Posted on June 10, 2019June 10, 20191200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability Sept, 20111200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability
Posted on June 10, 2019June 10, 20191200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications Nov, 2011 1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications
Posted on June 10, 2019June 10, 2019Exploiting the high temperature promise of SiC Feb, 2012 Exploiting the high temperature promise of SiC
Posted on June 10, 2019June 10, 2019Silicon Carbide “Super” Junction Transistors Operating at 500°C Apr, 2012 Silicon Carbide “Super” Junction Transistors Operating at 500°C
Posted on June 10, 2019June 10, 2019Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures May, 2012 Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures
Posted on June 10, 2019June 10, 2019SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability May, 2012 SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability
Posted on June 10, 2019June 10, 2019Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs Oct, 2012 Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs
Posted on June 10, 2019June 10, 201910 kV SiC BJTs – static, switching and reliability characteristics May, 2013 10 kV SiC BJTs – static, switching and reliability characteristics
Posted on June 10, 2019June 10, 2019Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation Oct, 2013 Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation
Posted on June 10, 2019June 10, 2019Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation Apr, 2014 Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation
