Kategoria: Aktualności

ĆWICZENIA, VA, Wrzesień 28, 2010 – Advanced Research Projects Agency – Energy (ARPA-E) has entered into a Cooperative Agreement with the GeneSiC Semiconductor-led team towards the development of the novel ultra high-voltage silicon carbide (SiC) Thyristor based devices. These devices are expected to be key enablers for integrating large-scale wind and solar power plants into the next-generation Smart Grid.

“This highly competitive award to GeneSiC will allow us to extend our technical leadership position in the multi-kV Silicon Carbide technology, as well as our commitment to grid-scale alternative energy solutions with solid state solutions,” commented Dr. Ranbir Singh, Prezes GeneSiC. “Multi-kV SiC Thyristors we’re developing are the key enabling technology towards the realization of Flexible AC Transmission Systems (FACTS) elements and High Voltage DC (HVDC) architectures envisaged towards an integrated, efficient, Smart Grid of the future. GeneSiC’s SiC-based Thyristors offer 10X higher voltage, 100X faster switching frequencies and higher temperature operation in FACTS and HVDC power processing solutions as compared to conventional Silicon-based Thyristors.”

In April 2010, GeneSiC responded to the Agile Delivery of Electrical Power Technology (ADEPT) solicitation from ARPA-E that sought to invest in materials for fundamental advances in high voltage switches that has the potential to leapfrog existing power converter performance while offering reductions in cost. The company’s proposal titled “Silicon Carbide Anode Switched Thyristor for medium voltage power conversion” was selected to provide a lightweight, solid-state, medium voltage energy conversion for high power applications such as solid-state electrical substations and wind turbine generators. Wdrożenie tych zaawansowanych technologii półprzewodników mocy może zapewnić aż: 25-30 procentowe zmniejszenie zużycia energii elektrycznej poprzez zwiększenie efektywności dostarczania energii elektrycznej. Innovations selected were to support and promote U.S. businesses through technological leadership, through a highly competitive process.

Silicon carbide is a next-generation semiconductor material with vastly superior properties to conventional silicon, such as the ability to handle ten times the voltage—and one-hundred times the current—at temperatures as high as 300ºC. These characteristics make it ideally suited to high-power applications such as hybrid and electric vehicles, renewable energy (wind and solar) installations, and electrical-grid control systems.

Obecnie powszechnie wiadomo, że bardzo wysokie napięcie (>10kV) Węglik krzemu (SiC) technologia urządzeń odegra rewolucyjną rolę w sieci energetycznej nowej generacji. Urządzenia SiC oparte na tyrystorach oferują najwyższą wydajność w stanie włączenia >5 urządzenia kV, i mają szerokie zastosowanie w obwodach konwersji mocy średniego napięcia, takich jak ograniczniki prądu zwarciowego, Przetwornice AC-DC, Static VAR Compensators and Series Compensators. Tyrystory oparte na SiC oferują również największe szanse na wczesne przyjęcie ze względu na ich podobieństwo do konwencjonalnych elementów sieci energetycznej. Other promising applications and advantages for these devices include:

• Power-management and power-conditioning systems for Medium Voltage DC conversion sought under Future Naval Capability (FNC) of US Navy, Electro-magnetic launch systems, high energy weapon systems and medical imaging. The 10-100X higher operating frequency capability allows unprecedented improvements in size, weight, volume and ultimately, cost of such systems.
• A variety of energy storage, high-temperature and high-energy physics applications. Energy storage and power grid applications are receiving increasing attention as the world focuses on more efficient and cost-effective energy-management solutions.

GeneSiC jest szybko wschodzącym innowatorem w dziedzinie urządzeń zasilających SiC i jest silnie zaangażowany w rozwój węglika krzemu (SiC) oparte na urządzeniach do: (a) Urządzenia HV-HF SiC dla sieci energetycznej, Broń o mocy impulsowej i ukierunkowanej energii; i (b) Wysokotemperaturowe urządzenia zasilające SiC do siłowników lotniczych i poszukiwania ropy naftowej.

“We’ve emerged as a leader in ultra-high voltage SiC technology by leveraging our core competency in device and process design with an extensive suite of fabrication, characterization, and test facilities,” concludes Dr. Singh. “GeneSiC’s position has now been effectively validated by the US DOE with this significant follow-on award.”

Informacje o półprzewodnikach GeneSiC

Strategically located near Washington, DC w Dulles, Wirginia, GeneSiC Semiconductor Inc. jest wiodącym innowatorem w dziedzinie wysokich temperatur, węglik krzemu o dużej mocy i ultra wysokim napięciu (SiC) urządzenia. Aktualne projekty rozwojowe obejmują prostowniki wysokotemperaturowe, Tranzystory superzłączowe (SJT) oraz szeroką gamę urządzeń opartych na tyrystorach. GeneSiC ma lub miał umowy główne/podwykonawstwo z głównymi agencjami rządowymi USA, w tym Departament Energii, Marynarka wojenna, Armia, DARPA, oraz Departament Bezpieczeństwa Wewnętrznego. Obecnie firma przeżywa znaczny rozwój, oraz zatrudnienie wykwalifikowanego personelu w zakresie projektowania urządzeń zasilających i detektorów, produkcja, i testowanie. By dowiedzieć się więcej, Proszę odwiedź www.genesicsemi.com.

Wednesday, November 12th 2008 – The US Department of Energy has awarded GeneSiC Semiconductor two separate grants totaling $1.5M for the development of high-voltage silicon carbide (SiC) devices that will serve as key enablers for wind- and solar-power integration with the nation’s electricity grid.

“These awards demonstrate the DOE’s confidence in GeneSiC’s capabilities, as well as its commitment to alternative energy solutions,” notes Dr. Ranbir Singh, president of GeneSiC. “An integrated, efficient power grid is critical to the nation’s energy future — and the SiC devices we’re developing are critical for overcoming the inefficiencies of conventional silicon technologies.”

The first award is a $750k Phase II SBIR grant for the development of fast, ultra-high-voltage SiC bipolar devices. The second is a $750k Phase II STTR grant for the development of optically gated high-power SiC switches.

Silicon carbide is a next-generation semiconductor material with the ability to handle 10x the voltage and 100x the current of silicon, making it ideally suited to high-power applications such as renewable energy (wind and solar) installations and electrical-grid control systems.

Specifically, the two awards are for:

• Development of high-frequency, multi-kilovolt SiC gate-turn-off (GTO) power devices. Government and commercial applications include power-management and conditioning systems for ships, the utility industry, and medical imaging.
• Design and fabrication of optically gated high-voltage, high-power SiC switching devices. Using fiber-optics to switch power is an ideal solution for environments plagued by electro-magnetic interference (EMI), and applications that require ultra high-voltages.

The SiC devices GeneSiC is developing serve a variety of energy storage, power grid, and military applications, which are receiving increasing attention as the world focuses on more efficient and cost-effective energy-management solutions.

Based outside Washington, DC w Dulles, Wirginia, GeneSiC Semiconductor Inc. jest wiodącym innowatorem w dziedzinie wysokich temperatur, węglik krzemu o dużej mocy i ultra wysokim napięciu (SiC) urządzenia. Aktualne projekty rozwojowe obejmują prostowniki wysokotemperaturowe, field-effect transistors (FET) and bipolar devices, as well as particle & detektory fotoniczne. GeneSiC has prime/sub-contracts from major US Government agencies, w tym Departament Energii, Marynarka wojenna, DARPA, oraz Departament Bezpieczeństwa Wewnętrznego. Obecnie firma przeżywa znaczny rozwój, oraz zatrudnienie wykwalifikowanego personelu w zakresie projektowania urządzeń zasilających i detektorów, produkcja, i testowanie. By dowiedzieć się więcej, Proszę odwiedź www.genesicsemi.com.

ĆWICZENIA, VA, Oct. 23, 2007 — GeneSiC Semiconductor Inc., a fast-rising innovator of high-temperature, węglik krzemu o dużej mocy i ultra wysokim napięciu (SiC) urządzenia, announced that is has been awarded three separate small business grants from the US Department of Energy during FY07. The SBIR and STTR grants will be used by GeneSiC to demonstrate novel high-voltage SiC devices for a variety of energy storage, power grid, high-temperature and high-energy physics applications. Energy storage and power grid applications are receiving increasing attention as the world focuses on more efficient and cost-effective energy management solutions.

“We are pleased with the level of confidence expressed by various offices within the US Department on Energy with regard to our high-power device solutions. Injecting this funding into our advanced SiC technology programs will result in an industry-leading line SiC devices,” commented GeneSiC’s President, dr. Ranbir Singh. “The devices being developed in these projects promise to provide critical enabling technology to support a more-efficient power grid, and will open the door to new commercial and military hardware technology that has remained unrealized due to the limitations of contemporary silicon-based technologies.”

The three projects include:

• A new Phase I SBIR award focused on high current, multi-kV Thyristor-based devices geared towards energy storage applications.
• A Phase II SBIR follow-on award for development of multi-kV SiC power devices for high voltage power supplies for high power RF system applications awarded by the DOE Office of Science.
• A Phase I STTR award focused on optically gated high-voltage, high-frequency SiC power devices for environments rich in electro-magnetic interference, including high power RF energy systems, and directed energy weapon systems.

Along with the awards, GeneSiC has recently relocated operations to an expanded laboratory and office building in Dulles, Wirginia, significantly upgrading its equipment, infrastructure and is in the process of adding additional key personnel.

“GeneSiC wykorzystuje swoją podstawową kompetencję w zakresie projektowania urządzeń i procesów, aby opracować najlepsze możliwe urządzenia SiC dla swoich klientów, backing that up with access to an extensive suite of fabrication, characterization and testing facilities,” concluded Dr. Singh. “We feel those capabilities have been effectively validated by the US DOE with these new and follow-on awards.”

Dodatkowe informacje o firmie i jej produktach można uzyskać dzwoniąc do GeneSiC pod numer 703-996-8200 lub odwiedzając www.genesicsemi.com.