DiodeModule - Energy Efficiency Through Innovation
  • Home
  • Sales Support
    • Sales Network
    • Global Distributors
    • Americas
    • Europe MEA
    • Asia-Pacific
  • Technical Support
  • Contact
    • Leadership

Category: Thyristors Technicals

Posted on June 10, 2019June 10, 2019

1200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability

  • Sept, 2011
    1200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability
  • Posted on June 10, 2019June 10, 2019

    1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications

  • Nov, 2011
    1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications
  • Posted on June 10, 2019June 10, 2019

    Exploiting the high temperature promise of SiC

  • Feb, 2012
    Exploiting the high temperature promise of SiC
  • Posted on June 10, 2019June 10, 2019

    Silicon Carbide “Super” Junction Transistors Operating at 500°C

  • Apr, 2012
    Silicon Carbide “Super” Junction Transistors Operating at 500°C
  • Posted on June 10, 2019June 10, 2019

    Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures

  • May, 2012
    Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures
  • Posted on June 10, 2019June 10, 2019

    SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability

  • May, 2012
    SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability
  • Posted on June 10, 2019June 10, 2019

    Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs

  • Oct, 2012
    Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs
  • Posted on June 10, 2019June 10, 2019

    10 kV SiC BJTs – static, switching and reliability characteristics

  • May, 2013
    10 kV SiC BJTs – static, switching and reliability characteristics
  • Posted on June 10, 2019June 10, 2019

    Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation

  • Oct, 2013
    Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation
  • Posted on June 10, 2019June 10, 2019

    Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation

  • Apr, 2014
    Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation
  • Posts navigation

    Page 1 Page 2 Next page
    Home > Thyristors Technicals

    Silicon Products

    • Bridge Rectifier
    • Rectifier Module
    • Stud Rectifier
    • SIC PRODUCTS
    • SILICON PRODUCTS
    SIC PRODUCTS
    SILICON PRODUCTS
    • icon

      Bridge Rectifier

    • icon

      Rectifier Module

    • icon

      Stud Rectifier

    Home > Thyristors Technicals

    Silicon Products

    • Bridge Rectifier
    • Rectifier Module
    • Stud Rectifier
    Silicon Products
    • Bridge Rectifier

    • Rectifier Module

    • Stud Rectifier

    Sales Support
    • Sales Network

    • Global Distributors

    • Americas

    • Europe MEA

    • Asia-Pacific

    Technical Support
    • Compliance

    • Reliability

    • Quality

    Company
    • Address : GeneSiC Semiconductor Inc.
      43670 Trade Center Place Ste. 155
      Dulles, VA 20166 USA

    • Office : +1 (703) 996-8200

    • Fax : +1 (703) 665-2347

    • Skype : genesicsemi

    • Email to : sales@genesicsemi.com

    DiodeModule
    • Home
    • Sales Support
      • Distributors
      • Americas
      • Asia-Pacific
      • Europe MEA
    • Contact