GeneSiC wins the prestigious R&D100 Award for SiC-Based Monolithic Transistor-Rectifier Switch

DULLES, VA, December 5, 2019 — R&D Magazine has selected GeneSiC Semiconductor Inc. of Dulles, VA as a recipient of the prestigious 2019 R&D 100 Award for development of SiC-Based Monolithic Transistor-Rectifier Switch.

GeneSiC Semiconductor Inc, a key innovator in the Silicon Carbide based power devices was honored with the announcement that it has been awarded the prestigious 2019 R&D 100 Award. This award recognizes GeneSiC for introducing one of the most significant, newly introduced research and development advances among multiple disciplines during 2018. R&D Magazine recognized GeneSiC’s medium voltage SiC power device technology for its ability to monolithically integrate MOSFET and Schottky rectifier on a single chip. These capabilities achieved by GeneSiC’s device critically enable power electronics researchers to develop next-generation power electronic systems like inverters and DC-DC converters. This will allow product developments within electric vehicles, charging infrastructure, renewable energy and energy storage industries. GeneSiC has booked orders from multiple customers towards demonstration of advanced power electronics hardware using these devices and continues to develop its family of Silicon Carbide MOSFET products. The R&D on early version for power conversion applications were developed through US Dept. of Energy and collaboration with Sandia National Laboratories.

The annual technology competition run by R&D Magazine evaluated entries from various companies and industry players, research organizations and universities around the world. The magazine’s editors and a panel of outside experts served as judges, evaluating each entry in terms of its importance to the world of science and research.

According to R&D Magazine, winning an R&D 100 Award provides a mark of excellence known to industry, government, and academia as proof that the product is one of the most innovative ideas of the year. This award recognizes GeneSiC as a global leader in the creation of technology-based products that make a difference in how we work and live.

About GeneSiC Semiconductor, Inc.

GeneSiC is a fast emerging innovator in the area of SiC power devices and has a strong commitment to the development of Silicon Carbide (SiC) based devices for: (a) HV-HF SiC devices for Power Grid, Pulsed power and Directed Energy Weapons; and (b) High temperature SiC power devices for aircraft actuators and oil exploration. GeneSiC Semiconductor Inc. develops Silicon Carbide (SiC) based semiconductor devices for high temperature, radiation, and power grid applications. This includes development of rectifiers, FETs, bipolar devices as well as particle & photonic detectors. GeneSiC has access to an extensive suite of semiconductor design, fabrication, characterization and testing facilities for such devices. GeneSiC capitalizes on its core competency in device and process design to develop the best possible SiC devices for its customers. The company distinguishes itself by providing high quality products that are specifically tuned to each customer’s requirements. GeneSiC has prime/sub-contracts from major US Government agencies including ARPA-E, US Dept of Energy, Navy, DARPA, Dept of Homeland Security, Dept of Commerce and other departments within the US Dept. of Defense. GeneSiC continues to rapidly enhance the equipment and personnel infrastructure at its Dulles, Virginia facility. The company is aggressively hiring personnel experienced in compound semiconductor device fabrication, semiconductor testing and detector designs. Additional information about the company and its products may be obtained by calling GeneSiC at 703-996-8200 or by visiting www.genesicsemi.com.

High-current capable 650V, 1200V and 1700V SiC Schottky MPS™ diodes in mini-module SOT-227 package

DULLES, VA, May 11, 2019 — GeneSiC becomes a market leader in high-current capable (100 A and 200 A) SiC schottky diodes in SOT-227 mini-module

GeneSiC has introduced GB2X50MPS17-227, GC2X50MPS06-227 and GC2X100MPS06-227; the industry’s highest current rated 650V and 1700V SiC schottky diodes, adding to the existing 1200V SiC schottky diode mini-module portfolio – GB2X50MPS12-227 and GB2X100MPS12-227. These SiC diodes replace silicon-based ultra-fast recovery diodes, enabling engineers to build switching circuits with greater efficiency and higher power density. Applications are expected to include electric vehicle fast chargers, motor drives, transportation power supplies, high power rectification and industrial power supplies.

In addition to the isolated base-plate of the SOT-227 mini-module package, these newly released diodes feature low forward voltage drop, zero forward recovery, zero reverse recovery, low junction capacitance and are rated for a maximum operating temperature of 175°C. GeneSiC’s third generation SiC schottky diode technology provides industry leading avalanche ruggedness and surge current (Ifsm) robustness, combined with high quality automotive qualified 6-inch fabrication and advanced high reliability discrete assembly technology.

These SiC diodes are pin-compatible direct replacements to other diodes available in the SOT-227 (mini-module) package. Benefitting from their lower power losses (cooler operation) and high frequency switching capability, designers can now achieve greater conversion efficiency and greater power density in designs.

About GeneSiC Semiconductor, Inc.

GeneSiC is a fast emerging innovator in the area of SiC power devices and has a strong commitment to the development of Silicon Carbide (SiC) based devices for: (a) HV-HF SiC devices for Power Grid, Pulsed power and Directed Energy Weapons; and (b) High temperature SiC power devices for aircraft actuators and oil exploration. GeneSiC Semiconductor Inc. develops Silicon Carbide (SiC) based semiconductor devices for high temperature, radiation, and power grid applications. This includes development of rectifiers, FETs, bipolar devices as well as particle & photonic detectors. GeneSiC has access to an extensive suite of semiconductor design, fabrication, characterization and testing facilities for such devices. GeneSiC capitalizes on its core competency in device and process design to develop the best possible SiC devices for its customers. The company distinguishes itself by providing high quality products that are specifically tuned to each customer’s requirements. GeneSiC has prime/sub-contracts from major US Government agencies including ARPA-E, US Dept of Energy, Navy, DARPA, Dept of Homeland Security, Dept of Commerce and other departments within the US Dept. of Defense. GeneSiC continues to rapidly enhance the equipment and personnel infrastructure at its Dulles, Virginia facility. The company is aggressively hiring personnel experienced in compound semiconductor device fabrication, semiconductor testing and detector designs. Additional information about the company and its products may be obtained by calling GeneSiC at 703-996-8200 or by visiting www.genesicsemi.com.

GeneSiC releases industry’s best performing 1700V SiC Schottky MPS™ diodes

DULLES, VA, January 7, 2019 — GeneSiC releases a comprehensive portfolio of its third generation 1700V SiC Schottky MPS™ diodes in TO-247-2 package

GeneSiC has introduced GB05MPS17-247, GB10MPS17-247, GB25MPS17-247 and GB50MPS17-247; the industry’s best performing 1700V SiC diodes available in the popular TO-247-2 through-hole package. These 1700V SiC diodes replace silicon-based ultra-fast recovery diodes and other old generation 1700V SiC JBS, enabling engineers to build switching circuits with greater efficiency and higher power density. Applications are expected to include electric vehicle fast chargers, motor drives, transportation power supplies and renewable energy.

GB50MPS17-247 is a 1700V 50A SiC merged-PiN-schottky diode, the industry’s highest current rated discrete SiC power diode. These newly released diodes feature low forward voltage drop, zero forward recovery, zero reverse recovery, low junction capacitance and are rated for a maximum operating temperature of 175°C. GeneSiC’s third generation SiC schottky diode technology provides industry leading avalanche ruggedness and surge current (Ifsm) robustness, combined with high quality automotive qualified 6-inch foundry and advanced high reliability discrete assembly technology.

These SiC diodes are pin-compatible direct replacements to other diodes available in the TO-247-2 package. Benefitting from their lower power losses (cooler operation) and high frequency switching capability, designers can now achieve greater conversion efficiency and greater power density in designs.

About GeneSiC Semiconductor, Inc.

GeneSiC is a fast emerging innovator in the area of SiC power devices and has a strong commitment to the development of Silicon Carbide (SiC) based devices for: (a) HV-HF SiC devices for Power Grid, Pulsed power and Directed Energy Weapons; and (b) High temperature SiC power devices for aircraft actuators and oil exploration. GeneSiC Semiconductor Inc. develops Silicon Carbide (SiC) based semiconductor devices for high temperature, radiation, and power grid applications. This includes development of rectifiers, FETs, bipolar devices as well as particle & photonic detectors. GeneSiC has access to an extensive suite of semiconductor design, fabrication, characterization and testing facilities for such devices. GeneSiC capitalizes on its core competency in device and process design to develop the best possible SiC devices for its customers. The company distinguishes itself by providing high quality products that are specifically tuned to each customer’s requirements. GeneSiC has prime/sub-contracts from major US Government agencies including ARPA-E, US Dept of Energy, Navy, DARPA, Dept of Homeland Security, Dept of Commerce and other departments within the US Dept. of Defense. GeneSiC continues to rapidly enhance the equipment and personnel infrastructure at its Dulles, Virginia facility. The company is aggressively hiring personnel experienced in compound semiconductor device fabrication, semiconductor testing and detector designs. Additional information about the company and its products may be obtained by calling GeneSiC at 703-996-8200 or by visiting www.genesicsemi.com.