, Marin, Armé, NASA, DARPA, Inst för hemvärnsskydd, Dept of Commerce och andra avdelningar inom USA Dept. av försvaret.

About ARPA-E

The Advanced Research Projects Agency – Energy (ARPA-E) is a new agency within the U.S. Department of Energy – and the first to focus exclusively on breakthrough energy technologies that could radically change the way we use energy. Rather than performing research directly, ARPA-E invests in high-risk, high-reward energy technologies being developed by universities, startups, small businesses, and corporations. Our staff combines industry-leading scientists, engineers, and investment executives to identify promising solutions to the nation’s most critical energy problems and to fast-track top technologies towards the marketplace – which is critical to securing the nation’s global technology leadership and creating new American industries and jobs. Visit www.arpa-e.energy.govfor more information.

About CTSI

The Clean Technology & Sustainable Industries Organization (CTSI), a 501c6 non-profit industry association, represents the organizations developing, commercializing, and implementing energy, water, and environmental technologies. Clean technologies offer much needed solutions to growing resource security and sustainability concerns and are critical to maintaining economic competitiveness. CTSI brings together global leaders for advocacy, community development, networking, and information sharing to help bring these needed technologies to market more rapidly. Visit www.ct-si.org for more information.

Dec 14, 2010 – GeneSiC Semiconductor Inc., a key innovator of novel Silicon Carbide (Sic) devices for high temperature, high power, and ultra-high voltage applications, announces selection of its project titled “Integrated SiC Super Junction Transistor-Diode Devices for high-power motor control modules operating at 500 oC” by the US National Aeronautics and Space Administration (NASA) for a Phase I SBIR award. This SBIR project is focused on the development of Monolithic Integrated SiC JBS diode-Super Junction Transistor (MIDSJT) devices for operation under Venus-like ambients (500 °C surface temperatures). The SiC MIDSJT devices developed in this program will be used to construct motor control power modules for direct integration with Venus exploration rovers.

“We are pleased with the confidence expressed by NASA in our high temperature SiC device solutions. This project will enable GeneSiC to develop industry-leading SiC-based power management technologies through its innovative device and packaging solutions” sa Dr. Siddarth Sundaresan, GeneSiC’s Director of Technology. “The SiC MIDSJT devices targeted in this program will allow Kilowatt-level power to be handled with digital precision at temperatures as high as 500 °C. In addition to outer space applications, this novel technology has the potential to revolutionize critical aerospace and geothermal oil drilling hardware requiring ambient temperatures in excess of 200 °C. These application areas are currently limited by the poor high-temperature performance of contemporary Silicon and even SiC based device technologies such as JFETs and MOSFETs” he added.

GeneSiC fortsätter att snabbt förbättra utrustningen och personalinfrastrukturen på sina Dulles, Virginia anläggning. Företaget anställer aggressivt personal med erfarenhet av tillverkning av sammansatta halvledarenheter, halvledartestning och detektorkonstruktioner. Ytterligare information om företaget och dess produkter kan erhållas genom att ringa GeneSiC på 703-996-8200 eller genom att besöka www.genesicsemi.com.

Om GeneSiC Semiconductor, Inc.

GeneSiC Semiconductor Inc.. utvecklar Silicon Carbide (Sic) baserade halvledarenheter för hög temperatur, strålning, och kraftnätsapplikationer. Detta inkluderar utveckling av likriktare, FET, bipolära enheter såväl som partiklar & fotoniska detektorer. GeneSiC har tillgång till en omfattande svit av halvledardesign, tillverkning, karakteriserings- och testmöjligheter för sådana anordningar. GeneSiC utnyttjar sin kärnkompetens inom enhets- och processdesign för att utveckla bästa möjliga SiC-enheter för sina kunder. Företaget utmärker sig genom att tillhandahålla högkvalitativa produkter som är specifikt anpassade till varje kunds krav. GeneSiC har huvud-/underkontrakt från stora amerikanska myndigheter, inklusive ARPA-E, USA:s energidepartement, Marin, DARPA, Inst för hemvärnsskydd, Dept of Commerce och andra avdelningar inom USA Dept. av försvaret.

DULLES, VA, nov. 1, 2010 –In a first of its kind offering, GeneSiC Semiconductor announces the availability of a family of 6.5kV SCR-mode Silicon Carbide Thyristors for use in power electronics for Smart Grid applications. Revolutionary performance advantages of these power devices are expected to spur key innovations in utility-scale power electronics hardware to increase the accessibility and exploitation of Distributed Energy Resources (DER). “Until now, multi-kV Silicon Carbide (Sic) power devices were not openly available to US researchers to fully exploit the well-known advantages– namely 2-10kHz operating frequencies at 5-15kV ratings – of SiC-based power devices.” commented Dr. Ranbir Singh, President of GeneSiC. “GeneSiC has recently completed delivery of many 6.5kV/40A, 6.5kV/60A and 6.5kV/80A Thyristors to multiple customers conducting research in renewable energy, Army and Naval power system applications. SiC devices with these ratings are now being offered more widely.”

Silicon Carbide based Thyristors offer 10X higher voltage, 100X faster switching frequencies and higher temperature operation as compared to conventional Silicon-based Thyristors. Targeted applications research opportunities for these devices include general purpose medium voltage power conversion (MVDC), Grid-tied solar inverters, vindkraftsväxelriktare, pulsed power, weapon systems, ignition control, and trigger control. It is now well established that ultra-high voltage (>10kV) Silicon Carbide (Sic) device technology will play a revolutionary role in the next-generation utility grid. Thyristor-based SiC devices offer the highest on-state performance for >5 kV devices, and are widely applicable towards medium voltage power conversion circuits like Fault-Current Limiters, AC-DC converters, Static VAR compensators and Series Compensators. SiC based Thyristors also offer the best chance of early adoption due to their similarities to conventional power grid elements. Deploying these advanced power semiconductor technologies could provide as much as a 25-30 percent reduction in electricity consumption through increased efficiencies in delivery of electrical power.

Dr. Singh continues “It is anticipated that large-scale markets in solid-state electrical substations and wind turbine generators will open up after researchers in the power conversion arena will fully realize the benefits of SiC Thyristors. Dessa första generationens SiC-tyristorer använder det lägsta påvisade spänningsfallet i tillstånd och differentiella på-motstånd som någonsin uppnåtts i SiC-tyristorer. We intend to release future generations of SiC Thyristors optimized for Gate-controlled Turn Off capability and >10kV-värden. När vi fortsätter att utveckla förpackningslösningar för hög temperatur och ultrahög spänning, nuvarande 6,5 kV tyristorer är förpackade i moduler med helt lödda kontakter, limited to 150oC junction temperatures.” GeneSiC is a fast emerging innovator in the area of SiC power devices and has a strong commitment to the development of Silicon Carbide (Sic) baserade enheter för: (a) HV-HF SiC-enheter för Power Grid, Pulserande kraft och riktade energivapen; och (b) Högtemperatur SiC-kraftenheter för flygplansmanöverdon och oljeprospektering.

Located near Washington, DC in Dulles, Virginia, GeneSiC Semiconductor Inc.. är en ledande innovatör inom högtemperatur, high-power and ultra high-voltage silicon carbide (Sic) enheter. Current development projects include high-temperature rectifiers, SuperJunction Transistors (SJT) and a wide variety of Thyristor based devices. GeneSiC has or has had prime/sub-contracts from major US Government agencies, including the Department of Energy, Marin, Armé, DARPA, och Department of Homeland Security. The company is currently experiencing substantial growth, and hiring qualified personnel in power-device and detector design, tillverkning, and testing. To find out more, besök www.genesicsemi.com.

DULLES, VA, September 28, 2010 – Advanced Research Projects Agency – Energy (ARPA-E) has entered into a Cooperative Agreement with the GeneSiC Semiconductor-led team towards the development of the novel ultra high-voltage silicon carbide (Sic) Thyristor based devices. These devices are expected to be key enablers for integrating large-scale wind and solar power plants into the next-generation Smart Grid.

“This highly competitive award to GeneSiC will allow us to extend our technical leadership position in the multi-kV Silicon Carbide technology, as well as our commitment to grid-scale alternative energy solutions with solid state solutions,” commented Dr. Ranbir Singh, President of GeneSiC. “Multi-kV SiC Thyristors we’re developing are the key enabling technology towards the realization of Flexible AC Transmission Systems (FAKTA) elements and High Voltage DC (HVDC) architectures envisaged towards an integrated, efficient, Smart Grid of the future. GeneSiC’s SiC-based Thyristors offer 10X higher voltage, 100X faster switching frequencies and higher temperature operation in FACTS and HVDC power processing solutions as compared to conventional Silicon-based Thyristors.”

In April 2010, GeneSiC responded to the Agile Delivery of Electrical Power Technology (ADEPT) solicitation from ARPA-E that sought to invest in materials for fundamental advances in high voltage switches that has the potential to leapfrog existing power converter performance while offering reductions in cost. The company’s proposal titled “Silicon Carbide Anode Switched Thyristor for medium voltage power conversion” was selected to provide a lightweight, solid-state, medium voltage energy conversion for high power applications such as solid-state electrical substations and wind turbine generators. Deploying these advanced power semiconductor technologies could provide as much as a 25-30 percent reduction in electricity consumption through increased efficiencies in delivery of electrical power. Innovations selected were to support and promote U.S. businesses through technological leadership, through a highly competitive process.

Silicon carbide is a next-generation semiconductor material with vastly superior properties to conventional silicon, such as the ability to handle ten times the voltage—and one-hundred times the current—at temperatures as high as 300ºC. These characteristics make it ideally suited to high-power applications such as hybrid and electric vehicles, renewable energy (wind and solar) installations, and electrical-grid control systems.

It is now well established that ultra-high voltage (>10kV) Silicon Carbide (Sic) device technology will play a revolutionary role in the next-generation utility grid. Thyristor-based SiC devices offer the highest on-state performance for >5 kV devices, and are widely applicable towards medium voltage power conversion circuits like Fault-Current Limiters, AC-DC converters, Static VAR Compensators and Series Compensators. SiC based Thyristors also offer the best chance of early adoption due to their similarities to conventional power grid elements. Other promising applications and advantages for these devices include:

• Power-management and power-conditioning systems for Medium Voltage DC conversion sought under Future Naval Capability (FNC) of US Navy, Electro-magnetic launch systems, high energy weapon systems and medical imaging. The 10-100X higher operating frequency capability allows unprecedented improvements in size, weight, volume and ultimately, cost of such systems.
• A variety of energy storage, high-temperature and high-energy physics applications. Energy storage and power grid applications are receiving increasing attention as the world focuses on more efficient and cost-effective energy-management solutions.

GeneSiC är en snabbt växande innovatör inom området SiC kraftenheter och har ett starkt engagemang för utvecklingen av kiselkarbid (Sic) baserade enheter för: (a) HV-HF SiC-enheter för Power Grid, Pulserande kraft och riktade energivapen; och (b) Högtemperatur SiC-kraftenheter för flygplansmanöverdon och oljeprospektering.

“We’ve emerged as a leader in ultra-high voltage SiC technology by leveraging our core competency in device and process design with an extensive suite of fabrication, characterization, and test facilities,” concludes Dr. Singh. “GeneSiC’s position has now been effectively validated by the US DOE with this significant follow-on award.”

Om GeneSiC Semiconductor

Strategically located near Washington, DC in Dulles, Virginia, GeneSiC Semiconductor Inc.. är en ledande innovatör inom högtemperatur, high-power and ultra high-voltage silicon carbide (Sic) enheter. Current development projects include high-temperature rectifiers, SuperJunction Transistors (SJT) and a wide variety of Thyristor based devices. GeneSiC has or has had prime/sub-contracts from major US Government agencies, including the Department of Energy, Marin, Armé, DARPA, och Department of Homeland Security. The company is currently experiencing substantial growth, and hiring qualified personnel in power-device and detector design, tillverkning, and testing. To find out more, besök www.genesicsemi.com.

Wednesday, November 12th 2008 – The US Department of Energy has awarded GeneSiC Semiconductor two separate grants totaling $1.5M for the development of high-voltage silicon carbide (Sic) devices that will serve as key enablers for wind- and solar-power integration with the nation’s electricity grid.

“These awards demonstrate the DOE’s confidence in GeneSiC’s capabilities, as well as its commitment to alternative energy solutions,” notes Dr. Ranbir Singh, president of GeneSiC. “An integrated, efficient power grid is critical to the nation’s energy future — and the SiC devices we’re developing are critical for overcoming the inefficiencies of conventional silicon technologies.”

The first award is a $750k Phase II SBIR grant for the development of fast, ultra-high-voltage SiC bipolar devices. The second is a $750k Phase II STTR grant for the development of optically gated high-power SiC switches.

Silicon carbide is a next-generation semiconductor material with the ability to handle 10x the voltage and 100x the current of silicon, making it ideally suited to high-power applications such as renewable energy (wind and solar) installations and electrical-grid control systems.

Specifically, the two awards are for:

• Development of high-frequency, multi-kilovolt SiC gate-turn-off (GTO) power devices. Government and commercial applications include power-management and conditioning systems for ships, the utility industry, and medical imaging.
• Design and fabrication of optically gated high-voltage, high-power SiC switching devices. Using fiber-optics to switch power is an ideal solution for environments plagued by electro-magnetic interference (EMI), and applications that require ultra high-voltages.

The SiC devices GeneSiC is developing serve a variety of energy storage, power grid, and military applications, which are receiving increasing attention as the world focuses on more efficient and cost-effective energy-management solutions.

Based outside Washington, DC in Dulles, Virginia, GeneSiC Semiconductor Inc.. är en ledande innovatör inom högtemperatur, high-power and ultra high-voltage silicon carbide (Sic) enheter. Current development projects include high-temperature rectifiers, field-effect transistors (FET) and bipolar devices, as well as particle & fotoniska detektorer. GeneSiC has prime/sub-contracts from major US Government agencies, including the Department of Energy, Marin, DARPA, och Department of Homeland Security. The company is currently experiencing substantial growth, and hiring qualified personnel in power-device and detector design, tillverkning, and testing. To find out more, besök www.genesicsemi.com.

DULLES, VA, Oct. 23, 2007 — GeneSiC Semiconductor Inc., a fast-rising innovator of high-temperature, high-power and ultra high-voltage silicon carbide (Sic) enheter, announced that is has been awarded three separate small business grants from the US Department of Energy during FY07. The SBIR and STTR grants will be used by GeneSiC to demonstrate novel high-voltage SiC devices for a variety of energy storage, power grid, high-temperature and high-energy physics applications. Energy storage and power grid applications are receiving increasing attention as the world focuses on more efficient and cost-effective energy management solutions.

“We are pleased with the level of confidence expressed by various offices within the US Department on Energy with regard to our high-power device solutions. Injecting this funding into our advanced SiC technology programs will result in an industry-leading line SiC devices,” commented GeneSiC’s President, Dr. Ranbir Singh. “The devices being developed in these projects promise to provide critical enabling technology to support a more-efficient power grid, and will open the door to new commercial and military hardware technology that has remained unrealized due to the limitations of contemporary silicon-based technologies.”

The three projects include:

• A new Phase I SBIR award focused on high current, multi-kV Thyristor-based devices geared towards energy storage applications.
• A Phase II SBIR follow-on award for development of multi-kV SiC power devices for high voltage power supplies for high power RF system applications awarded by the DOE Office of Science.
• A Phase I STTR award focused on optically gated high-voltage, high-frequency SiC power devices for environments rich in electro-magnetic interference, including high power RF energy systems, and directed energy weapon systems.

Along with the awards, GeneSiC has recently relocated operations to an expanded laboratory and office building in Dulles, Virginia, significantly upgrading its equipment, infrastructure and is in the process of adding additional key personnel.

“GeneSiC utnyttjar sin kärnkompetens inom enhets- och processdesign för att utveckla bästa möjliga SiC-enheter för sina kunder, backing that up with access to an extensive suite of fabrication, characterization and testing facilities,” concluded Dr. Singh. “We feel those capabilities have been effectively validated by the US DOE with these new and follow-on awards.”

Ytterligare information om företaget och dess produkter kan erhållas genom att ringa GeneSiC på 703-996-8200 eller genom att besöka www.genesicsemi.com.