AN-2 1200 V SiC JBS diodes with ultra-low capacitive reverse recovery charge for fast switching applications
AN1001 SiC Power Diode Reliability
AN1001 SiC Power Diode Reliability
AN1002 Understanding the Datasheet of a SiC Power Schottky Diode
AN1003 SPICE Model Usage Instructions
AN1003 SPICE Model Usage Instructions
Emerging Silicon-Carbide Power Devices Enable Revolutionary Changes in High Voltage Power Conversion
Reliability of SiC MOS devices
Reliability of SiC MOS devices
Novel SiC MOS-Bipolar Switches for >10 kV Applications
Reliability and performance limitations in SiC power device
A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
GeneSiC Interviewed at PCIM 2016 in Nuremberg, Germany
Power System Design Interviews GeneSiC
Nuremberg, Germany May 12, 2016 — GeneSiC Semiconductor’s President was interviewed by Alix Paultre of Power Systems Design (http://www.powersystemsdesign.com/psdcast-ranbir-singh-of-genesic-on-their-latest-silicon-carbide-tech/67) at the PCIM show in Nuremberg, Germany.